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Showing items 276-300 of 351 (15 Page(s) Totally)
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Institution	Date	Title	Author
國立臺灣大學	2001	Characteristics of Laser Diodes Influenced by Electron-Dominant Nonuniform Carrier Distribution	Wu, Bing-Ruey; Lin, Ching-Fuh; Laih, Lih-Wen; Shih, Tien-Tsorng
國立臺灣大學	2001	Electroluminescence at Si Bandgap Energy from Metal-Oxide-Semiconductor Tunneling Diodes	Lin, Ching-Fuh; Chen, Miin-Jang; Lee, Ming-Hung; Liu, Cheewee
國立臺灣大學	2001	Extremely broadband superluminescent diodes/semiconductor laser amplifiers using nonidentical InGaAsP quantum wells	Wu, Bing-Ruey; Lin, Ching-Fuh; Laih, Lih-Wen; Shih, Tien-Tsorng
國立臺灣大學	2001	Carrier lifetime measurement on electroluminescent metal–oxide–silicon tunneling diodes	Chen, Miin-Jang; Lin, Ching-Fuh; Lee, M. H.; Chang, S. T.; Liu, C. W.
國立臺灣大學	2001	Enhanced reliability of electroluminescence from metal–oxide–silicon tunneling diodes by deuterium incorporation	Liu, C. W.; Lin, C.-H.; Lee, M. H.; Chang, S. T.; Liu, Y.-H.; Chen, Miin-Jang; Lin, Ching-Fuh
國立臺灣大學	2001	Model for Band-Edge Electroluminescence from Metal-Oxide-Semiconductor Silicon Tunneling Diodes	Chen, Miin-Jang; Liang, Eih-Zhe; Chang, Shu-Wei; Lin, Ching-Fuh
國立臺灣大學	2001	Visible and band edge electroluminescence from indium tin oxide/SiO2/Si metal–oxide–semiconductor structures	Chen, Miin-Jang; Lin, Ching-Fuh; Liu, W. T.; Chang, S. T.; Liu, C. W.
國立臺灣大學	2001	Reduced temperature dependence of luminescence from silicon due to field-induced carrier confinement	Lin, Ching-Fuh; Chen, Miin-Jang; Liang, Eih-Zhe; Liu, W. T.; Liu, C. W.
國立臺灣大學	2001	Electroluminescence at silicon band gap energy from mechanically pressed indium-tin-oxide/Si contact	Lin, Ching-Fuh; Chen, Miin-Jang; Chang, Shu-Wei; Chung, Peng-Fei; Liang, Eih-Zhe; Su, Ting-Wien; Liu, C. W.
國立臺灣大學	2001	Quasi-3-D beam-propagation method for modeling nonlinear wavelength conversion	Mou, Shing; Lin, Ching-Fuh; Chou, Hsu-Feng
國立臺灣大學	2001	Sequence Influence of Nonidentical InGaAsP Quantum Wells on Broadband Characteristics of Semiconductor Optical Amplifiers/ Superluminescent Diodes	Lin, Ching-Fuh; Wu, Bing-Ruey; Laih, Lih-Wen; Shih, Tien-Tsorng
臺大學術典藏	2001	Characteristics of Laser Diodes Influenced by Electron-Dominant Nonuniform Carrier Distribution	Wu, Bing-Ruey; Lin, Ching-Fuh; Laih, Lih-Wen; Shih, Tien-Tsorng; Lin, Ching-Fuh
臺大學術典藏	2001	Electroluminescence at Si Bandgap Energy from Metal-Oxide-Semiconductor Tunneling Diodes	Liu, Cheewee;Lee, Ming-Hung;Chen, Miin-Jang;Lin, Ching-Fuh;Liu, Cheewee;Lee, Ming-Hung;Chen, Miin-Jang;Lin, Ching-Fuh;Liu, Cheewee;Lee, Ming-Hung;Lin, Ching-Fuh;Chen, Miin-Jang; Lin, Ching-Fuh; Chen, Miin-Jang; Lee, Ming-Hung; Liu, Cheewee; Lin, Ching-Fuh; Chen, Miin-Jang; Lee, Ming-Hung; Liu, Cheewee
臺大學術典藏	2001	Carrier lifetime measurement on electroluminescent metal–oxide–silicon tunneling diodes	Chen, Miin-Jang; Lin, Ching-Fuh; Lee, M. H.; Chang, S. T.; Liu, C. W.; Chen, Miin-Jang; Lin, Ching-Fuh; Lee, M. H.; Chang, S. T.; Liu, C. W.
