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Institution Date Title Author
國立交通大學 2014-12-08T15:14:10Z Effect of top electrode material on resistive switching properties of ZrO2 film memory devices Lin, Chih-Yang; Wu, Chen-Yu; Wu, Chung-Yi; Lee, Tzyh-Cheang; Yang, Fu-Liang; Hu, Chenming; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:13:38Z SrTiO3-SiO2 oxide films for possible high-k gate dielectric applications Lin, Chun-Chieh; Lai, Li-Wen; Lin, Chih-Yang; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:13:12Z Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode Lin, Chih-Yang; Wu, Chung-Yi; Wu, Chen-Yu; Tseng, Tseung-Yuen; Hu, Chenming
國立交通大學 2014-12-08T15:13:00Z Voltage-polarity-independent and high-speed resistive switching properties of v-doped SrZrO3 thin films Lin, Chun-Chieh; Lin, Chih-Yang; Lin, Meng-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:12:50Z Electrical properties and fatigue behaviors of ZrO(2) resistive switching thin films Lin, Chih-Yang; Wang, Sheng-Yi; Lee, Dai-Ying; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:10:51Z Improvement of resistive switching characteristics in SrZrO3 thin films with embedded Cr layer Lin, Chih-Yang; Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:10:16Z Constructing Neuronal Structure from 3D Confocal Microscopic Images Lee, Ping-Chang; Chang, Hsiu-Ming; Lin, Chih-Yang; Chiang, Ann-Shyn; Ching, Yu-Tai
國立交通大學 2014-12-08T15:08:44Z Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO(2) memory films Wang, Sheng-Yu; Lee, Dai-Ying; Tseng, Tseung-Yuen; Lin, Chih-Yang
國立交通大學 2014-12-08T15:05:14Z Memory effect of RF sputtered ZrO2 thin films Lin, Chih-Yang; Wu, Chung-Yi; Wu, Chen-Yu; Lin, Chun-Chieh; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:05:13Z Stable resistive switching behaviors of sputter deposited V-doped SrZrO3 thin films Lin, Chun-Chieh; Yu, Jung-Sheng; Lin, Chih-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen

Showing items 86-95 of 179  (18 Page(s) Totally)
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