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"liao m h"的相關文件
顯示項目 141-165 / 239 (共10頁)
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| 臺大學術典藏 |
2019-03-11T08:01:09Z |
Publisher's note: "Optimization of dislocation edge stress effects for Si N-type metal-oxide-semiconductor field-effect transistors" [Jpn. J. Appl. Phys. 52, 04CC20 (2013)]
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Kao, S.-C.;Liu, G.-H.;Yu, M.-A.;Yang, C.;Chang, L.-C.;Chen, C.-H.;Liao, M.-H.; Liao, M.-H.; Chen, C.-H.; Chang, L.-C.; Yang, C.; Yu, M.-A.; Liu, G.-H.; Kao, S.-C. |
| 臺大學術典藏 |
2019-03-11T08:01:08Z |
The improving Si 0.5 Ge 0.5 /Si interface quality through a low energy hydrogen plasma cleaning process and positron annihilation spectroscopy
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Chen, C.-H.;Chen, C.-W.;Hsieh, C.-F.;Liao, M.-H.; Hsieh, C.-F.; Chen, C.-W.; Chen, C.-H.; Liao, M.-H. |
| 臺大學術典藏 |
2019-03-11T08:01:08Z |
Residual stress of curvature sapphire substrate with GaN film released by the application of trench structures
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Hsieh, C.-F.;Chen, K.-C.;Kao, S.-C.;Chen, C.-H.;Lee, J.-J.;Liao, M.-H.; Liao, M.-H.; Lee, J.-J.; Chen, C.-H.; Kao, S.-C.; Chen, K.-C.; Hsieh, C.-F. |
| 臺大學術典藏 |
2019-03-11T08:01:08Z |
The demonstration of D-SMT stressor on Si and Ge n-FinFETs
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Liu, C.Y.;Lien, C.;Liu, K.H.;Hung, C.X.;Kao, S.C.;Huang, S.C.;Chen, P.G.;Liao, M.-H.; Liao, M.-H.; Chen, P.G.; Huang, S.C.; Kao, S.C.; Hung, C.X.; Liu, K.H.; Lien, C.; Liu, C.Y. |
| 臺大學術典藏 |
2019-03-11T08:01:07Z |
Periodic nanostructured thin-film solar cells
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Wu, T.-C.;Wu, H.-S.;Hsieh, C.-F.;Liao, M.-H.; Hsieh, C.-F.; Wu, H.-S.; Wu, T.-C.; Liao, M.-H. |
| 臺大學術典藏 |
2019-03-11T08:01:07Z |
Solar cell composed of periodic nano-structure and SiGe/Si thin film
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Wu, T.-C.;Wu, H.-S.;Hsieh, C.-F.;Liao, M.H.; Hsieh, C.-F.; Wu, H.-S.; Wu, T.-C.; Liao, M.H. |
| 臺大學術典藏 |
2019-03-11T08:01:07Z |
The chemical vapor deposition chamber design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D chamber modeling and experimental visual technique
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Huang, M.-C.;Kao, S.-C.;Chen, C.-H.;Liao, M.-H.; Liao, M.-H.; Chen, C.-H.; Kao, S.-C.; Huang, M.-C. |
| 臺大學術典藏 |
2019-03-11T08:01:07Z |
The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via)
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Liang, J.H.;Chen, K.C.;Lee, J.J.;Chen, C.-H.;Liao, M.-H.; Liao, M.-H.; Chen, C.-H.; Lee, J.J.; Chen, K.C.; Liang, J.H. |
| 臺大學術典藏 |
2019-03-11T08:01:06Z |
Optimization of dislocation edge stress effects for si n-type metal-oxide-semiconductor field-effect transistors
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Kao, S.-C.;Liu, G.-H.;Yu, M.-Y.;Yang, C.;Chang, L.-C.;Chen, C.-H.;Liao, M.-H.; Liao, M.-H.; Chen, C.-H.; Chang, L.-C.; Yang, C.; Yu, M.-Y.; Liu, G.-H.; Kao, S.-C. |
| 臺大學術典藏 |
2019-03-11T08:01:06Z |
The novel chamber hardware design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique
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Kao, S.-C.;Chen, C.-H.;Liao, M.-H.; Liao, M.-H.; Chen, C.-H.; Kao, S.-C. |
| 臺大學術典藏 |
2019-03-11T08:01:05Z |
The investigation of optimal Si-Sigh hetero-stucture thin-film solar cell with theoretical calculation and quantitative analysis
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Chang, S.T.;Chen, Y.-Y.;Ho, W.S.;Liao, M.H.; Liao, M.H.; Ho, W.S.; Chen, Y.-Y.; Chang, S.T. |
| 臺大學術典藏 |
2019-03-11T08:01:05Z |
Local stress determination in Shallow Trench Insulator structures with one-side and two-sides Pad-SiN layer by polarized micro-Raman spectroscopy extraction and mechanical modelization
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Liao, M.H.; Chang, L.C.; Chang, L.C.;Liao, M.H. |
| 臺大學術典藏 |
2019-03-11T08:01:05Z |
Additional nitrogen ion-implantation treatment in STI to relax the intrinsic compressive stress for n-MOSFETs
