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"lin hao hsiung"
Showing items 1-25 of 306 (13 Page(s) Totally)
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| 臺大學術典藏 |
May-03 |
Effect of deposition method on the density of InAs/InGaAs quantum dot
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Chang, Fu-Yu;Wu, T.C.;Lin, Hao-Hsiung; Chang, Fu-Yu; Wu, T.C.; Lin, Hao-Hsiung; Lin, Hao-Hsiung |
| 臺大學術典藏 |
May-02 |
Band gap reduction in InAsN alloy
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Chu, Tso-Yu; Lin, Hao-Hsiung; Shih, Ding-Kang; Chu, Tso-Yu; Lin, Hao-Hsiung; Shih, Ding-Kang |
| 臺大學術典藏 |
May-01 |
Bulk InAsN films grown by plasma-assisted gas source molecular beam epitaxy
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Shih, Ding-Kang; Lin, Hao-Hsiung; Song, Li-Wei; Chu, Tso-Yu; Yang, T.R.; Shih, Ding-Kang; Lin, Hao-Hsiung; Song, Li-Wei; Chu, Tso-Yu; Yang, T.R. |
| 臺大學術典藏 |
Jun-04 |
InAs/InGaAs quantum dot laser with high ground-state modal gain grown by solid-source molecular-beam epitaxy
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Chang, Fu-Yu; Lee, Chi-Sen; Liao, Gang-Hua; Lin, Hao-Hsiung; Chang, Fu-Yu; Lee, Chi-Sen; Liao, Gang-Hua; Lin, Hao-Hsiung |
| 臺大學術典藏 |
Dec-01 |
A fully integrated broadband amplifier with 161% 3-dB bandwidth
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Wu, Wen-Chieh; Wang, Huei; Lin, Hao-Hsiung; Wu, Wen-Chieh; Wang, Huei; Lin, Hao-Hsiung |
| 臺大學術典藏 |
2020-06-11T06:39:37Z |
A New Analytic Formula for Minority Carrier Decay Length Extraction from Scanning Photocurrent Profiles in Ohmic-Contact Nanowire Devices
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Chu, Cheng-Hao;Mao, Ming-Hua;Yang, Che-Wei;Lin, Hao-Hsiung; Chu, Cheng-Hao; Mao, Ming-Hua; Yang, Che-Wei; Lin, Hao-Hsiung; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:35Z |
Evolution of the local structure and crystal phase for thin ZnGaO films grown by metal organic chemical vapor deposition
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HAO-HSIUNG LIN; Lin, Xiwen;Chen, Daihua;Niu, Wenlong;Huang, Chiung-Yi;Horng, Ray Hua;Cheng, Li-Chung;Talwar, Devki N.;Lin, Hao Hsiung;Lee, Jyh-Fu;Feng, Zhe Chuan;Wan, Lingyu; Lin, Xiwen; Chen, Daihua; Niu, Wenlong; Huang, Chiung-Yi; Horng, Ray Hua; Cheng, Li-Chung; Talwar, Devki N.; Lin, Hao Hsiung; Lee, Jyh-Fu; Feng, Zhe Chuan; Wan, Lingyu |
| 臺大學術典藏 |
2020-06-11T06:39:33Z |
Phonon characteristics of Si-doped InAs grown by gas-source molecular beam epitaxy
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Talwar, Devki N.;Lin, Hao-Hsiung;Feng, Zhe Chuan; Talwar, Devki N.; Lin, Hao-Hsiung; Feng, Zhe Chuan; HAO-HSIUNG LIN |
| 國立交通大學 |
2019-08-02T02:18:37Z |
Evolution of the local structure and crystal phase for thin ZnGaO films grown by metal organic chemical vapor deposition
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Lin, Xiwen; Chen, Daihua; Niu, Wenlong; Huang, Chiung-Yi; Horng, Ray Hua; Cheng, Li-Chung; Talwar, Devki N.; Lin, Hao Hsiung; Lee, Jyh-Fu; Feng, Zhe Chuan; Wan, Lingyu |
| 臺大學術典藏 |
2018-09-10T07:41:11Z |
Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy
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Wang, Jyh-Shyang; Lin, Hao-Hsiung; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:07:59Z |
Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy
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Hsu, Hung-Pin;Huang, Yen-Neng;Huang, Ying-Sheng;Lin, Yang-Ting;Ma, Ta-Chun;Lin, Hao-Hsiung;Tiong, Kwong-Kau;Sitarek, Piotr;Misiewicz, Jan; Hsu, Hung-Pin; Huang, Yen-Neng; Huang, Ying-Sheng; Lin, Yang-Ting; Ma, Ta-Chun; Lin, Hao-Hsiung; Tiong, Kwong-Kau; Sitarek, Piotr; Misiewicz, Jan; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:07:59Z |
Photoluminescence of InAs0.04P0.67Sb0.29
