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Showing items 31-40 of 97  (10 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:38:46Z Harmonic injection-locking behavior of frequency-detuned optical pulse in erbium-doped fiber laser Lin, GR; Liao, YS; Wu, JR
國立交通大學 2014-12-08T15:38:46Z Optical-pulse-injection-iniduced 40 GHz photonic frequency multiplication in erbium-doped fiber laser Lin, GR; Lin, GC; Wu, JR
國立交通大學 2014-12-08T15:38:42Z Defect-enhanced photoconductive response of silicon-implanted borosilicate glass Lin, GR; Lin, CJ; Lin, CK
國立交通大學 2014-12-08T15:38:42Z Pumping intensity dependent surface charge accumulation and redshifted microphotoluminescence of silicon-implanted quartz Lin, GR; Yu, KC; Lin, CJ; Kuo, HC; Ou-Yang, MC
國立交通大學 2014-12-08T15:38:32Z Time-resolved photoluminescence and capacitance-voltage analysis of the neutral vacancy defect in silicon implanted SiO2 on silicon substrate Lin, GR; Lin, CJ; Yu, KC
國立交通大學 2014-12-08T15:38:31Z All-optical NRZ-to-PRZ format transformer with an injection-locked Fabry-Perot laser diode at unlasing condition Chang, YC; Lin, YH; Chen, JH; Lin, GR
國立交通大學 2014-12-08T15:37:27Z Defect-enhanced photoconductive response of silicon-implanted borosilicate glass (vol 85, pg 935, 2004) Lin, GR; Lin, CJ; Lin, CK
國立交通大學 2014-12-08T15:37:06Z Synthesis of silicon nanocrystals in silicon-rich SiO2 by rapid CO2 laser annealing Lin, CJ; Lin, GR; Chueh, YL; Chou, LJ
國立交通大學 2014-12-08T15:27:15Z Arsenic-implanted GaAs: An alternative material to low-temperature-grown GaAs for ultrafast optoelectronic applications Pan, CL; Lin, GR
國立交通大學 2014-12-08T15:26:58Z Multi-energy arsenic-ion-implanted GaAs photoconductors for ultrafast switching and THz Generation Pan, CL; Liu, TA; Lin, GR; Tani, M

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