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Showing items 161-185 of 306 (13 Page(s) Totally)
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Institution	Date	Title	Author
國立臺灣大學	1993	Effects of Two-Photon Transition on Femtosecond Pulse Propagation in Multiple Quantum Well Waveguides	Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung
國立臺灣大學	1993	Investigations of InGaAs/InAlAs Double-Barrier Resonant Tunneling Diode	Tu, C. H.; Chen, J. G.; Huang, Chang-Hsiu; 林浩雄; Tu, C. H.; Chen, J. G.; Huang, Chang-Hsiu; Lin, Hao-Hsiung
國立臺灣大學	1993	On the Fabrication of In0.52Al0.48As/In0.53Ga0.47As Monolithic Photoreceiver	Yang, T. F.; Tu, C. H.; Lee, T. L.; 林浩雄; Tu, Y. K.; Yang, T. F.; Tu, C. H.; Lee, T. L.; Lin, Hao-Hsiung; Tu, Y. K.
國立臺灣大學	1993	On the High Frequency Properties of InGaAs Bipolar Transistors	Lin, C. H.; Lee, T. L.; Huang, Chang-Hsiu; 林浩雄; Lin, C. H.; Lee, T. L.; Huang, Chang-Hsiu; Lin, Hao-Hsiung
國立臺灣大學	1993	Optical Nonlinarities Near Half the Band Gap in Semiconductors and Their Applications	Yang, C. C.; Villencuve, A.; Wigley, P. G.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Yang, C. C.; Villencuve, A.; Wigley, P. G.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung
國立臺灣大學	1993	Proximity Contact Effect on the DC Characteristics of InGaAs-Based Bipolar Transistors	Huang, Chang-Hsiu; Lin, C. H.; 林浩雄; Huang, Chang-Hsiu; Lin, C. H.; Lin, Hao-Hsiung
國立臺灣大學	1993	Studies of Two-Photon Transition Nonlinearities Near Half the Band Gap in Semiconductor Based on AlGaAs for Nonlinear Switching	Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung
國立臺灣大學	1993	Two-Dimensional Calculation on the Band-to-Band Tunneling Current of Indium Antimonide Charge Injection Devices	Wu, C. W.; 林浩雄; Wu, C. W.; Lin, Hao-Hsiung
國立臺灣大學	1993	Ultrafast All-Optical Polarization Switching Near Half the Band Gap in Semiconductors	Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung
國立臺灣大學	1993	High current gain AlGaAs/GaAs heterojunction bipolar transistor grown by molecular beam epitaxy	Huang, Chen-Chih; Lin, Hao-Hsiung
國立臺灣大學	1993	Effect of two-dimensional electron gas on the d.c. characteristics of InAlAs/InGaAs double heterojunction bipolar transistors	Huang, Chao-Hsing; Lin, Hao-Hsiung
臺大學術典藏	1993	AlGaAs/GaAs Heterojunction Bipolar Transistor on GaAs(111) