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Showing items 471-520 of 1111 (23 Page(s) Totally) << < 5 6 7 8 9 10 11 12 13 14 > >> View [10|25|50] records per page
| 臺大學術典藏 |
2020-06-11T06:39:49Z |
Indium and nitrogen K-edge X-ray absorption spectroscopy of In x Ga 1-x N
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Li, X.;Chang, C.M.;Hsueh, C.-H.;Lee, Z.-F.;Chen, J.-M.;Lin, H.-H.;Wang, X.;Dietz, N.;Guan, Y.-J.;Feng, Z.C.; Li, X.; Chang, C.M.; Hsueh, C.-H.; Lee, Z.-F.; Chen, J.-M.; Lin, H.-H.; Wang, X.; Dietz, N.; Guan, Y.-J.; Feng, Z.C.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:49Z |
Structure of GaAsN alloy within miscibility gap
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Wu, H.-M.;Lin, K.-I.;Lin, H.-H.; Wu, H.-M.; Lin, K.-I.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:49Z |
X-ray absorption fine structure of ZnO thin film on Si and sapphire grown by MOCVD
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Xin, J.;Chang, C.M.;Hsueh, C.-H.;Lee, J.-F.;Chen, J.-M.;Lin, H.-H.;Lu, N.;Ferguson, I.T.;Guan, Y.;Wan, L.;Yang, Q.;Feng, Z.C.; Xin, J.; Chang, C.M.; Hsueh, C.-H.; Lee, J.-F.; Chen, J.-M.; Lin, H.-H.; Lu, N.; Ferguson, I.T.; Guan, Y.; Wan, L.; Yang, Q.; Feng, Z.C.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:48Z |
All-optical switching in a GaAs microdisk resonator
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Lin, Y.-C.;Mao, M.-H.;Lin, Y.-R.;Lin, H.-H.;Lin, C.-A.;Wang, L.A.; Lin, Y.-C.; Mao, M.-H.; Lin, Y.-R.; Lin, H.-H.; Lin, C.-A.; Wang, L.A.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:48Z |
Raman scattering in InP 1-x Sb x alloys grown on InAs substrate by gas source MBE
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Chang, C.-M.;Tsai, C.-Y.;Lin, H.-H.; Chang, C.-M.; Tsai, C.-Y.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:47Z |
Direct Measurement of the Potential Spike Energy in AlGaAs/GaAs Single-Heterojunction Binolar Transistors
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Lin, H.-H.;Lee, S.-C.; Lin, H.-H.; Lee, S.-C.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:47Z |
Effects of conduction band discontinuity and two dimensional electron gas on the DC characteristics of InAlAs/InGaAs and InAlAs/InAlGaAs DHBT's
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Huang, C.-H.;Lee, T.-L.;Lin, H.-H.; Huang, C.-H.; Lee, T.-L.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:47Z |
Gas source MBE growth of InP under in-rich conditions
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Lee, T.-L.;Liu, J.-S.;Lin, H.-H.; Lee, T.-L.; Liu, J.-S.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:46Z |
Anisotropic Two-Photon Transitions in GaAs/AlGaAs Multiple Quantum Well Waveguides
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Yang, C.C.;Villeneuve, A.;Stegeman, G.I.;Lin, C.-H.;Lin, H.-H.; Yang, C.C.; Villeneuve, A.; Stegeman, G.I.; Lin, C.-H.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:46Z |
Birefringence of Passive Multi-Quantum-Well Semiconductor Slab Waveguides
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Yang, C.C.;Kang, J.;Stegeman, G.I.;Huang, C.-H.;Li, D.-U.;Lin, H.-H.;Chang, H.-C.; Yang, C.C.; Kang, J.; Stegeman, G.I.; Huang, C.-H.; Li, D.-U.; Lin, H.-H.; Chang, H.-C.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:46Z |
P-N Double Quantum Well Resonant Interband Tunneling Diode with Peak-to-Valley Current Ratio of 144 at Room Temperature
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Tsai, H.H.;Su, Y.K.;Wang, R.L.;Lin, H.H.;Lee, T.L.; Tsai, H.H.; Su, Y.K.; Wang, R.L.; Lin, H.H.; Lee, T.L.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:45Z |
Injection Current Model of a MOS Diode under Charge-Sharing Mode Readout Operation
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Wu, C.-W.;Lin, H.-H.; Wu, C.-W.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:45Z |