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Tsai, Gene; Wang, De-Lun; Lin, Hao-Hsiung; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:07:58Z |
Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers
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Chen, Cheng-Yuan; Lee, Jia-Ren; Lu, Chien-Rong; Liu, Hsiang-Lin; Sun, Li-Wen; Lin, Hao-Hsiung; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:44Z |
The dependence of terahertz radiation on the built-in electric field in semiconductor microstructures
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Hwang, Jenn-Shyong; Lin, Hui-Ching; Chang, Chin-Kuo; Wang, Tai-Shen; Chang, Liang-Son; Chyi, Jen-Inn; Liu, Wei-Sheng; Chen, Shu-Han; Lin, Hao-Hsiung; Liu, Po-Wei; HAO-HSIUNG LIN; Hwang, Jenn-Shyong; Lin, Hui-Ching; Chang, Chin-Kuo; Wang, Tai-Shen; Chang, Liang-Son; Chyi, Jen-Inn; Liu, Wei-Sheng; Chen, Shu-Han; Lin, Hao-Hsiung; Liu, Po-Wei |
| 臺大學術典藏 |
2018-09-10T04:58:48Z |
Shrinkable triple self-aligned field-enhanced split-gate flash memory
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Chu, Wen-Ting; Lin, Hao-Hsiung; Hsieh, Chia-Ta; Sung, Hung-Cheng; Wang, Yu-Hsiung; Lin, Yung-Tao; Wang, C.S.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:47Z |
High SCR design for one-transistor split-gate full-featured EEPROM
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Chu, Wen-Ting; Lin, Hao-Hsiung; Wang, Yu-Hsiung; Hsieh, Chia-Ta; Sung, Hung-Cheng; Lin, Yung-Tao; Wang, C.S.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:47Z |
Using an ammonia treatment to improve the floating-gate spacing in split-gate flash memory
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Chu, Wen-Ting; Lin, Hao-Hsiung; Tu, Yeur-Luen; Wang, Yu-Hsiung; Hsieh, Chia-Ta; Sung, Hung-Cheng; Lin, Yung-Tao; Tsai, Chia-Shiung; Wang, C.S.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:32:33Z |
Femtosecond carrier dynamics in InGaAsN single quantum well
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Sun, C.-K.; Sung, L.-W.; Lin, H.-H.; Sun, Chi-Kuang; Lin, Hao-Hsiung; Hsieh, C.-L.; Liu, T.-M.; Tien, M.-C. |
| 臺大學術典藏 |
2018-09-10T04:14:55Z |
Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxy
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Liu, Po-Wei; Lee, Ming-Han; Lin, Hao-Hsiung; Chen, Jhe-Ren; Lin, Hao-Hsiung |
| 臺大學術典藏 |
2018-09-10T03:50:01Z |
Multiple quantum wells and laser structures containing InAs quantum dots grown by molecular-beam epitaxy
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Wu, Cheng-Zu; Wang, Pai-Yong; Guo, Xing-Jian; Wu, Yi-Tsuo; Liang, Chiu-Yueh; Hwang, Fei-Chang; Jiang, Wen-Chang; Lay, Ferng-Jye; Sung, Li-Wei; Lin, Hao-Hsiung; Chang, Chin-An; HAO-HSIUNG LINet al. |
| 臺大學術典藏 |
2018-07-06T15:10:38Z |
Measurements of Two-Photon Absorption Coefficient and Induced Nonlinear Refractive-Index in GaAs/AlGaAs Multiquantum Well Waveguide
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Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Lin, Hao-Hsiung |
| 臺大學術典藏 |
2018-07-06T10:06:01Z |
Fabrication and Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors (HJBT's) Using a New Emitter-Edge-Thinning Design
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Ting, Jing-Lung; Lin, Hao-Hsiung; Lee, Si-Chen; Ting, Jing-Lung; 林浩雄; 李嗣涔; Ting, Jing-Lung; Lin, Hao-Hsiung; Lee, Si-Chen |
| 國立交通大學 |
2014-12-13T10:40:14Z |
OEIC用高速元件之研究
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林浩雄; LIN HAO-HSIUNG |
| 國立交通大學 |
2014-12-13T10:40:12Z |
砷化銦鎵砷化鎵應變壓電效應之研究
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林浩雄; LIN HAO-HSIUNG |
| 國立成功大學 |
2013-12 |
Double-Band Anticrossing in GaAsSbN Induced by Nitrogen and Antimony Incorporation
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Lin, Kuang-I; Lin, Kuo-Lung; Wang, Bo-Wei; Lin, Hao-Hsiung; Hwang, Jenn-Shyong |
Showing items 1-25 of 306 (13 Page(s) Totally)
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