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机构 日期 题名 作者
國立交通大學 2014-12-08T15:46:12Z Wireless ATM-based multicode CDMA transport architecture for MPEG-2 video transmission Chang, PR; Lin, CF
國立交通大學 2014-12-08T15:46:07Z Effects of methyl silsesquioxane electron-beam curing on device characteristics of logic and four-transistor static random-access memory Lin, CF; Tung, IC; Feng, MS
國立交通大學 2014-12-08T15:45:52Z Design of spread spectrum multicode CDMA transport architecture for multimedia services Chang, PR; Lin, CF
國立交通大學 2014-12-08T15:45:38Z Design of multicode CDMA systems for 3-D stereoscopic video over wireless ATM networks Chang, PR; Lin, CF; Wu, MJ
國立交通大學 2014-12-08T15:45:26Z W ohmic contact for highly doped n-type GaN films Lin, CF; Cheng, HC; Chi, GC
國立交通大學 2014-12-08T15:45:24Z Improved contact performance of GaN film using Si diffusion Lin, CF; Cheng, HC; Chi, GC; Bu, CJ; Feng, MS
國立交通大學 2014-12-08T15:44:32Z Properties of Mg activation in thermally treated GaN : Mg films Lin, CF; Cheng, HC; Chang, CC; Chi, GC
國立交通大學 2014-12-08T15:44:31Z Hiding data in images by optimal moderately-significant-bit replacement Wang, RZ; Lin, CF; Lin, JC
國立交通大學 2014-12-08T15:44:08Z Image hiding by optimal LSB substitution and genetic algorithm Wang, RZ; Lin, CF; Lin, JC
國立交通大學 2014-12-08T15:43:53Z Beryllium-implanted P-type GaN with high carrier concentration Yu, CC; Chu, CF; Tsai, JY; Lin, CF; Lan, WH; Chiang, CI; Wang, SC
國立交通大學 2014-12-08T15:42:17Z A study of subbands in AlGaN/GaN high-electron-mobility transistor structures using low-temperature photoluminescence spectroscopy Fang, CY; Lin, CF; Chang, EY; Feng, MS
國立交通大學 2014-12-08T15:42:04Z Gallium nitride nanorods fabricated by inductively coupled plasma reactive ion etching Yu, CC; Chu, CF; Tsai, JY; Huang, HW; Hsueh, TH; Lin, CF; Wang, SC
國立交通大學 2014-12-08T15:42:03Z Electrical and optical properties of beryllium-implanted Mg-doped GaN Yu, CC; Chu, CF; Tsai, JY; Lin, CF; Wang, SC
國立交通大學 2014-12-08T15:41:18Z Comparison of p-side down and p-side up GaN light-emitting diodes fabricated by laser lift-off Chu, CF; Yu, CC; Cheng, HC; Lin, CF; Wang, SC
國立交通大學 2014-12-08T15:40:54Z Correlation between dewatering index and dewatering performance of three mechanical dewatering devices Pan, JRS; Huang, CP; Cherng, MY; Li, KC; Lin, CF
國立交通大學 2014-12-08T15:40:39Z Etching damages on AlGaN, GaN and InGaN caused by hybrid inductively coupled plasma etch and photoenhanced chemical wet etch by Schottky contact characterizations Fang, CY; Huang, WJ; Chang, EY; Lin, CF; Feng, MS
國立交通大學 2014-12-08T15:39:44Z MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength Kuo, HC; Chang, YS; Lin, CF; Lu, TC; Wang, SC
國立交通大學 2014-12-08T15:39:44Z Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes Lin, CF; Yao, HH; Lu, JW; Hsieh, YL; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:39:36Z MOCVD growth of AlN/GaN DBR structures under various ambient conditions Yao, HH; Lin, CF; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:39:26Z Effect of rapid thermal annealing on beryllium implanted p-type GaN Huang, HW; Kao, CC; Tsai, JY; Yu, CC; Chu, CF; Lee, JY; Kuo, SY; Lin, CF; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:39:26Z Study of dry etching for GaN and InGaN-based laser structure using inductively coupled plasma reactive ion etching Kao, CC; Huang, HW; Tsai, JY; Yu, CC; Lin, CF; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:39:20Z Study of GaN light-emitting diodes fabricated by laser lift-off technique Chu, CF; Lai, FI; Chu, JT; Yu, CC; Lin, CF; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:37:27Z Investigation of GaN LED with Be-implanted Mg-doped GaN layer Huang, HW; Kao, CC; Chu, JT; Kuo, HC; Wang, SC; Yu, CC; Lin, CF
國立交通大學 2014-12-08T15:37:26Z Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching Huang, HW; Kao, CC; Hsueh, TH; Yu, CC; Lin, CF; Chu, JT; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:37:24Z An efficient architecture for JPEG2000 coprocessor Wu, BF; Lin, CF

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