Y-Junction and Misaligned-Stripe Diode Laser Arrays with Nonuniform Reflective Diffraction Coupler
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Lay, T.-S.;Lee, S.-C.;Lin, H.-H.; Lay, T.-S.; Lee, S.-C.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:44Z |
An AIGaAs/GaAs oxide-stripe double-heterostructure laser
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Shieh, M.-H.;Lin, H.-H.;Lee, S.-C.;Chiou, Y.-L.; Shieh, M.-H.; Lin, H.-H.; Lee, S.-C.; Chiou, Y.-L.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:44Z |
AIGaAs/GaAs V-groove channeled substrate buried heterostructure laser diodes
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Chen, J.-A.;Lee, S.-C.;Lin, H.-H.; Chen, J.-A.; Lee, S.-C.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:44Z |
Determination of augai-xas bandgap by schottky barrier spectral response measurement
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Lin, H.-H.;Lee, S.-C.; Lin, H.-H.; Lee, S.-C.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:43Z |
Ge auto-doping and out-diffusion in InGaP grown on Ge substrate and their effects on the ordering of InGaP
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Wu, H.-M.;Tsai, S.-J.;Ho, H.-I.;Lin, H.-H.; Wu, H.-M.; Tsai, S.-J.; Ho, H.-I.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:43Z |
Structural and electronic properties of GaAs0.64P 0.19Sb0.17 on GaAs
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Chin, Y.-C.;Chen, J.-Y.;Chen, B.-H.;Tsai, H.-S.;Huang, Y.-S.;Lin, H.-H.; Chin, Y.-C.; Chen, J.-Y.; Chen, B.-H.; Tsai, H.-S.; Huang, Y.-S.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:43Z |
Origin of high offset voltage in an AlGaAs/GaAs heterojunction bipolar transistor
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Lee, S.-C.;Kau, J.-N.;Lin, H.-H.; Lee, S.-C.; Kau, J.-N.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:43Z |
Characteristics of Si-doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source
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HAO-HSIUNG LIN; Liu, C.-W.;Chen, S.-L.;Lay, J.-P.;Lee, S.-C.;Lin, H.-H.; Liu, C.-W.; Chen, S.-L.; Lay, J.-P.; Lee, S.-C.; Lin, H.-H. |
| 臺大學術典藏 |
2020-06-11T06:39:42Z |
Optical characterization of GaAs 0.7Sb 0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot layer composite structures
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Wu, J.D.;Lin, Y.J.;Huang, Y.S.;Lin, Y.R.;Lin, H.H.; Wu, J.D.; Lin, Y.J.; Huang, Y.S.; Lin, Y.R.; Lin, H.H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:40Z |
Single and multiple AlGaAs quantum-well structures grown by liquid-phase epitaxy
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Chen, J.-A.;Wang, C.-K.;Lin, H.-H.;Wang, W.-S.;Lee, S.-C.; Chen, J.-A.; Wang, C.-K.; Lin, H.-H.; Wang, W.-S.; Lee, S.-C.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:40Z |
Studies of low-surface 2-kT recombination current of the emitter-base heterojunction of heterojunction bipolar transistors
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Wu, C.-C.;Ting, J.-L.;Lee, S.-C.;Lin, H.-H.; Wu, C.-C.; Ting, J.-L.; Lee, S.-C.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:40Z |
Abrupt heterointerfaces in Al0.35Ga0.65As/Al 0.05Ga0.95As/Al0.35Ga0.65As quantum well structure grown by liquid-phase epitaxy
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Chen, J.-A.;Lee, J.-H.;Lee, S.-C.;Lin, H.-H.; Chen, J.-A.; Lee, J.-H.; Lee, S.-C.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:40Z |
Design of n-p-n AlGaAs double-heterojunction bipolar transistors
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Chen, C.-Z.;Lee, S.-C.;Lin, H.-H.; Chen, C.-Z.; Lee, S.-C.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:39Z |
Current transport across the emitter-base potential spike in AlGaAs/GaAs heterojunction bipolar transistors
