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Showing items 1-16 of 16 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:58:42Z |
Impact of barrier layer on HfO2-based conductive bridge random access memory
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Lin, Chun-An; Huang, Chu-Jie; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:38Z |
Resistive Switching Characteristics and Reliability of SiNx-Based Conductive Bridge Random Access Memory
|
Lin, Chun-An; Dai, Guang-Jyun; Tseng, Tseung-Yuen |
| 臺大學術典藏 |
2018-09-10T14:56:28Z |
Method and system for manufacturing semiconductor device
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Hong, Ming-Hwei;Kwo, Ray-Nien;Pi, Tun-Wen;Huang, Mao-Lin;Chang, Yu-Hsing;Chang, Pen;Lin, Chun-An;Lin, Tsung-Da; Hong, Ming-Hwei; Kwo, Ray-Nien; Pi, Tun-Wen; Huang, Mao-Lin; Chang, Yu-Hsing; Chang, Pen; Lin, Chun-An; Lin, Tsung-Da; MINGHWEI HONG |
| 國立交通大學 |
2018-08-21T05:52:48Z |
Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory
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Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tsai, Tsung-Ling; Lin, Chun-An; Tseng, Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:55:13Z |
Impacts of Co doping on ZnO transparent switching memory device characteristics
|
Simanjuntak, Firman Mangasa; Prasad, Om Kumar; Panda, Debashis; Lin, Chun-An; Tsai, Tsung-Ling; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 中山醫學大學 |
2017 |
新移民子女自覺歧視對行為問題之影響：社會支持的修飾作用
|
林俊安; Lin, Chun-An |
| 國立交通大學 |
2015-12-02T02:59:22Z |
Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode
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Simanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:18Z |
Enhanced switching uniformity in AZO/ZnO1-x/ITO transparent resistive memory devices by bipolar double forming
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Simanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-07-21T08:31:27Z |
IMPROVEMENT OF RESISTIVE SWITCHING PROPERTIES OF Ti/ZrO2/Pt WITH EMBEDDED GERMANIUM
|
Lin, Chun-An; Panda, Debashis; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:36:20Z |
Resistive switching characteristics of Pt/CeOx/TiN memory device
|
Ismail, Muhammad; Talib, Ijaz; Huang, Chun-Yang; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Chand, Umesh; Lin, Chun-An; Ahmed, Ejaz; Rana, Anwar Manzoor; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:35:07Z |
Forming-free bipolar resistive switching in nonstoichiometric ceria films
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Ismail, Muhammad; Huang, Chun-Yang; Panda, Debashis; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Lin, Chun-An; Chand, Umesh; Rana, Anwar Manzoor; Ahmed, Ejaz; Talib, Ijaz; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:34:59Z |
Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance
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Huang, Chun-Yang; Huang, Chung-Yu; Tsai, Tsung-Ling; Lin, Chun-An; Tseng, Tseung-Yuen |
| 國立臺中教育大學 |
2011 |
競爭的神話-林純安創作自述
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林純安; Lin, Chun-An |
| 國立臺灣大學 |
2008 |
合成具有特定色散性質的光子晶體平板線型波導
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林俊安; Lin, Chun-An |
| 國立成功大學 |
2004-06-18 |
發光二極體之能帶缺陷對輸出特性影響之研究
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林俊安; Lin, Chun-An |
| 國立成功大學 |
2004-06-18 |
發光二極體之能帶缺陷對輸出特性影響之研究
|
林俊安; Lin, Chun-An |
Showing items 1-16 of 16 (1 Page(s) Totally)
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