|
|
Taiwan Academic Institutional Repository >
Browse by Author
|
"lin e c"
Showing items 81-90 of 138 (14 Page(s) Totally)
<< < 4 5 6 7 8 9 10 11 12 13 > >>
View [10|25|50] records per page
| 臺大學術典藏 |
2018-09-10T04:49:37Z |
Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions
|
Lin, E.-C.; Wu, C.-M.; Yang, C.C.; Yang, J.-R.; Rosenauer, A.; Ma, K.-J.; Shi, S.-C.; Chen, L.C.; Pan, C.-C.; Chyi, J.-I.; Cheng, Y.-C.; Lin, E.-C.; Wu, C.-M.; Yang, C.C.; Yang, J.-R.; Rosenauer, A.; Ma, K.-J.; Shi, S.-C.; Chen, L.C.; Pan, C.-C.; Chyi, J.-I.Cheng, Yung-Chen; Lin, En-Chiang; Wu, Cheng-Ming; Yang, C. C.; Yang, Jer-Ren; Rosenauer,; reas; Ma, Kung-Jen; Shi, Shih-Chen; Chen, L. C.; Pan, Chang-Chi; Chyi, Jen-Inn; CHIH-CHUNG YANG; Yang, Jer-Ren |
| 臺大學術典藏 |
2018-09-10T04:29:31Z |
A microstructure study of post-growth thermally annealed InGaN/GaN quantum well structures of various well widths
|
Lin, Y.-S.; Ma, K.-J.; Chung, Y.-Y.; Feng, S.-W.; Cheng, Y.-C.; Lin, E.-C.; Yang, C.C.; Kuo, C.-T.; Tsang, J.-S.; CHIH-CHUNG YANG |
| 臺大學術典藏 |
2018-09-10T04:29:30Z |
Dependencies of optical and material properties on nominal indium content and well width in InGaN/GaN quantum well structures
|
Teng, C.-C.; Lin, S.-C.; Lin, E.-C.; Chen, M.-K.; Wu, C.-M.; Chen, J.-Y.; Cheng, Y.-C.; Feng, S.-W.; Yang, C.C.; Ma, K.-J.; Kuo, C.-T.; Tsang, J.-S.; Tang, T.-Y.; CHIH-CHUNG YANG et al. |
| 臺大學術典藏 |
2018-09-10T04:29:29Z |
Femtosecond pump-probe studies on carrier dynamics in InGaN/GaN quantum wells with indium aggregated quantum dot structures
|
Wang, H.-C.; Tsai, C.-Y.; Cheng, Y.-C.; Lin, E.-C.; Feng, S.-W.; Yang, C.C.; Ma, K.-J.; Kuo, C.T.; Tsang, J.-S.; CHIH-CHUNG YANG |
| 臺大學術典藏 |
2018-09-10T04:29:28Z |
Mechanisms for photon-emission enhancement with silicon doping in InGaN/GaN quantum-well structures
|
Chyi, J.-I.; CHIH-CHUNG YANG; Cheng, Y.-C.; Tseng, C.-H.; Hsu, C.; Ma, K.-J.; Feng, S.-W.; Lin, E.-C.; Yang, C.C. |
| 臺大學術典藏 |
2018-09-10T04:29:28Z |
Indium aggregated quantum dot structures in InGaN compounds
|
Feng, S.-W.; Cheng, Y.-C.; Chung, Y.-Y.; Lin, E.-C.; Wang, H.-C.; Tang, T.-Y.; Deng, C.-C.; Lin, S.-J.; Ma, K.-J.; Lin, Y.-S.; Yang, C.C.; CHIH-CHUNG YANGet al. |
| 臺大學術典藏 |
2018-09-10T04:29:26Z |
Quantum-well-width dependencies of postgrowth thermal annealing effects of InGaN/GaN quantum wells
|
Lin, Y.-S.; Feng, S.-W.; Cheng, Y.-C.; Lin, E.-C.; Yang, C.C.; Ma, K.-J.; Hsu, C.; Chuang, H.-W.; Kuo, C.-T.; Tsang, J.-S.; Chung, Y.-Y.; CHIH-CHUNG YANGet al. |
| 臺大學術典藏 |
2018-09-10T04:29:26Z |
Quantum dot structures and their optical properties of a high-indium InGaN film
|
Lin, E.-C.; Cheng, Y.-C.; Wang, H.-C.; Yang, C.C.; Ma, K.-J.; Shen, C.-H.; Chen, L.C.; Kim, K.H.; Lin, J.Y.; Jiang, H.X.; Feng, S.-W.; CHIH-CHUNG YANGet al. |
| 臺大學術典藏 |
2018-09-10T04:29:25Z |
Thermal annealing effects on the optical properties of high-indium InGaN epi-layers
|
Cheng, Y.-C.; Lin, E.-C.; Wang, H.-C.; Yang, C.C.; Ma, K.-J.; Shen, C.-H.; Chen, L.C.; Kim, K.H.; Lin, J.Y.; Jiang, H.X.; Feng, S.-W.; CHIH-CHUNG YANGet al. |
| 臺大學術典藏 |
2018-09-10T04:29:25Z |
Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31
|
Lin, E.-C.; Tang, T.-Y.; Cheng, Y.-C.; Wang, H.-C.; Yang, C.C.; Ma, K.-J.; Shen, C.-H.; Chen, L.C.; Kim, K.H.; Lin, J.Y.; Jiang, H.X.; Feng, S.-W.; CHIH-CHUNG YANGet al. |
Showing items 81-90 of 138 (14 Page(s) Totally)
<< < 4 5 6 7 8 9 10 11 12 13 > >>
View [10|25|50] records per page
|