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Lee, S.-C.;Kau, J.-N.;Lin, H.-H.; Lee, S.-C.; Kau, J.-N.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:39Z |
Transport theory of the double heterojunction bipolar transistor based on current balancing concept
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Lee, S.-C.;Lin, H.-H.; Lee, S.-C.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:38Z |
Study of InAlAs/InGaAs heterojunction bipolar transistor layers by optically detected cyclotron resonance
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Chen, Y.F.;Shen, J.L.;Dai, Y.D.;Jan, G.J.;Lin, H.H.; Chen, Y.F.; Shen, J.L.; Dai, Y.D.; Jan, G.J.; Lin, H.H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:38Z |
Dependence of electron effective mass on alloy composition of InAlGaAs lattice matched to InP studied by optically detected cyclotron resonance
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Chen, Y.F.;Dai, Y.T.;Fan, J.C.;Lee, T.L.;Lin, H.H.; Chen, Y.F.; Dai, Y.T.; Fan, J.C.; Lee, T.L.; Lin, H.H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:38Z |
Erratum: Study of InAlAs/InGaAs heterojunction bipolar transistor layers by optically detected cyclotron resonance" (Applied Physics Letters (1995) 66 (2543))
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Chen, Y.F.;Shen, J.L.;Dai, Y.D.;Jan, G.J.;Lin, H.H.; Chen, Y.F.; Shen, J.L.; Dai, Y.D.; Jan, G.J.; Lin, H.H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:37Z |
Photoreflectance characterization of an InAlAs/InGaAs heterostructure bipolar transistor
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Hsu, K.T.; Chen, Y.H.; Chen, K.L.; Chen, H.P.; Lin, H.H.; Jan, G.J.; HAO-HSIUNG LIN; Hsu, K.T.;Chen, Y.H.;Chen, K.L.;Chen, H.P.;Lin, H.H.;Jan, G.J. |
| 臺大學術典藏 |
2020-06-11T06:39:37Z |
Nonlinear refractive-index and two photon-absorption near half the band gap in AlGaAs
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Villeneuve, A.;Yang, C.C.;Stegeman, G.I.;Lin, C.-H.;Lin, H.-H.; Villeneuve, A.; Yang, C.C.; Stegeman, G.I.; Lin, C.-H.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:37Z |
Measurements of two-photon absorption coefficient and induced nonlinear refractive-index in GaAs/AlGaAs multiquantum well waveguides
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Yang, C.C.;Villeneuve, A.;Stegeman, G.I.;Lin, C.-H.;Lin, H.-H.; Yang, C.C.; Villeneuve, A.; Stegeman, G.I.; Lin, C.-H.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:36Z |
Influence of tunneling barrier width on the forward current characteristics of InAs-based microwave p-n diode
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Yang, C.C.;Su, Y.K.;Lin, H.H.; Yang, C.C.; Su, Y.K.; Lin, H.H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:35Z |
Optical and structural characteristics of Bridgman grown cubic Zn1-xMnxTe alloys
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Talwar, D.N.;Becla, P.;Lin, H.-H.;Feng, Z.C.; Talwar, D.N.; Becla, P.; Lin, H.-H.; Feng, Z.C.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:35Z |
First attempt to identify site occupation preference coefficients of a quaternary alloy: The InAsxPySb1-x-y system
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Robouch, B.V.;Lin, H.-H.;Valeev, R.G.;Trigub, A.L.;Omar, J.;Kisiel, A.;Marcelli, A.; Robouch, B.V.; Lin, H.-H.; Valeev, R.G.; Trigub, A.L.; Omar, J.; Kisiel, A.; Marcelli, A.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:34Z |
The incorporation behavior of As and P in GaInAsP (λ ? μm) on InP grown by gas source molecular beam epitaxy
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Lee, T.-L.;Liu, J.-S.;Lin, H.-H.; Lee, T.-L.; Liu, J.-S.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:34Z |
Surface/structural characteristics and band alignments of thin Ga 2 O 3 films grown on sapphire by pulse laser deposition
