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Institution	Date	Title	Author
國立交通大學	2019-04-02T06:00:28Z	Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO3-Based Memory Films	Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學	2019-04-02T05:59:51Z	High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO3 Memory Devices	Lin, Meng-Han; Wu, Ming-Chi; Huang, Yi-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學	2019-04-02T05:58:57Z	Low-Power and Highly Reliable Multilevel Operation in ZrO2 1T1R RRAM	Wu, Ming-Chi; Lin, Yi-Wei; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學	2019-04-02T05:57:53Z	High-speed and localized resistive switching characteristics of double-layer SrZrO3 memory devices	Lin, Meng-Han; Wu, Ming-Chi; Huang, Chun-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學	2017-04-21T06:56:40Z	Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer Structure	Tsai, Tsung-Ling; Jiang, Fa-Shen; Ho, Chia-Hua; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學	2017-04-21T06:56:16Z	3D resistive RAM cell design for high-density storage class memory-a review	Hudec, Boris; Hsu, Chung-Wei; Wang, I-Ting; Lai, Wei-Li; Chang, Che-Chia; Wang, Taifang; Frohlich, Karol; Ho, Chia-Hua; Lin, Chen-Hsi; Hou, Tuo-Hung
東海大學	2017	營運資金及資本支出對企業經營績效之影響-以臺灣冷凍食品為例	林禎禧; LIN,CHEN-HSI
國立交通大學	2015-07-21T08:31:06Z	3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Current	Hsu, Chung-Wei; Wan, Chia-Chen; Wang, I-Ting; Chen, Mei-Chin; Lo, Chun-Li; Lee, Yao-Jen; Jang, Wen-Yueh; Lin, Chen-Hsi; Hou, Tuo-Hung
國立交通大學	2015-07-21T08:29:39Z	Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memory	Chand, Umesh; Huang, Chun-Yang; Jieng, Jheng-Hong; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學	2015-07-21T08:29:32Z	Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure	Chand, Umesh; Huang, Kuan-Chang; Huang, Chun-Yang; Ho, Chia-Hua; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學	2014-12-08T15:48:37Z	Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO(3)-Based Memory Films	Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學	2014-12-08T15:31:42Z	Improved Resistive Switching Characteristics by Al2O3 Layers Inclusion in HfO2-Based RRAM Devices	Huang, Chun-Yang; Jieng, Jheng-Hong; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學	2014-12-08T15:29:52Z	Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode	Lin, Kuan-Liang; Hou, Tuo-Hung; Lee, Yao-Jen; Chang, Jhe-Wei; Lin, Jun-Hung; Shieh, Jiann; Chou, Cheng-Tung; Lei, Tan-Fu; Chang, Wen-Hsiung; Jang, Wen-Yueh; Lin, Chen-Hsi
國立交通大學	2014-12-08T15:29:05Z	Highly Stable SrZrO3 Bipolar Resistive Switching Memory by Ti Modulation Layer	Wu, Ming-Chi; Lin, Meng-Han; Yeh, Yu-Ting; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學	2014-12-08T15:28:51Z	Low-Power and Highly Reliable Multilevel Operation in ZrO(2) 1T1R RRAM	Wu, Ming-Chi; Lin, Yi-Wei; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學	2014-12-08T15:23:40Z	A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO2/Pt nonvolatile memory with 1T1R architecture	Wu, Ming-Chi; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學	2014-12-08T15:23:20Z	Flexible One Diode-One Resistor Crossbar Resistive-Switching Memory	Huang, Jiun-Jia; Hou, Tuo-Hung; Hsu, Chung-Wei; Tseng, Yi-Ming; Chang, Wen-Hsiung; Jang, Wen-Yueh; Lin, Chen-Hsi
國立交通大學	2014-12-08T15:15:52Z	Resistive switching mechanisms of V-doped SrZrO3 memory films	Lin, Chun-Chieh; Tu, Bing-Chung; Lin, Chao-Cheng; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學	2014-12-08T15:13:00Z	Voltage-polarity-independent and high-speed resistive switching properties of v-doped SrZrO3 thin films	Lin, Chun-Chieh; Lin, Chih-Yang; Lin, Meng-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學	2014-12-08T15:11:49Z	High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO(3) Memory Devices	Lin, Meng-Han; Wu, Ming-Chi; Huang, Yi-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學	2014-12-08T15:10:51Z	Improvement of resistive switching characteristics in SrZrO3 thin films with embedded Cr layer	Lin, Chih-Yang; Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學	2014-12-08T15:06:33Z	High-speed and localized resistive switching characteristics of double-layer SrZrO(3) memory devices	Lin, Meng-Han; Wu, Ming-Chi; Huang, Chun-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學	2014-12-08T15:06:16Z	Resistive switching properties of SrZrO(3)-based memory films	Lin, Chun-Chieh; Lin, Chao-Cheng; Tu, Bing-Chung; Yu, Jung-Sheng; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學	2014-12-08T15:05:13Z	Stable resistive switching behaviors of sputter deposited V-doped SrZrO3 thin films	Lin, Chun-Chieh; Yu, Jung-Sheng; Lin, Chih-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學	2014-12-08T15:05:08Z	Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films	Lin, Chih-Yang; Lin, Chun-Chieh; Huang, Chun-Hsing; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立東華大學	2007-12	Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films	林群傑; Lin, Chun-Chieh; Lin, Chih-Yang ; Huang, Chun-Hsing; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立東華大學	2007-12	Stable resistive switching behaviors of sputter deposited V-doped SrZrO3 thin films	林群傑; Lin, Chun-Chieh; Yu Jung-Sheng ;Lin Chih-Yang ; Lin Chen-Hsi ; Tseng, Tseung-Yuen
國立東華大學	2007-12	Voltage-polarity-independent and high-speed resistive switching properties of V-doped SrZrO3 thin films	林群傑; Lin, Chun-Chieh; Lin, Chih-Yang ; Lin, Meng-Han; Lin,Chen-Hsi ;Tseng, Tseung-Yuen
國立東華大學	2007-04	Resistive switching properties of SrZrO3-based memory films	林群傑; Lin, Chun-Chieh; Lin, Chao-Cheng ;Tu Bing-Chung ; Yu Jung-Sheng ; Lin Chen-Hsi ; Tseng, Tseung-Yuen
國立東華大學	2006-09	Resistive switching mechanisms of V-doped SrZrO3 memory films	林群傑; Lin, Chun-Chieh; Tu, Bing-Chung ;Lin Chao-Cheng ; Lin, Chen-Hsi;Tseng, Tseung-Yuen

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