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Showing items 11-20 of 31  (4 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:49:23Z Real-time scanning tunneling microscopy observation of Si(100)-(2x1)->(2xn)-> c(4x4) structural phase transitions Lin, DS; Wu, PH
國立交通大學 2014-12-08T15:49:05Z Scanning tunneling microscopy observation of surface reconstruction of Si(100) during chemical vapor deposition from Si2H6 Lin, DS
國立交通大學 2014-12-08T15:46:55Z Influence of sapphire nitridation on properties of indium nitride prepared by metalorganic vapor phase epitaxy Pan, YC; Lee, WH; Shu, CK; Lin, HC; Chiang, CI; Chang, H; Lin, DS; Lee, MC; Chen, WK
國立交通大學 2014-12-08T15:46:45Z Thermal reactions of phosphine with Si(100): a combined photoemission and scanning-tunneling-microscopy study Lin, DS; Ku, TS; Sheu, TJ
國立交通大學 2014-12-08T15:45:16Z Distribution of dangling bond pairs on partially hydrogen-terminated Si(100) surface observed by scanning tunneling microscopy Chen, RP; Lin, DS
國立交通大學 2014-12-08T15:44:24Z Structure study of GaN : Mg films by X-ray absorption near-edge structure spectroscopy Pan, YC; Wang, SF; Lee, WH; Lin, WC; Chiang, CI; Chang, H; Hsieh, HH; Chen, JM; Lin, DS; Lee, MC; Chen, WK; Chen, WH
國立交通大學 2014-12-08T15:44:18Z Gallium K-edge x-ray absorption study on Mg-doped GaN Pan, YC; Wang, SF; Lee, WH; Lee, MC; Chen, WK; Chen, WH; Jang, LY; Lee, JF; Chiang, CI; Chang, H; Wu, KT; Lin, DS
國立交通大學 2014-12-08T15:43:44Z Comparison of thermal reactions of phosphine on Ge(100) and Si(100) by high-resolution core-level photoemission Tsai, HW; Lin, DS
國立交通大學 2014-12-08T15:26:59Z Gallium K-edge EXAFS study of GaN : Mg films Pan, YC; Wang, SF; Lee, WH; Lin, WC; Shu, CK; Chiang, CI; Lin, CH; Chang, H; Lee, JF; Jang, LY; Lin, DS; Lee, MC; Chen, WH; Chen, WK
國立交通大學 2014-12-08T15:25:41Z A 1.8 V, 10 Gbps fully integrated CMOS optical receiver analog front end Chen, WZ; Cheng, YL; Lin, DS

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