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"lin c a"的相關文件
顯示項目 46-70 / 106 (共5頁)
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| 臺大學術典藏 |
2020-06-11T06:37:46Z |
ZnO/Al2O3 core-shell nanorod arrays: Growth, structural characterization, and luminescent property
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Lin, C.A.; Chen, M.J.; Lin, G.R.; He, J.H.; GONG-RU LIN; Chen, C.Y.;Lin, C.A.;Chen, M.J.;Lin, G.R.;He, J.H.; Chen, C.Y. |
| 臺大學術典藏 |
2020-06-11T06:37:38Z |
Subwavelength Si nanowire arrays for self-cleaning antireflection coatings
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Dai, Y.-A.;Chang, H.-C.;Lai, K.-Y.;Lin, C.-A.;Chung, R.-J.;Lin, G.-R.;He, J.-H.; Dai, Y.-A.; Chang, H.-C.; Lai, K.-Y.; Lin, C.-A.; Chung, R.-J.; Lin, G.-R.; He, J.-H.; GONG-RU LIN |
| 臺大學術典藏 |
2020-06-04T07:54:14Z |
A 24 GHz low power VCO with transformer feedback
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Lin, C.-A.;Kuo, J.-L.;Lin, K.-Y.;Wang, H.; Lin, C.-A.; Kuo, J.-L.; Lin, K.-Y.; Wang, H.; HUEI WANG |
| 臺大學術典藏 |
2020-06-04T07:50:37Z |
High-Q Si Microsphere Resonators Fabricated from Si-Cored Fibers for WGMs Excitation
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Lin, C.A.;Chen, J.H.;Wang, L.A.; Lin, C.A.; Chen, J.H.; Wang, L.A.; LON A. WANG |
| 臺大學術典藏 |
2020-06-02T07:28:20Z |
Dramatic enhancement of optical-field-ionization collisional-excitation X-ray lasing by an optically preformed plasma waveguide
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Chen, S.-Y.;Wang, J.;Lin, J.-Y.;Lin, C.-A.;Lin, P.-H.;Chou, M.-C.; Chou, M.-C.; Lin, P.-H.; Lin, C.-A.; Lin, J.-Y.; Wang, J.; Chen, S.-Y. |
| 臺大學術典藏 |
2020-05-26T09:26:39Z |
Acquired BRAF V600E Mutation as Resistant Mechanism after Treatment with Osimertinib
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Shih J.-Y; Yu C.-J; Chih-Hsin CHIH-HSIN YANG; Lin C.-A; Liao W.-Y; Ho C.-C; Chih-Hsin Yang;Yu C.-J;Shih J.-Y;Lin C.-A;Liao W.-Y;Ho C.-C |
| 臺大學術典藏 |
2020-03-11T08:06:29Z |
Hybrid repair of simultaneous multiple mycotic aortic aneurysms
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Lin C.-A.; CHIH-YANG CHAN; Wu I.-H. |
| 臺大學術典藏 |
2020-03-07T06:56:25Z |
Cancer-associated fibroblasts regulate the plasticity of lung cancer stemness via paracrine signalling
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Chang G.-C.; Chu W.-C.; Lee Y.-M.; Lee J.-Y.; Lee P.-J.; Li K.-C.; Chen H.-W.; Yang P.-C.; Elizabeth Chou H.-Y.; Pan S.-H.; Lin C.-Y.; Louisa Chen Y.-J.; Yuan S.-S.; Chen W.-J.;Ho C.-C.;Yih-Leong Chang;Chen H.-Y.;Lin C.-A.;Ling T.-Y.;Yu S.-L.;Yuan S.-S.;Louisa Chen Y.-J.;Lin C.-Y.;Pan S.-H.;Elizabeth Chou H.-Y.;Chang G.-C.;Chu W.-C.;Lee Y.-M.;Lee J.-Y.;Lee P.-J.;Li K.-C.;Chen H.-W.;Yang P.-C.; Chen W.-J.; Ho C.-C.; YIH-LEONG CHANG; Chen H.-Y.; Lin C.-A.; Ling T.-Y.; Yu S.-L. |
| 臺大學術典藏 |
2020-03-06T05:26:14Z |
Cancer-associated fibroblasts regulate the plasticity of lung cancer stemness via paracrine signalling
