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Showing items 1-5 of 5 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:40:14Z |
Modeling and design of the high performance step SOI-LIGBT power devices by partition mid-point method
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Chang, FL; Lin, MJ; Lee, GY; Chen, YS; Liaw, CW; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:40:10Z |
Characterizing trench-gate power metal-oxide-semiconductor field effect transistor with multi-layer dielectrics at the trench bottom
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Lin, MJ; Liaw, CW; Chang, FL; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:40:02Z |
Lateral superjunction reduced surface field structure for the optimization of breakdown and conduction characteristics, in a high-voltage lateral double diffused metal oxide field effect transistor
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Lin, MJ; Lee, TH; Chang, FL; Liaw, CW; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:39:57Z |
Novel low-temperature polycrystalline-silicon power devices with very-low on-resistance using excimer laser-crystallization
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Cheng, HC; Chang, FL; Lin, MJ; Tsai, CC; Liaw, CW |
| 國立交通大學 |
2014-12-08T15:38:55Z |
Investigation of a 450 V rating silicon-on-insulator lateral-double-diffused-metal-oxide-semiconductor fabrication by 12/25/5/40 V bipolar-complementary metal-oxide-semiconductor double-diffused metal-oxide-semiconductor process on bulk silicon substrate
|
Chang, FL; Lin, MJ; Liaw, CW; Liao, TC; Cheng, HC |
Showing items 1-5 of 5 (1 Page(s) Totally)
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