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| 國立臺灣師範大學 |
2019-09-03T11:06:19Z |
國民黨政府與黨外運動之拉鋸-以美麗島事件為中心
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林俊杰; Lin, Chun-Chieh |
| 國立臺灣師範大學 |
2019-09-03T11:06:19Z |
國民黨政府與黨外運動之拉鋸-以美麗島事件為中心
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林俊杰; Lin, Chun-Chieh |
| 國立交通大學 |
2019-08-02T02:18:37Z |
ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices
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Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:56Z |
Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices
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Lin, Chih-Yang; Lee, Dai-Ying; Wang, Sheng-Yi; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:56Z |
Reproducible resistive switching behavior in sputtered CeO2 polycrystalline films
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Lin, Chih-Yang; Lee, Dai-Ying; Wang, Sheng-Yi; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:59:47Z |
Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell
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Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:59Z |
Improved resistive switching properties of Ti/ZrO2/Pt memory devices for RRAM application
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Wang, Sheng-Yu; Tsai, Chen-Han; Lee, Dai-Ying; Lin, Chih-Yang; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:54:28Z |
Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell
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Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Pattanayak, Bhaskar; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:52:54Z |
Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell
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Simanjuntak, Firman Mangasa; Singh, Pragya; Chandrasekaran, Sridhar; Lumbantoruan, Franky Juanda; Yang, Chih-Chieh; Huang, Chu-Jie; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立成功大學 |
2017-07-26 |
公司治理評鑑與財務績效及公司價值之關聯性探討：以台灣上市櫃企業公司治理評鑑為例
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林俊傑; Lin, Chun-Chieh |
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