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Yang, H.;Qian, Y.;Zhang, C.;Wuu, D.-S.;Talwar, D.N.;Lin, H.-H.;Lee, J.-F.;Wan, L.;He, K.;Feng, Z.C.; Yang, H.; Qian, Y.; Zhang, C.; Wuu, D.-S.; Talwar, D.N.; Lin, H.-H.; Lee, J.-F.; Wan, L.; He, K.; Feng, Z.C.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:34Z |
An AlGaAs-GaAs dual-wavelength photodetector with 500 ? resolution
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Lee, S.C.;Lin, H.H.;Chiou, Y.L.; Lee, S.C.; Lin, H.H.; Chiou, Y.L.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:33Z |
A novel coplanar waveguide series stub matching structure for a broadband amplifier
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Chiou, H.?K.;Chang, C.?Y.;Lin, H.?H.; Chiou, H.?K.; Chang, C.?Y.; Lin, H.?H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:32Z |
Short range structure of dilute nitride GaAsSbN
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Lin, H.-H.;Chiou, C.-L.;Lin, Y.-T.;Ma, T.-C.;Wu, J.-S.;Feng, Z.-C.; Lin, H.-H.; Chiou, C.-L.; Lin, Y.-T.; Ma, T.-C.; Wu, J.-S.; Feng, Z.-C.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:34:49Z |
A 13.56 MHz 88.7%-PCE Voltage Doubling Rectifier Using Adaptive Delay Time and Pulse-Width Control
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Luo, Y.-S.;Lin, H.-H.;Liu, S.-I.; Luo, Y.-S.; Lin, H.-H.; Liu, S.-I.; SHEN-IUAN LIU |
| 臺大學術典藏 |
2020-06-11T06:27:02Z |
A CMOS-based poly-silicon sub-micron wire biosensor for multiple biomarker detections in clinical samples
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Wang, I.-S.;Lee, J.-K.;Lin, H.-H.;Sun, Y.-H.;Chen, G.-Y.;Lin, C.-T.; Wang, I.-S.; Lee, J.-K.; Lin, H.-H.; Sun, Y.-H.; Chen, G.-Y.; Lin, C.-T.; CHIH-TING LIN |
| 臺大學術典藏 |
2020-06-11T06:23:10Z |
Direct Measurement of the Potential Spike Energy in AlGaAs/GaAs Single-Heterojunction Binolar Transistors
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Lin, H.-H.;Lee, S.-C.; Lin, H.-H.; Lee, S.-C.; SI-CHEN LEE |
| 臺大學術典藏 |
2020-06-11T06:23:08Z |
Origin of high offset voltage in an AlGaAs/GaAs heterojunction bipolar transistor
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Lee, S.-C.;Kau, J.-N.;Lin, H.-H.; Lee, S.-C.; Kau, J.-N.; Lin, H.-H.; SI-CHEN LEE |
| 臺大學術典藏 |
2020-06-11T06:23:08Z |
Characteristics of Si-doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source
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Liu, C.-W.;Chen, S.-L.;Lay, J.-P.;Lee, S.-C.;Lin, H.-H.; Liu, C.-W.; Chen, S.-L.; Lay, J.-P.; Lee, S.-C.; Lin, H.-H.; SI-CHEN LEE |
| 臺大學術典藏 |
2020-06-11T06:23:03Z |
Studies of low-surface 2-kT recombination current of the emitter-base heterojunction of heterojunction bipolar transistors
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Wu, C.-C.;Ting, J.-L.;Lee, S.-C.;Lin, H.-H.; Wu, C.-C.; Ting, J.-L.; Lee, S.-C.; Lin, H.-H.; SI-CHEN LEE |
| 臺大學術典藏 |
2020-06-11T06:23:03Z |
Single and multiple AlGaAs quantum-well structures grown by liquid-phase epitaxy
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SI-CHEN LEE; Wang, W.-S.; Lee, S.-C.; Lin, H.-H.; Wang, C.-K.; Chen, J.-A.; Chen, J.-A.;Wang, C.-K.;Lin, H.-H.;Wang, W.-S.;Lee, S.-C. |
| 臺大學術典藏 |
2020-06-11T06:23:02Z |
Abrupt heterointerfaces in Al 0.35 Ga 0.65 As/Al 0.05 Ga 0.95 As/Al 0.35 Ga 0.65 As quantum well structure grown by liquid-phase epitaxy
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Chen, J.-A.;Lee, J.-H.;Lee, S.-C.;Lin, H.-H.; Chen, J.-A.; Lee, J.-H.; Lee, S.-C.; Lin, H.-H.; SI-CHEN LEE |
| 臺大學術典藏 |
2020-06-11T06:23:02Z |
Design of n-p-n AlGaAs double-heterojunction bipolar transistors
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Chen, C.-Z.;Lee, S.-C.;Lin, H.-H.; Chen, C.-Z.; Lee, S.-C.; Lin, H.-H.; SI-CHEN LEE |
Showing items 471-520 of 1111 (23 Page(s) Totally) << < 5 6 7 8 9 10 11 12 13 14 > >> View [10|25|50] records per page
|