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Chen W.-J.; Ho C.-C.; YIH-LEONG CHANG; Chen H.-Y.; Lin C.-A.; Ling T.-Y.; Yu S.-L.; Yuan S.-S.; Louisa Chen Y.-J.; Lin C.-Y.; Pan S.-H.; Elizabeth Chou H.-Y.; Chang G.-C.; Chu W.-C.; Lee Y.-M.; Lee J.-Y.; Lee P.-J.; Li K.-C.; Chen H.-W.; Yang P.-C. |
| 臺大學術典藏 |
2020-02-18T02:13:12Z |
Hybrid repair of simultaneous multiple mycotic aortic aneurysms
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Lin C.-A.; Chan C.-Y.; I-HUI WU |
| 臺大學術典藏 |
2020-02-15T03:52:21Z |
Deconstructing B2B, co-creation and service deployment in East Asia: evidence from Taiwan and PRC manufacturers
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Lin, C.-A.;Chen, H.; Lin, C.-A.; Chen, H.; HOMIN CHEN |
| 臺大學術典藏 |
2019-12-27T07:49:39Z |
Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al 2O3/Ga2O3(Gd2O3) as gate dielectrics
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MINGHWEI HONG;Tsai, W.;Kwo, J.;Hong, M.;Lin, C.A.;Chang, P.;Chiu, H.C.;Chen, C.P.;Lin, T.D.; Lin, T.D.; Chen, C.P.; Chiu, H.C.; Chang, P.; Lin, C.A.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:36Z |
Nano-electronics of high 庥 dielectrics on ingaas for key technologies beyond Si CMOS
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Lin, T.D.;Chang, P.;Chiu, H.C.;Chang, Y.C.;Lin, C.A.;Chang, W.H.;Lee, Y.J.;Chang, Y.H.;Huang, M.L.;Kwo, J.;Hong, M.; Lin, T.D.; Chang, P.; Chiu, H.C.; Chang, Y.C.; Lin, C.A.; Chang, W.H.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:35Z |
Self-aligned inversion-channel In0.75Ga0.25As MOSFETs using MBE-Al2O3/Ga2O3(Gd 2O3) and ALD-Al2O3 as gate dielectrics
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Lin, T.D.;Chiu, H.C.;Chang, P.;Chang, Y.H.;Lin, C.A.;Chang, W.H.;Kwo, J.;Tsai, W.;Hong, M.; Lin, T.D.; Chiu, H.C.; Chang, P.; Chang, Y.H.; Lin, C.A.; Chang, W.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:34Z |
Engineering of threshold voltages in molecular beam epitaxy-grown Al 2 O3 / Ga2 O3 (Gd2 O 3) / In0.2 Ga0.8 As
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Wu, Y.D.;Lin, T.D.;Chiang, T.H.;Chang, Y.C.;Chiu, H.C.;Lee, Y.J.;Hong, M.;Lin, C.A.;Kwo, J.; Wu, Y.D.; Lin, T.D.; Chiang, T.H.; Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:34Z |
Achieving nearly free fermi-level movement and Vthengineering in Ga2O3(Gd2O3)/In0.2Ga0.8As
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Lin, T.D.;Wu, Y.D.;Chang, Y.C.;Chiang, T.H.;Chuang, C.Y.;Lin, C.A.;Chang, W.H.;Chiu, H.C.;Tsai, W.;Kwo, J.;Hong, M.; Lin, T.D.; Wu, Y.D.; Chang, Y.C.; Chiang, T.H.; Chuang, C.Y.; Lin, C.A.; Chang, W.H.; Chiu, H.C.; Tsai, W.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:33Z |
Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-庥 dielectrics on Ge without interfacial layers
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Chu, L.K.;Chu, R.L.;Lin, T.D.;Lee, W.C.;Lin, C.A.;Huang, M.L.;Lee, Y.J.;Kwo, J.;Hong, M.; Chu, L.K.; Chu, R.L.; Lin, T.D.; Lee, W.C.; Lin, C.A.; Huang, M.L.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:32Z |
Achieving high-performance Ge MOS devices using high-庥 gate dielectrics Ga2O3(Gd2O3) of sub-nm EOT
