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Institution Date Title Author
國立交通大學 2014-12-08T15:25:47Z InGaN-based light-emitting diode with undercut side wall Kao, CC; Chu, JT; Huang, HW; Peng, YC; Yu, CC; Hseih, YL; Lin, CF; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:25:39Z Enhancement of light-output of GaN-based light-emitting diodes by bias-assisted photoelectrochemical oxidation of p-GaN in H2O Lai, FI; Chen, WY; Kao, CC; Lin, CF; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:25:21Z A low memory QCB-based DWT for JPEG2000 coprocessor supporting large tile size Wu, BF; Lin, CF
國立交通大學 2014-12-08T15:19:23Z Fabrication and micro-photoluminescence investigation of Mg-doped gallium nitride nanorods Chang, YH; Hsueh, TH; Lai, FI; Chang, CW; Yu, CC; Huang, HW; Lin, CF; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:18:37Z Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflector Kao, CC; Peng, YC; Yao, HH; Tsai, JY; Chang, YH; Chu, JT; Huang, HW; Kao, TT; Lu, TC; Kuo, HC; Wang, SC; Lin, CF
國立交通大學 2014-12-08T15:18:07Z Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer Chang, YA; Luo, CY; Ku, HC; Kuo, YK; Lin, CF; Wang, SC
國立交通大學 2014-12-08T15:18:00Z A high-performance and memory-efficient pipeline architecture for the 5/3 and 9/7 discrete wavelet transform of JPEG2000 codec Wu, BF; Lin, CF
國立交通大學 2014-12-08T15:17:32Z MOCVD growth of highly strained 1.3 mu m InGaAs : Sb/GaAs vertical cavity surface emitting laser Chang, YA; Chu, JT; Ko, CT; Kuo, HC; Lin, CF; Wang, SC
國立交通大學 2014-12-08T15:17:16Z The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectors Kao, CC; Lu, TC; Huang, HW; Chu, JT; Peng, YC; Yao, HH; Tsai, JY; Kao, TT; Kuo, HC; Wang, SC; Lin, CF
國立交通大學 2014-12-08T15:17:00Z Memory-efficient architecture for JPEG 2000 coprocessor with large tile image Wu, BF; Lin, CF

Showing items 86-95 of 210  (21 Page(s) Totally)
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