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Taiwan Academic Institutional Repository >
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"lin chao cheng"
Showing items 11-35 of 91 (4 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T09:23:34Z |
Hypomania associated with adjunctive aripiprazole in an elder female with recurrent major depressive disorder: Dose-related phenomenon?
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Lin, Hsiang-Yuan;Lin, Chao-Cheng;Liu, Chen-Chung; Lin, Hsiang-Yuan;Lin, Chao-Cheng;Liu, Chen-Chung; 劉震鐘;林朝誠; HSIANG-YUAN LIN; Lin, Hsiang-Yuan; Lin, Chao-Cheng; CHEN-CHUNG LIU; Liu, Chen-Chung |
| 國立交通大學 |
2014-12-12T03:03:12Z |
奈米點應用於先進非揮發性記憶體之製作與特性研究
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林昭正; Lin, Chao-Cheng; 曾俊元; 張鼎張; Tseng, Tseung-Yuen; Chang, Ting-Chang |
| 國立交通大學 |
2014-12-08T15:48:10Z |
Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N(2) and O(2) ambient
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Chen, Min-Chen; Chang, Chun-Yen; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:38:00Z |
Influence of Nanocrystals on Resistive Switching Characteristic in Binary Metal Oxides Memory Devices
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Tsai, Yu-Ting; Chang, Ting-Chang; Lin, Chao-Cheng; Chen, Shih-Cheng; Chen, Chi-Wen; Sze, Simon M.; Yeh (Hung), Fon-Shan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:37:44Z |
Effect of Hydrogen Dilution on the Intrinsic a-Si:H Film of the Heterojunction Silicon-Based Solar Cell
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Hsiao, Jui-Chung; Chen, Chien-Hsun; Lin, Chao-Cheng; Wu, Der-Ching; Yu, Peichen |
| 國立交通大學 |
2014-12-08T15:31:54Z |
Highly textured ZnO:B films grown by low pressure chemical vapor deposition for efficiency enhancement of heterojunction silicon-based solar cells
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Hsiao, Jui-Chung; Chen, Chien-Hsun; Yang, Hung-Jen; Wu, Chien-Liang; Fan, Chia-Ming; Huang, Chien-Fu; Lin, Chao-Cheng; Yu, Peichen; Hwang, Jenn-Chang |
| 國立交通大學 |
2014-12-08T15:27:20Z |
Nitric Acid Oxidized ZrO(2) as the Tunneling Oxide of Cobalt Silicide Nanocrystal Memory Devices
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Yang-Dong; Lin, Chao-Cheng; Chen, Min-Chen; Lin, Jian-Yang; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:23:05Z |
Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory Devices
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Tsai, Yu-Ting; Chang, Ting-Chang; Lin, Chao-Cheng; Chiang, Lan-Shin; Chen, Shih-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:21:04Z |
Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory
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Feng, Li-Wei; Chang, Chun-Yen; Chang, Ting-Chang; Tu, Chun-Hao; Wang, Pai-Syuan; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin; Chen, Shih-Ching; Chen, Shih-Cheng |
| 國立交通大學 |
2014-12-08T15:20:49Z |
Formation and composition of titanium oxinitride nanocrystals synthesized via nitridizing titanium oxide for nonvolatile memory applications
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Feng, Li-Wei; Chang, Chun-Yen; Chang, Ting-Chang; Tu, Chun-Hao; Wang, Pai-Syuan; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin; Chen, Shih-Ching; Chen, Shih-Cheng |
| 國立交通大學 |
2014-12-08T15:15:52Z |
Resistive switching mechanisms of V-doped SrZrO3 memory films
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Lin, Chun-Chieh; Tu, Bing-Chung; Lin, Chao-Cheng; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:12:52Z |
Formation of Mo silicide nanodot memory by rapid thermal annealing dual electron-gun evaporated Mo-Si layer
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Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Chang, Chun-Yen; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:10:32Z |
Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction
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Lin, Chao-Cheng; Chang, Ting-; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:10:28Z |
Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer Structure
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Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Feng, Li-Wen; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:10:28Z |
Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory Devices
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Lee, Sheng-Wei; Chang, Chun-Yen; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:10:19Z |
Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment
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Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:10:01Z |
NiSiGe nanocrystals for nonvolatile memory devices
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Hu, Chih-Wei; Chang, Ting-; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:10:01Z |
Improved reliability of Mo nanocrystal memory with ammonia plasma treatment
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Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:09:47Z |
Cobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memory
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Shueh, Pei-Kun; Lin, Chao-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Min-Chen |
| 國立交通大學 |
2014-12-08T15:08:02Z |
Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi(2) Nanocrystals Nonvolatile Memory
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Yang-Dong; Lin, Chao-Cheng; Chen, Min-Chen; Lin, Jian-Yang; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:07:53Z |
High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO(2) Pellets for the Nonvolatile Memory Device Application
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Huang, Yu-Hao; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Fon-Shan; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:07:23Z |
Charge storage characteristics of high density Mo nanocrystal embedded in silicon oxide and silicon nitride
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Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Shih-Ching; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:06:53Z |
Improvement of resistance switching characteristics in a thin FeO(x) transition layer of TiN/SiO(2)/FeO(x)/FePt structure by rapid annealing
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Feng, Li-Wei; Chang, Chun-Yen; Chang, Yao-Feng; Chang, Ting-Chang; Wang, Shin-Yuan; Chen, Shih-Ching; Lin, Chao-Cheng; Chen, Shih-Cheng; Chiang, Pei-Wei |
| 國立交通大學 |
2014-12-08T15:06:16Z |
Resistive switching properties of SrZrO(3)-based memory films
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Lin, Chun-Chieh; Lin, Chao-Cheng; Tu, Bing-Chung; Yu, Jung-Sheng; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:05:22Z |
Reproducible resistance switching of a relatively thin FeO(x) layer produced by oxidizing the surface of a FePt electrode in a metal-oxide-metal structure
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Feng, Li-Wei; Chang, Yao-Feng; Chang, Chun-Yen; Chang, Ting-Chang; Wang, Shin-Yuan; Chiang, Pei-Wei; Lin, Chao-Cheng; Chen, Shih-Ching; Chen, Shih-Cheng |
Showing items 11-35 of 91 (4 Page(s) Totally)
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