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Institution Date Title Author
國立成功大學 2023 Scaled contact length with low contact resistance in monolayer 2D channel transistors Wu, Wu W.-C.;Hung, T.Y.T.;Sathaiya, D.M.;Fan, D.;Arutchelvan, G.;Hsu, C.-F.;Su, Su S.-K.;Chou, A.S.;Chen, E.;Li, W.;Yu, Z.;Qiu, H.;Yang, Yang Y.-M.;Lin, K.-I.;Shen, Y.-Y.;Chang, W.-H.;Liew, S.L.;Hou, V.;Cai, J.;Wu, C.-C.;Wu, J.;Philip, Wong H.-S.;Wang, X.;Chien, Chien C.-H.;Cheng, Cheng C.-C.;Radu, I.P.
國立成功大學 2022 pMOSFET with CVD-grown 2D semiconductor channel enabled by ultra-thin and fab-compatible spacer doping Hung, T.Y.T.;Li, M.-Z.;Yun, W.S.;Chou, S.A.;Su, Su S.-K.;Chen, E.;Liew, S.L.;Yang, Yang Y.-M.;Lin, K.-I.;Hou, V.;Lee, T.Y.;Wang, H.;Cheng, A.;Lin, M.-T.;Wong, H.-S.P.;Radu, I.P.
臺大學術典藏 2021-09-02T00:04:18Z High On-State Current in Chemical Vapor Deposited Monolayer MoS2nFETs with Sn Ohmic Contacts Chou A.-S;Cheng C.-C;Liew S.-L;Ho P.-H;Wang S.-Y;Chang Y.-C;Chang C.-K;Su Y.-C;Huang Z.-D;Fu F.-Y;Hsu C.-F;Chung Y.-Y;Chang W.-H;Li L.-J;Wu C.-I.; Chou A.-S; CHIH-I WU et al.

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