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"liao po yung"的相關文件
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| 國立交通大學 |
2019-08-02T02:18:32Z |
An Energy-Band Model for Dual-Gate-Voltage Sweeping in Hydrogenated Amorphous Silicon Thin-Film Transistors
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Chen, Guan-Fu; Chen, Hong-Chih; Chang, Ting-Chang; Huang, Shin-Ping; Chen, Hua-Mao; Liao, Po-Yung; Chen, Jian-Jie; Kuo, Chuan-Wei; Lai, Wei-Chih; Chu, Ann-Kuo; Lin, Sung-Chun; Yeh, Cheng-Yen; Chang, Chia-Sen; Tsai, Cheng-Ming; Yu, Ming-Chang; Zhang, Shengdong |
| 國立交通大學 |
2019-04-02T06:00:13Z |
Effect of SiO2 Buffer Layer Thickness on Performance and Reliability of Flexible Polycrystalline Silicon TFTs Fabricated on Polyimide
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Chen, Bo-Wei; Chang, Ting-Chang; Hung, Yu-Ju; Huang, Shin-Ping; Chen, Hua-Mao; Huang, Hui-Chun; Liao, Po-Yung; Chiang, Hsiao-Cheng; Zheng, Yu-Zhe; Yeh, Wei-Heng; Lin, Yu-Ho; Liang, Jonathan Siher; Chu, Ann-Kuo; Li, Hung-Wei; Tsai, Chih-Hung; Lu, Hsueh-Hsing |
| 國立交通大學 |
2018-08-21T05:54:16Z |
Impact of repeated uniaxial mechanical strain on flexible a-IGZO thin film transistors with symmetric and asymmetric structures
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Liao, Po-Yung; Chang, Ting-Chang; Su, Wan-Ching; Chen, Bo-Wei; Chen, Li-Hui; Hsieh, Tien-Yu; Yang, Chung-Yi; Chang, Kuan-Chang; Zhang, Sheng-Dong; Huang, Yen-Yu; Chang, Hsi-Ming; Chiang, Shin-Chuan |
| 國立交通大學 |
2018-08-21T05:54:05Z |
The effect of device electrode geometry on performance after hot-carrier stress in amorphous In-Ga-Zn-O thin film transistors with different via-contact structures
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Liao, Po-Yung; Chang, Ting-Chang; Chen, Yu-Jia; Su, Wan-Ching; Chen, Bo-Wei; Chen, Li-Hui; Hsieh, Tien-Yu; Yang, Chung-Yi; Chang, Kuan-Chang; Zhang, Sheng-Dong; Huang, Yen-Yu; Chang, Hsi-Ming; Chiang, Shin-Chuan |
| 國立交通大學 |
2018-08-21T05:53:58Z |
The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors (vol 110, 103502, 2017)
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Su, Wan-Ching; Chang, Ting-Chang; Liao, Po-Yung; Chen, Yu-Jia; Chen, Bo-Wei; Hsieh, Tien-Yu; Yang, Chung-I; Huang, Yen-Yu; Chang, Hsi-Ming; Chiang, Shin-Chuan; Chang, Kuan-Chang; Tsai, Tsung-Ming |
| 國立交通大學 |
2018-08-21T05:53:55Z |
Role of H2O Molecules in Passivation Layer of a-InGaZnO Thin Film Transistors
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Chien, Yu-Chieh; Chang, Ting-Chang; Chiang, Hsiao-Cheng; Chen, Hua-Mao; Tsao, Yu-Ching; Shih, Chih-Cheng; Chen, Bo-Wei; Liao, Po-Yung; Chu, Ting-Yang; Yang, Yi-Chieh; Hung, Yu-Ju; Tsai, Tsung-Ming; Chang, Kuan-Chang |
| 國立交通大學 |
2018-08-21T05:53:54Z |
Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low Temperature Poly-Si Thin-Film Transistors
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Chen, Bo-Wei; Chang, Ting-Chang; Chang, Kuan-Chang; Hung, Yu-Ju; Huang, Shin-Pin; Chen, Hua-Mao; Liao, Po-Yung; Lin, Yu-Ho; Huang, Hui-Chun; Chiang, Hsiao-Cheng; Yang, Chung-I; Zheng, Yu-Zhe; Chu, Ann-Kuo; Li, Hung-Wei; Tsai, Chih-Hung; Lu, Hsueh-Hsing; Wang, Terry Tai-Jui; Chang, Tsu-Chiang |
| 國立交通大學 |
2018-08-21T05:53:53Z |
The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors
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Su, Wan-Ching; Chang, Ting-Chang; Liao, Po-Yung; Chen, Yu-Jia; Chen, Bo-Wei; Hsieh, Tien-Yu; Yang, Chung-I; Huang, Yen-Yu; Chang, Hsi-Ming; Chiang, Shin-Chuan; Chang, Kuan-Chang; Tsai, Tsung-Ming |
| 國立交通大學 |
2018-08-21T05:53:47Z |
Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors
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Yang, Chung-I.; Chang, Ting-Chang; Liao, Po-Yung; Chen, Li-Hui; Chen, Bo-Wei; Chou, Wu-Ching; Chen, Guan-Fu; Lin, Sung-Chun; Yeh, Cheng-Yen; Tsai, Cheng-Ming; Yu, Ming-Chang; Zhang, Shengdong |
| 國立交通大學 |
2018-08-21T05:53:13Z |
Combined Effects of Light Illumination and Various Bottom Gate Length on the Instability of Via-Contact-Type Amorphous InGaZnO Thin-Film Transistors
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Yang, Chung-I; Chang, Ting-Chang; Liao, Po-Yung; Chen, Bo-Wei; Chou, Wu-Ching; Chen, Guan-Fu; Huang, Shin-Ping; Zheng, Yu-Zhe; Wang, Yu-Xuan; Liu, Hsi-Wen; Lin, Chien-Yu; Lin, Yu-Shan; Lu, Ying-Hsin; Zhang, Shengdong |
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