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Showing items 1-11 of 11 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-03T06:47:05Z |
A thin FinFET Si-fin body structure fabricated with 193nm scanner photolithography and composite hard mask etching technique upon bulk-Si substrate
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Liao, Wen-Shiang; Liu, Yu-Huan; Chang, Wen-Tung; Chen, Tung-Hung; Shih, Tommy; Tsen, Huan-Chiu; Chung, Lee |
| 國立交通大學 |
2019-04-03T06:47:05Z |
A thick CESL stressed ultra-small (Lg=40nm) SiGe-channel MOSFET fabricated with 193nm scanner lithography and TEOS hard mask etching
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Liao, Wen-Shiang; Chen, Tung-Hung; Lin, Hsin-Hung; Chang, Wen-Tung |
| 國立交通大學 |
2019-04-02T05:59:43Z |
Impact of Highly Compressive Interlayer-Dielectric-SiNx Stressing Layer on 1/f Noise and Reliability of SiGe-Channel pMOSFETs
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Chen, Yu-Ting; Chen, Kun-Ming; Liao, Wen-Shiang; Huang, Guo-Wei; Huang, Fon-Shan |
| 國立交通大學 |
2017-04-21T06:48:55Z |
RF Noise Modeling of SiGe HBTs Using Four-Port De-embedding Method
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Chen, Kun-Ming; Chen, Han-Yu; Huang, Guo-Wei; Liao, Wen-Shiang; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:47:37Z |
Impact of Highly Compressive Interlayer-Dielectric-SiN(x) Stressing Layer on 1/f Noise and Reliability of SiGe-Channel pMOSFETs
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Chen, Yu-Ting; Chen, Kun-Ming; Liao, Wen-Shiang; Huang, Guo-Wei; Huang, Fon-Shan |
| 國立交通大學 |
2014-12-08T15:22:45Z |
LDMOS Transistor High-Frequency Performance Enhancements by Strain
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Chen, Kun-Ming; Huang, Guo-Wei; Chen, Bo-Yuan; Chiu, Chia-Sung; Hsiao, Chih-Hua; Liao, Wen-Shiang; Chen, Ming-Yi; Yang, Yu-Chi; Wang, Kai-Li; Liu, Chee Wee |
| 淡江大學 |
2014 |
指定頻段μ合成定階控制器設計
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廖文翔; Liao, Wen-Shiang |
| 國立聯合大學 |
2010 |
Impact of highly compressive interlayer-dielectric-SiNx stressing layer on 1/f noise and reliability of sige-channel pMOSFETs
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Chen, Yu-Ting ; Chen, Kun-Ming; Liao, Wen-Shiang; Huang, Guo-Wei; Huang, Fon-Shan |
| 國立成功大學 |
2008-06 |
Investigation and modeling of hot carrier effects on performance of 45-and 55-nm NMOSFETs with RF automatic measurement
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Tang, Mao-Chyuan; Fang, Yean-Kuen; Liao, Wen-Shiang; Chen, David C.; Yeh, Chune-Sin; Chien, Shan-Chieh |
| 國立臺灣大學 |
2008 |
PMOS Hole Mobility Enhancement Through SiGe Conductive Channel and Highly Compressive ILD- SiNx Stressing Layer
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Liao, Wen-Shiang; Liaw, Yue-Gie; Tang, Mao-Chyuan; Chen, Kun-Ming; Huang, Sheng-Yi; Peng, C.-Y.; Liu, Chee Wee |
| 臺大學術典藏 |
2008 |
PMOS Hole Mobility Enhancement Through SiGe Conductive Channel and Highly Compressive ILD- SiNx Stressing Layer
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Liao, Wen-Shiang; Liaw, Yue-Gie; Tang, Mao-Chyuan; Chen, Kun-Ming; Huang, Sheng-Yi; Peng, C.-Y.; Liu, Chee Wee; Liao, Wen-Shiang; Liaw, Yue-Gie; Tang, Mao-Chyuan; Chen, Kun-Ming; Huang, Sheng-Yi; Peng, C.-Y.; Liu, Chee Wee |
Showing items 1-11 of 11 (1 Page(s) Totally)
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