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机构 日期 题名 作者
國立交通大學 2014-12-08T15:40:14Z Modeling and design of the high performance step SOI-LIGBT power devices by partition mid-point method Chang, FL; Lin, MJ; Lee, GY; Chen, YS; Liaw, CW; Cheng, HC
國立交通大學 2014-12-08T15:40:10Z Characterizing trench-gate power metal-oxide-semiconductor field effect transistor with multi-layer dielectrics at the trench bottom Lin, MJ; Liaw, CW; Chang, FL; Cheng, HC
國立交通大學 2014-12-08T15:40:02Z Lateral superjunction reduced surface field structure for the optimization of breakdown and conduction characteristics, in a high-voltage lateral double diffused metal oxide field effect transistor Lin, MJ; Lee, TH; Chang, FL; Liaw, CW; Cheng, HC
國立交通大學 2014-12-08T15:39:57Z Novel low-temperature polycrystalline-silicon power devices with very-low on-resistance using excimer laser-crystallization Cheng, HC; Chang, FL; Lin, MJ; Tsai, CC; Liaw, CW
國立交通大學 2014-12-08T15:38:55Z Investigation of a 450 V rating silicon-on-insulator lateral-double-diffused-metal-oxide-semiconductor fabrication by 12/25/5/40 V bipolar-complementary metal-oxide-semiconductor double-diffused metal-oxide-semiconductor process on bulk silicon substrate Chang, FL; Lin, MJ; Liaw, CW; Liao, TC; Cheng, HC

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