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"lin cm"
Showing items 36-45 of 208 (21 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:46:39Z |
TiSixNy and TiSixOyNz as embedded materials for attenuated phase-shifting mask in 193 nm
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Lin, CM; Loong, WA |
| 國立交通大學 |
2014-12-08T15:46:28Z |
Energy-dispersive x-ray diffraction and Raman scattering of Zn1-xMnxSe bulk crystals at high pressure
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Yang, CS; Ro, CS; Chou, WC; Lin, CM; Chuu, DS; Hu, J; Huang, E; Xu, J |
| 國立交通大學 |
2014-12-08T15:46:12Z |
Raman spectroscopy study of Zn1-xFexSe under high pressure
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Lin, CM; Chuu, DS |
| 國立交通大學 |
2014-12-08T15:45:40Z |
High-pressure phase transitions in Zn0.83Mn0.17Se thin film
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Lin, CM; Chuu, DS |
| 國立交通大學 |
2014-12-08T15:45:15Z |
AlSixNy as an embedded layer for attenuated phase-shifting mask in 193 nm and the utilization of a chemically amplified negative resist NEB-22 for maskmaking
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Loong, WA; Lin, CM |
| 國立交通大學 |
2014-12-08T15:44:44Z |
Correlation between the chemical compositions and optical properties of AlSixNy embedded layer for attenuated phase-shifting mask in 193 nm and the modification of the R-T method for measuring n and k
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Lin, CM; Loong, WA |
| 國立交通大學 |
2014-12-08T15:44:36Z |
AlSixOy as a high-transmittance embedded material of ternary attenuated phase-shifting mask and correlation between chemical composition and optical properties of AlSixOy in 193 nm lithography
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Lin, CM; Loong, WA |
| 國立交通大學 |
2014-12-08T15:43:29Z |
The simulation of application of high transmittance AttPSM for sub-100 nm pattern in 248 nm lithography
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Lin, CM; Loong, WA |
| 國立交通大學 |
2014-12-08T15:43:29Z |
The correlation between the chemical compositions and optical properties of TiSixNy as an embedded layer for AttPSM in 193 nm
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Loong, WA; Lin, CM; Tseng, SP; Yeh, WL |
| 國立交通大學 |
2014-12-08T15:43:28Z |
Pressure-induced phase transitions in bulk Zn1-xMnxSe
|
Lin, CM; Chuu, DS |
Showing items 36-45 of 208 (21 Page(s) Totally)
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