臺大學術典藏	2001	Enhanced reliability of electroluminescence from metal–oxide–silicon tunneling diodes by deuterium incorporation	Liu, C. W.; Lin, C.-H.; Lee, M. H.; Chang, S. T.; Liu, Y.-H.; Chen, Miin-Jang; Lin, Ching-Fuh; Liu, C. W.; Lin, C.-H.; Lee, M. H.; Chang, S. T.; Liu, Y.-H.; Chen, Miin-Jang; Lin, Ching-Fuh; LiuCW; ChenMiinJang; LinChingFuh
臺大學術典藏	2001	Model for Band-Edge Electroluminescence from Metal-Oxide-Semiconductor Silicon Tunneling Diodes	Chen, Miin-Jang; Liang, Eih-Zhe; Chang, Shu-Wei; Lin, Ching-Fuh; Chen, Miin-Jang; Liang, Eih-Zhe; Chang, Shu-Wei; Lin, Ching-Fuh
臺大學術典藏	2001	Visible and band edge electroluminescence from indium tin oxide/SiO2/Si metal–oxide–semiconductor structures	Chen, Miin-Jang; Lin, Ching-Fuh; Liu, W. T.; Chang, S. T.; Liu, C. W.; Chen, Miin-Jang; Lin, Ching-Fuh; Liu, W. T.; Chang, S. T.; Liu, C. W.
臺大學術典藏	2001	Reduced temperature dependence of luminescence from silicon due to field-induced carrier confinement	Lin, Ching-Fuh; Chen, Miin-Jang; Liang, Eih-Zhe; Liu, W. T.; Liu, C. W.; Lin, Ching-Fuh; Chen, Miin-Jang; Liang, Eih-Zhe; Liu, W. T.; Liu, C. W.
臺大學術典藏	2001	Electroluminescence at silicon band gap energy from mechanically pressed indium-tin-oxide/Si contact	Lin, Ching-Fuh; Chen, Miin-Jang; Chang, Shu-Wei; Chung, Peng-Fei; Liang, Eih-Zhe; Su, Ting-Wien; Liu, C. W.; Lin, Ching-Fuh; Chen, Miin-Jang; Chang, Shu-Wei; Chung, Peng-Fei; Liang, Eih-Zhe; Su, Ting-Wien; Liu, C. W.; Lin, Ching-Fuh; Chen, Miin-Jang; Chang, Shu-Wei
臺大學術典藏	2001	Sequence Influence of Nonidentical InGaAsP Quantum Wells on Broadband Characteristics of Semiconductor Optical Amplifiers/ Superluminescent Diodes	Lin, Ching-Fuh; Wu, Bing-Ruey; Laih, Lih-Wen; Shih, Tien-Tsorng; Lin, Ching-Fuh; Wu, Bing-Ruey; Laih, Lih-Wen; Shih, Tien-Tsorng
國立臺灣大學	2000-12	InGaAsP/InP laser diodes/superluminescent diodes with nonidentical quantum wells	Lin, Ching-Fuh; Wu, Bing-Ruey; Laih, Lih-Wen; Shih, Tien-Tsorng
國立臺灣大學	2000-12	Novel electroluminescence from metal-insulator-semiconductor (MIS) structures on Si	Lin, Ching-Fuh; Chen, Miin-Jang; Liang, Eih-Zhe; Liu, W.T.; Chang, S.T.; Liu, C.W.
國立臺灣大學	2000-12	Extremely broadband InGaAsP/InP superluminescent diodes	Wu, Bing-Ruey; Lin, Ching-Fuh; Laih, Lih-Wen; Shih, Tien-Tsorng
國立臺灣大學	2000-09	Novel optical bistability and hysteresis in multiple-quantum-well lasers	Chen, Gary; Lin, Ching-Fuh; Chen, Miin-Jang; Lee, Bor-Lin
國立臺灣大學	2000-09	Metal-oxide-semiconductor light-emitting diodes at Si bandgap energy	Chen, Miin-Jang; Lin, Ching-Fuh; Chiu, Jiann Jong; Liu, Cheewee; Chang, Shu-Wei

Showing items 276-300 of 351 (15 Page(s) Totally)
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View [10|25|50] records per page

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