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Chu, L.K.;Chu, R.L.;Lin, C.A.;Lin, T.D.;Chiang, T.H.;Kwo, J.;Hong, M.; Chu, L.K.; Chu, R.L.; Lin, C.A.; Lin, T.D.; Chiang, T.H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:31Z |
Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2 O3/Ga2O3(Gd2O 3) as the gate dielectric
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Chang, W.H.; Chiang, T.H.; Wu, Y.D.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG; Chang, W.H.;Chiang, T.H.;Wu, Y.D.;Hong, M.;Lin, C.A.;Kwo, J. |
| 臺大學術典藏 |
2019-12-27T07:49:31Z |
InGaAs and Ge MOSFETs with a common high 庥 gate dielectric
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Lee, W.C.;Lin, T.D.;Chu, L.K.;Chang, P.;Chang, Y.C.;Chu, R.L.;Chiu, H.C.;Lin, C.A.;Chang, W.H.;Chiang, T.H.;Lee, Y.J.;Hong, M.;Kwo, J.; Lee, W.C.; Lin, T.D.; Chu, L.K.; Chang, P.; Chang, Y.C.; Chu, R.L.; Chiu, H.C.; Lin, C.A.; Chang, W.H.; Chiang, T.H.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:30Z |
Erratum: Attainment of low interfacial trap density absent of a large midgap peak in In0.2 Ga0.8 As by Ga2 O3 (Gd2 O3) passivation (Applied Physics Letters (2011) 98 (062108))
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Dekoster, J.; Hoffmann, T.Y.; Hong, M.; Kwo, J.; MINGHWEI HONG; Lin, C.A.;Chiu, H.C.;Chiang, T.H.;Lin, T.D.;Chang, Y.H.;Chang, W.H.;Chang, Y.C.;Wang, W.-E.;Dekoster, J.;Hoffmann, T.Y.;Hong, M.;Kwo, J.; Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Lin, T.D.; Chang, Y.H.; Chang, W.H.; Chang, Y.C.; Wang, W.-E. |
| 臺大學術典藏 |
2019-12-27T07:49:30Z |
Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8 As by Ga2O3(Gd 2O3) passivation
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Lin, C.A.;Chiu, H.C.;Chiang, T.H.;Lin, T.D.;Chang, Y.H.;Chang, W.H.;Chang, Y.C.;Wang, W.-E.;Dekoster, J.;Hoffmann, T.Y.;Hong, M.;Kow, J.; Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Lin, T.D.; Chang, Y.H.; Chang, W.H.; Chang, Y.C.; Wang, W.-E.; Dekoster, J.; Hoffmann, T.Y.; Hong, M.; Kow, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:29Z |
Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al2O3 on freshly molecular beam epitaxy grown GaAs
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Chang, Y.H.;Huang, M.L.;Chang, P.;Lin, C.A.;Chu, Y.J.;Chen, B.R.;Hsu, C.L.;Kwo, J.;Pi, T.W.;Hong, M.; Chang, Y.H.; Huang, M.L.; Chang, P.; Lin, C.A.; Chu, Y.J.; Chen, B.R.; Hsu, C.L.; Kwo, J.; Pi, T.W.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:28Z |
Low interfacial density of states around midgap in MBE-Ga2O 3(Gd2O3)/In0.2Ga0.8As
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Lin, C.A.;Chiu, H.C.;Chiang, T.H.;Chang, Y.C.;Lin, T.D.;Kwo, J.;Wang, W.-E.;Dekoster, J.;Heyns, M.;Hong, M.; Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Chang, Y.C.; Lin, T.D.; Kwo, J.; Wang, W.-E.; Dekoster, J.; Heyns, M.; Hong, M. |
| 臺大學術典藏 |
2019-12-27T07:49:24Z |
Realization of high-quality HfO 2 on In 0.53Ga 0.47As by in-situ atomic-layer-deposition
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Lin, T.D.; Chang, Y.H.; Lin, C.A.; Huang, M.L.; Lee, W.C.; Kwo, J.; Hong, M.; MINGHWEI HONG |
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