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教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
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"lin ct"的相關文件
顯示項目 166-175 / 419 (共42頁)
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| 國立交通大學 |
2014-12-08T15:04:24Z |
THE PROCESS LIMITATION FOR FORMING TI SILICIDED SHALLOW JUNCTION BY BF(2)+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS AND SUBSEQUENT TI SILICIDATION
|
JUANG, MH; LIN, CT; JAN, ST; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:08Z |
REINFORCEMENT STRUCTURE PARAMETER LEARNING FOR NEURAL-NETWORK-BASED FUZZY-LOGIC CONTROL-SYSTEMS
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LIN, CT; LEE, CSG |
| 國立交通大學 |
2014-12-08T15:03:57Z |
LOW-TEMPERATURE FORMATION OF PALLADIUM SILICIDED SHALLOW P(+)N JUNCTIONS USING IMPLANT THROUGH METAL TECHNOLOGY
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LIN, CT; CHOU, PF; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:52Z |
SHALLOW JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN COSI FILMS AND RAPID THERMAL ANNEALING
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JUANG, MH; LIN, CT; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:48Z |
A SILICIDATION-INDUCED PROCESS CONSIDERATION FOR FORMING SCALE-DOWN SILICIDED JUNCTION
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CHENG, HC; JUANG, MH; LIN, CT; HUANG, LM |
| 國立交通大學 |
2014-12-08T15:03:46Z |
FORMATION OF SHALLOW P(+)N JUNCTIONS BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS
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LIN, CT; JUANG, MH; JAN, ST; CHOU, PF; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:35Z |
SILICIDE-CAUSED ANOMALOUS REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF COSI2 SHALLOW P(+)N JUNCTIONS
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JUANG, MH; LIN, CT; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:30Z |
EFFECTS OF COBALT SILICIDATION ON THE ELECTRICAL CHARACTERISTICS OF SHALLOW P(+)N JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS
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LIN, CT; CHAO, CH; JUANG, MH; JAN, ST; CHOU, PF; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:29Z |
A NEURAL FUZZY CONTROL-SYSTEM WITH STRUCTURE AND PARAMETER LEARNING
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LIN, CT |
| 國立交通大學 |
2014-12-08T15:03:27Z |
A MULTIVALUED BOLTZMANN MACHINE
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LIN, CT; LEE, CSG |
顯示項目 166-175 / 419 (共42頁)
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