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"lin h y"的相關文件
顯示項目 561-570 / 1024 (共103頁)
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| 臺大學術典藏 |
2019-12-27T07:49:23Z |
Growth mechanism of atomic layer deposited Al2O3on GaAs(001)-4 ? 6 surface with trimethylaluminum and water as precursors
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Huang, M.L.; Chang, Y.H.; Lin, T.D.; Lin, H.Y.; Liu, Y.T.; Pi, T.W.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:23Z |
Effective passivation of In 0.2Ga 0.8As by HfO 2 surpassing Al 2O 3 via in-situ atomic layer deposition
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Liu, Y.T.; Chiang, T.H.; Lin, H.Y.; Huang, M.L.; Lin, T.D.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG; Lin, C.A.; Chang, Y.H.; Chang, Y.H.;Lin, C.A.;Liu, Y.T.;Chiang, T.H.;Lin, H.Y.;Huang, M.L.;Lin, T.D.;Pi, T.W.;Kwo, J.;Hong, M. |
| 臺大學術典藏 |
2019-12-27T07:49:21Z |
Surface passivation of GaSb(100) using molecular beam epitaxy of Y2O3 and atomic layer deposition of Al2O3: A comparative study
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Chu, R.-L.;Hsueh, W.-J.;Chiang, T.-H.;Lee, W.-C.;Lin, H.-Y.;Lin, T.-D.;Brown, G.J.;Chyi, J.-I.;Huang, T.S.;Pi, T.-W.;Kwo, J.R.;Hong, M.; Chu, R.-L.; Hsueh, W.-J.; Chiang, T.-H.; Lee, W.-C.; Lin, H.-Y.; Lin, T.-D.; Brown, G.J.; Chyi, J.-I.; Huang, T.S.; Pi, T.-W.; Kwo, J.R.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:21Z |
Interfacial electronic structure of trimethyl-aluminum and water on an In0.20Ga0.80As(001)-4 ? 2 surface: A high-resolution core-level photoemission study
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Pi, T.W.;Lin, H.Y.;Chiang, T.H.;Liu, Y.T.;Wertheim, G.K.;Kwo, J.;Hong, M.; Pi, T.W.; Lin, H.Y.; Chiang, T.H.; Liu, Y.T.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:21Z |
Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs (001)-4 ? 6 and As-rich GaAs(001)-2 ? 4 surfaces: A synchrotron radiation photoemission study
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Pi, T.-W.;Lin, H.-Y.;Liu, Y.-T.;Lin, T.-D.;Wertheim, G.K.;Kwo, J.;Hong, M.; Pi, T.-W.; Lin, H.-Y.; Liu, Y.-T.; Lin, T.-D.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:20Z |
Synchrotron radiation photoemission study of interfacial electronic structure of HfO2 on In0.53Ga0.47As(001)-4 ? 2 from atomic layer deposition
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Pi, T.W.;Lin, T.D.;Lin, H.Y.;Chang, Y.C.;Wertheim, G.K.;Kwo, J.;Hong, M.; Pi, T.W.; Lin, T.D.; Lin, H.Y.; Chang, Y.C.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:17Z |
Demonstration of large field effect in topological insulator films via a high-庥 back gate
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Wang, C.Y.;Lin, H.Y.;Yang, S.R.;Chen, K.H.M.;Lin, Y.H.;Chen, K.H.;Young, L.B.;Cheng, C.K.;Fanchiang, Y.T.;Tseng, S.C.;Hong, M.;Kwo, J.; Wang, C.Y.; Lin, H.Y.; Yang, S.R.; Chen, K.H.M.; Lin, Y.H.; Chen, K.H.; Young, L.B.; Cheng, C.K.; Fanchiang, Y.T.; Tseng, S.C.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Van der Waals epitaxy of topological insulator Bi2Se3 on single layer transition metal dichalcogenide MoS2
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Chen, K.H.M.; Lin, H.Y.; Yang, S.R.; Cheng, C.K.; Zhang, X.Q.; Cheng, C.M.; Lee, S.F.; Hsu, C.H.; Lee, Y.H.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:11Z |
Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum
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MINGHWEI HONG; Hong, M.; Cheng, C.P.; Pi, T.W.; Kwo, J.; Lin, K.Y.;Wan, H.W.;Chen, K.H.M.;Fanchiang, Y.T.;Chen, W.S.;Lin, Y.H.;Cheng, Y.T.;Chen, C.C.;Lin, H.Y.;Young, L.B.;Cheng, C.P.;Pi, T.W.;Kwo, J.;Hong, M.; Lin, K.Y.; Wan, H.W.; Chen, K.H.M.; Fanchiang, Y.T.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Chen, C.C.; Lin, H.Y.; Young, L.B. |
| 臺大學術典藏 |
2019-12-27T07:48:38Z |
Formation of multilayer two-dimensional Pb Islands on Si(111)7x7 at low temperature: From nucleation to growth
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Su, W. B.;Chang, S. H.;Lin, H. Y.;Chiu, Y. P.;Fu, T. Y.;Chang, C. S.;Tsong, T. T.; Su, W. B.; Chang, S. H.; Lin, H. Y.; Chiu, Y. P.; Fu, T. Y.; Chang, C. S.; Tsong, T. T.; YA-PING CHIU |
顯示項目 561-570 / 1024 (共103頁)
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