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Kao, S.C.;Yang, C.;Chang, L.C.;Chen, C.H.;Liao, M.-H.; Liao, M.-H.; Chen, C.H.; Chang, L.C.; Yang, C.; Kao, S.C. |
| 臺大學術典藏 |
2019-03-11T08:01:04Z |
The dependence of the performance of strained NMOSFETs on channel width
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Liang, M.S.;Lee, T.L.;Liu, C.W.;Lee, J.Y.-M.;Wu, J.;Chen, C.H.;Yeh, L.;Liao, M.H.; Yeh, L.; Liao, M.H.; Chen, C.H.; Wu, J.; Lee, J.Y.-M.; Liu, C.W.; Lee, T.L.; Liang, M.S. |
| 臺大學術典藏 |
2019-03-11T08:01:03Z |
Electroluminescence from strained SiGe quantum dot light-emitting diodes
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Liu, C.W.;Cheng, T.-H.;Liao, M.H.; Cheng, T.-H.; Liao, M.H.; Liu, C.W. |
| 臺大學術典藏 |
2019-03-11T08:01:03Z |
Blue electroluminescence from metal/oxide/6H-SiC tunneling diodes
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Liu, C.W.;Deng, Y.;Hung, T.-A.;Cheng, T.-H.;Jan, S.-R.;Liao, M.H.; Jan, S.-R.; Cheng, T.-H.; Liao, M.H.; Hung, T.-A.; Deng, Y.; Liu, C.W. |
| 臺大學術典藏 |
2019-03-11T08:01:03Z |
SiGe/Si quantum-dot infrared photodetectors with δ doping
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Liu, C.W.;Peng, C.-Y.;Cho, C.-T.;Chen, Y.-Y.;Ho, W.S.;Yang, Y.-J.;Lee, C.-H.;Chang, C.-C.;Yu, C.-Y.;Lin, C.-H.;Liao, M.H.; Lin, C.-H.; Yu, C.-Y.; Chang, C.-C.; Lee, C.-H.; Yang, Y.-J.; Ho, W.S.; Chen, Y.-Y.; Liao, M.H.; Cho, C.-T.; Peng, C.-Y.; Liu, C.W. |
| 臺大學術典藏 |
2019-03-11T08:01:02Z |
Promising a-Si:H TFTs with high mechanical reliability for flexible display
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Yeh, Y.-H.;Tang, M.;Chang, S.T.;Cheng, C.-C.;Chen, P.-C.;Ho, K.-Y.;Lee, M.H.;Liao, M.H.; Lee, M.H.; Ho, K.-Y.; Chen, P.-C.; Cheng, C.-C.; Chang, S.T.; Tang, M.; Liao, M.H.; Yeh, Y.-H. |
| 臺大學術典藏 |
2019-03-11T08:01:02Z |
Electrically pumped Ge laser at room temperature
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Liu, C.W.;Hung, T.A.;Lee, C.T.;Kuo, P.-S.;Cheng, T.-H.;Liao, M.H.; Cheng, T.-H.; Kuo, P.-S.; Lee, C.T.; Liao, M.H.; Hung, T.A.; Liu, C.W. |
| 臺大學術典藏 |
2019-03-11T08:01:01Z |
Superior n-MOSFET performance by optimal stress design
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Liang, M.-S.;Liu, C.W.;Lee, T.-L.;Yeh, L.;Liao, M.H.; Liao, M.H.; Yeh, L.; Lee, T.-L.; Liu, C.W.; Liang, M.-S. |
| 臺大學術典藏 |
2019-03-11T08:01:00Z |
Strained Pt Schottky diodes on n-type Si and Ge
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Liu, C.W.;Peng, C.-Y.;Wu, H.-T.;Kuo, P.S.;Chang, S.T.;Liao, M.H.; Liao, M.H.; Chang, S.T.; Kuo, P.S.; Wu, H.-T.; Peng, C.-Y.; Liu, C.W. |
| 臺大學術典藏 |
2019-03-11T08:00:59Z |
2 μm emission from Si/Ge heterojunction LED and up to 1.55 μm detection by GOI detectors with strain-enhanced features
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Liu, C.W.;Chang, C.-C.;Guo, T.-H.;Lee, C.-Y.;Liang, C.-Y.;Chang, S.T.;Yu, M.-H.;Lee, C.-J.;Lin, C.-H.;Huang, C.-F.;Yu, C.-Y.;Liao, M.H.; Liao, M.H.; Yu, C.-Y.; Huang, C.-F.; Lin, C.-H.; Lee, C.-J.; Yu, M.-H.; Chang, S.T.; Liang, C.-Y.; Lee, C.-Y.; Guo, T.-H.; Chang, C.-C.; Liu, C.W. |
| 臺大學術典藏 |
2019-03-11T08:00:58Z |
Electroluminescence from the Ge quantum dot MOS tunneling diodes
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Liu, C.W.;Lin, C.-H.;Guo, T.-H.;Yu, C.-Y.;Liao, M.H.; Liao, M.H.; Yu, C.-Y.; Guo, T.-H.; Lin, C.-H.; Liu, C.W. |
| 臺大學術典藏 |
2019-03-11T08:00:58Z |
The process and optoelectronic characterization of Ge-on-insulator
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Liu, C.W.;Lee, C.-Y.;Lee, C.-J.;Huang, C.-F.;Yu, C.-Y.;Lin, C.-H.;Liao, M.H.; Lin, C.-H.; Yu, C.-Y.; Liao, M.H.; Huang, C.-F.; Lee, C.-J.; Lee, C.-Y.; Liu, C.W. |
| 臺大學術典藏 |
2019-03-11T08:00:58Z |
Novel schottky barrier strained germanium PMOS
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Liu, C.W.;Chang, S.T.;Maikap, S.;Yu, C.-Y.;Lee, M.H.;Yuan, F.;Peng, C.-Y.;Liao, M.H.; Peng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H.; Chang, S.T.; Liu, C.W. |
顯示項目 141-165 / 239 (共10頁)
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