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| 國立交通大學 |
2014-12-08T15:21:04Z |
Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate
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Chiu, Ching-Hsueh; Lin, Da-Wei; Li, Zhen-Yu; Ling, Shih-Chun; Kuo, Hao-Chung; Lu, Tien-Chang; Wang, Shing-Chung; Liao, Wei-Tasi; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Sawaki, Nobuhiko |
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