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"liaw u h"的相关文件
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| 國立成功大學 |
2008-03 |
AlGaN/GaN heterostructure grown on 1 degrees-tilt sapphire substrate by MOCVD
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Lam, K. T.; Yu, C. L.; Chang, Ping-Chuan; Liaw, U. H.; Chang, Shoou-Jinn; Lin, J. C. |
| 國立成功大學 |
2008-01-15 |
ZnO epitaxial layers grown on nitridated Si(100) substrate with HT-GaN/LT-ZnO double buffer
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Chang, Sheng-Po; Chang, Shoou-Jinn; Chiou, Y. Z.; Lu, C. Y.; Lin, T. K.; Kuo, C. F.; Chang, Hong-Ming; Liaw, U. H. |
| 國立成功大學 |
2007-04 |
Effects of thermal annealing on In-induced metastable defects in InGaN films
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Hung, H.; Lam, Kin-Tak; Chang, Shoou-Jinn; Kuan, H.; Chen, Chin-Hsiang; Liaw, U. H. |
| 國立成功大學 |
2007 |
Al0.22Ga0.78N/GaN HFETs prepared on vicinal-cut sapphire substrates
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Lam, K. T.; Yu, C. L.; Chang, Ping-Chuan; Liaw, U. H.; Lin, J. C.; Chang, Shoou-Jinn |
| 國立成功大學 |
2007 |
Influence of process flow on the characteristics of strained-Si nMOSFETs
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Lam, K. T.; Wu, S. L.; Chang, Shoou-Jinn; Wang, Y. P.; Liaw, U. H. |
| 國立成功大學 |
2004-03-25 |
Electrical and reliability characteristics of oxynitride gate dielectric grown by diluted steam rapid thermal oxidation and annealed in nitric oxide
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Liu, C. H.; Chang, Shoou-Jinn; Chen, Jone-Fang; Lee, J. S.; Chen, S. C.; Liaw, U. H. |
| 國立成功大學 |
2004-02 |
Ion-implantation technology for improved GaAs MESFETs performance
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Liu, C. H.; Wu, L. W.; Chang, Shoou-Jinn; Chen, Jenn-Fang; Liaw, U. H.; Chen, S. C. |
| 國立成功大學 |
2003-04 |
InGaN/GaN light-emitting diodes with ITO p-contact layers prepared by RF sputtering
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Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lin, Y. C.; Hsu, Y. P.; Shei, Shih-Chang; Chen, S. C.; Liu, C. H.; Liaw, U. H. |
| 國立成功大學 |
2003-02-15 |
High-quality ultrathin chemical-vapor-deposited Ta2O5 capacitors prepared by high-density plasma annealing
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Liu, C. H.; Chang, Shoou-Jinn; Chen, J. F.; Chen, S. C.; Lee, J. S.; Liaw, U. H. |
| 國立成功大學 |
2003-01-02 |
Effects of O-2 thermal annealing on the properties of CVD Ta2O5 thin films
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Lee, J. S.; Chang, Shoou-Jinn; Chen, Jone-Fang; Sun, S. C.; Liu, C. H.; Liaw, U. H. |
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