| 國立臺灣大學 |
2000 |
Room-Temperature Electroluminescence from Metal-Oxide-Silicon-Tunneling Diodes on (110) Substrates
|
Liu, Chee-Wee; Lee, Min-Hung; Chang, Shu-Tong; Chen, Miin-Jang; Lin, Ching-Fuh |
| 國立臺灣大學 |
2000 |
Electroluminescence at Si band gap energy based on metal–oxide–silicon structures
|
Lin, Ching-Fuh; Liu, C. W.; Chen, Miin-Jang; Lee, M. H.; Lin, I. C. |
| 臺大學術典藏 |
2000 |
Short-pulse generation with broad-band tunability fromsemiconductor lasers in an external ring cavity
|
Lee, Bor-Lin; Lin, Ching-Fuh; Lee, Bor-Lin; Lin, Ching-Fuh |
| 臺大學術典藏 |
2000 |
Tunneling Induced Electroluminescence from Metal-Oxide-Semiconductor Structure on Silicon
|
Lin, Ching-Fuh; Liu, Cheewee; Chen, Miin-Jang; Lee, Ming-Hung; Lin, I-Cheng; Lin, Ching-Fuh; Chen, Miin-Jang |
| 國立臺灣大學 |
1999 |
Broadly tunable semiconductor lasers using asymmetric dual quantum wells
|
Lin, Ching-Fuh; Lee, Bor-Lin; Chen, Miin-Jang |
| 國立臺灣大學 |
1999 |
Comparisons of finite difference beam propagation methods for modeling second-order nonlinear effects
|
Chou, Hsu-Feng; Lin, Ching-Fuh; Mou, Shing |
| 臺大學術典藏 |
1999 |
Broadly tunable semiconductor lasers using asymmetric dual quantum wells
|
Lin, Ching-Fuh; Lee, Bor-Lin; Chen, Miin-Jang; Lin, Ching-Fuh; Chen, Miin-Jang |
| 國立臺灣大學 |
1998-06 |
Experimental evidence of nonuniform carrier distribution in multiple-quantum-well laser diodes
|
Lee, Bor-Lin; Lin, Ching-Fuh; Lai, Jie-Wei; Lin, Wei |
| 國立臺灣大學 |
1998-05 |
Improved output beam quality using new-type flared semiconductor laser amplifiers
|
Lin, Ching-Fuh; Lai, Jie-Wei; Chang, Yu-Jia |
| 國立臺灣大學 |
1998-05 |
Nonuniform carrier distribution in multiple quantum well laser diodes
|
Lee, Bor-Lin; Lin, Ching-Fuh |
| 臺大學術典藏 |
1998-05 |
Improved output beam quality using new-type flared semiconductor laser amplifiers
|
Lin, Ching-Fuh; Lai, Jie-Wei; Chang, Yu-Jia; Lin, Ching-Fuh; Lai, Jie-Wei; Chang, Yu-Jia |
| 國立臺灣大學 |
1998 |
Carrier diffusion effect in tapered semiconductor-laser amplifier
|
Lai, Jie-Wei; Lin, Ching-Fuh |
| 國立臺灣大學 |
1998 |
Wide-range tunable semiconductor lasers using asymmetric dualquantum wells
|
Lee, Bor-Lin; Lin, Ching-Fuh |
| 國立臺灣大學 |
1998 |
An iterative finite difference beam propagation method for modeling second-order nonlinear effects in optical waveguides
|
Chou, Hsu-Feng; Lin, Ching-Fuh; Wang, Gin-Chung |
| 國立臺灣大學 |
1998 |
Experimental evidence of nonuniform carrier distribution inmultiple-quantum-well laser diodes
|
Lee, Bor-Lin; Lin, Ching-Fuh; Lai, Jie-Wei; Lin, Wei |
| 國立臺灣大學 |
1998 |
Wide-range tunable dual-wavelength semiconductor laser using asymmetric dual quantum wells
|
Lin, Ching-Fuh; Chen, Miin-Jang; Lee, Bor-Lin |
| 臺大學術典藏 |
1998 |
Wide-range tunable semiconductor lasers using asymmetric dualquantum wells
|
Lee, Bor-Lin; Lin, Ching-Fuh; Lee, Bor-Lin; Lin, Ching-Fuh |
| 臺大學術典藏 |
1998 |
Experimental evidence of nonuniform carrier distribution inmultiple-quantum-well laser diodes
|
Lin, Wei; Lai, Jie-Wei; Lin, Ching-Fuh; Lee, Bor-Lin; Lin, Ching-Fuh; Lai, Jie-Wei; Lin, Wei; Lee, Bor-Lin |
| 國立臺灣大學 |
1997-04 |
Optical switching in two-mode semiconductor lasers via gain or loss modulation
|
Lin, Ching-Fuh; Ku, Pei-Cheng; Hsueh, Yu-Li; Juang, Chaur-Shiuann |
| 國立臺灣大學 |
1997 |
Mode locking of semiconductor lasers in a coupled-cavity configuration with a strongly coupled empty auxiliary cavity
|
Lin, Ching-Fuh |
| 國立臺灣大學 |
1997 |
Extremely broadband AlGaAs/GaAs superluminescent diodes
|
Lin, Ching-Fuh; Lee, Bor-Lin |
| 國立臺灣大學 |
1997 |
Bi-directional switching based on semiconductor laser/amplifier with shallow-etched bending ridge waveguide
|
Lin, Ching-Fuh; Lee, Bor-Lin |
| 國立臺灣大學 |
1997 |
被動式半導體雷射鎖模
|
林清富; Lin, Ching-Fuh |
| 國立臺灣大學 |
1997 |
Theory for passively mode-locked semiconductor lasers including the effects of gain and absorption saturation, saturable absorber recovery time, and chirp
|
Chen, Miin-Jang; Lin, Ching-Fuh |
| 國立臺灣大學 |
1996 |
Broad-band superluminescent diodes fabricated on a substrate with asymmetric dual quantum wells
|
Lin, Ching-Fuh; Lee, Bor-Lin; Lin, Po-Chien |
