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"liao m h"的相關文件
顯示項目 141-150 / 239 (共24頁)
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| 臺大學術典藏 |
2019-03-11T08:01:09Z |
Publisher's note: "Optimization of dislocation edge stress effects for Si N-type metal-oxide-semiconductor field-effect transistors" [Jpn. J. Appl. Phys. 52, 04CC20 (2013)]
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Kao, S.-C.;Liu, G.-H.;Yu, M.-A.;Yang, C.;Chang, L.-C.;Chen, C.-H.;Liao, M.-H.; Liao, M.-H.; Chen, C.-H.; Chang, L.-C.; Yang, C.; Yu, M.-A.; Liu, G.-H.; Kao, S.-C. |
| 臺大學術典藏 |
2019-03-11T08:01:08Z |
The improving Si 0.5 Ge 0.5 /Si interface quality through a low energy hydrogen plasma cleaning process and positron annihilation spectroscopy
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Chen, C.-H.;Chen, C.-W.;Hsieh, C.-F.;Liao, M.-H.; Hsieh, C.-F.; Chen, C.-W.; Chen, C.-H.; Liao, M.-H. |
| 臺大學術典藏 |
2019-03-11T08:01:08Z |
Residual stress of curvature sapphire substrate with GaN film released by the application of trench structures
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Hsieh, C.-F.;Chen, K.-C.;Kao, S.-C.;Chen, C.-H.;Lee, J.-J.;Liao, M.-H.; Liao, M.-H.; Lee, J.-J.; Chen, C.-H.; Kao, S.-C.; Chen, K.-C.; Hsieh, C.-F. |
| 臺大學術典藏 |
2019-03-11T08:01:08Z |
The demonstration of D-SMT stressor on Si and Ge n-FinFETs
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Liu, C.Y.;Lien, C.;Liu, K.H.;Hung, C.X.;Kao, S.C.;Huang, S.C.;Chen, P.G.;Liao, M.-H.; Liao, M.-H.; Chen, P.G.; Huang, S.C.; Kao, S.C.; Hung, C.X.; Liu, K.H.; Lien, C.; Liu, C.Y. |
| 臺大學術典藏 |
2019-03-11T08:01:07Z |
Periodic nanostructured thin-film solar cells
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Wu, T.-C.;Wu, H.-S.;Hsieh, C.-F.;Liao, M.-H.; Hsieh, C.-F.; Wu, H.-S.; Wu, T.-C.; Liao, M.-H. |
| 臺大學術典藏 |
2019-03-11T08:01:07Z |
Solar cell composed of periodic nano-structure and SiGe/Si thin film
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Wu, T.-C.;Wu, H.-S.;Hsieh, C.-F.;Liao, M.H.; Hsieh, C.-F.; Wu, H.-S.; Wu, T.-C.; Liao, M.H. |
| 臺大學術典藏 |
2019-03-11T08:01:07Z |
The chemical vapor deposition chamber design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D chamber modeling and experimental visual technique
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Huang, M.-C.;Kao, S.-C.;Chen, C.-H.;Liao, M.-H.; Liao, M.-H.; Chen, C.-H.; Kao, S.-C.; Huang, M.-C. |
| 臺大學術典藏 |
2019-03-11T08:01:07Z |
The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via)
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Liang, J.H.;Chen, K.C.;Lee, J.J.;Chen, C.-H.;Liao, M.-H.; Liao, M.-H.; Chen, C.-H.; Lee, J.J.; Chen, K.C.; Liang, J.H. |
| 臺大學術典藏 |
2019-03-11T08:01:06Z |
Optimization of dislocation edge stress effects for si n-type metal-oxide-semiconductor field-effect transistors
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Kao, S.-C.;Liu, G.-H.;Yu, M.-Y.;Yang, C.;Chang, L.-C.;Chen, C.-H.;Liao, M.-H.; Liao, M.-H.; Chen, C.-H.; Chang, L.-C.; Yang, C.; Yu, M.-Y.; Liu, G.-H.; Kao, S.-C. |
| 臺大學術典藏 |
2019-03-11T08:01:06Z |
The novel chamber hardware design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique
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Kao, S.-C.;Chen, C.-H.;Liao, M.-H.; Liao, M.-H.; Chen, C.-H.; Kao, S.-C. |
顯示項目 141-150 / 239 (共24頁)
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