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Showing items 486-495 of 1111 (112 Page(s) Totally)
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| 臺大學術典藏 |
2020-06-11T06:39:44Z |
Determination of augai-xas bandgap by schottky barrier spectral response measurement
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Lin, H.-H.;Lee, S.-C.; Lin, H.-H.; Lee, S.-C.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:43Z |
Ge auto-doping and out-diffusion in InGaP grown on Ge substrate and their effects on the ordering of InGaP
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Wu, H.-M.;Tsai, S.-J.;Ho, H.-I.;Lin, H.-H.; Wu, H.-M.; Tsai, S.-J.; Ho, H.-I.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:43Z |
Structural and electronic properties of GaAs0.64P 0.19Sb0.17 on GaAs
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Chin, Y.-C.;Chen, J.-Y.;Chen, B.-H.;Tsai, H.-S.;Huang, Y.-S.;Lin, H.-H.; Chin, Y.-C.; Chen, J.-Y.; Chen, B.-H.; Tsai, H.-S.; Huang, Y.-S.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:43Z |
Origin of high offset voltage in an AlGaAs/GaAs heterojunction bipolar transistor
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Lee, S.-C.;Kau, J.-N.;Lin, H.-H.; Lee, S.-C.; Kau, J.-N.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:43Z |
Characteristics of Si-doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source
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HAO-HSIUNG LIN; Liu, C.-W.;Chen, S.-L.;Lay, J.-P.;Lee, S.-C.;Lin, H.-H.; Liu, C.-W.; Chen, S.-L.; Lay, J.-P.; Lee, S.-C.; Lin, H.-H. |
| 臺大學術典藏 |
2020-06-11T06:39:42Z |
Optical characterization of GaAs 0.7Sb 0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot layer composite structures
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Wu, J.D.;Lin, Y.J.;Huang, Y.S.;Lin, Y.R.;Lin, H.H.; Wu, J.D.; Lin, Y.J.; Huang, Y.S.; Lin, Y.R.; Lin, H.H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:40Z |
Single and multiple AlGaAs quantum-well structures grown by liquid-phase epitaxy
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Chen, J.-A.;Wang, C.-K.;Lin, H.-H.;Wang, W.-S.;Lee, S.-C.; Chen, J.-A.; Wang, C.-K.; Lin, H.-H.; Wang, W.-S.; Lee, S.-C.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:40Z |
Studies of low-surface 2-kT recombination current of the emitter-base heterojunction of heterojunction bipolar transistors
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Wu, C.-C.;Ting, J.-L.;Lee, S.-C.;Lin, H.-H.; Wu, C.-C.; Ting, J.-L.; Lee, S.-C.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:40Z |
Abrupt heterointerfaces in Al0.35Ga0.65As/Al 0.05Ga0.95As/Al0.35Ga0.65As quantum well structure grown by liquid-phase epitaxy
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Chen, J.-A.;Lee, J.-H.;Lee, S.-C.;Lin, H.-H.; Chen, J.-A.; Lee, J.-H.; Lee, S.-C.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:40Z |
Design of n-p-n AlGaAs double-heterojunction bipolar transistors
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Chen, C.-Z.;Lee, S.-C.;Lin, H.-H.; Chen, C.-Z.; Lee, S.-C.; Lin, H.-H.; HAO-HSIUNG LIN |
Showing items 486-495 of 1111 (112 Page(s) Totally)
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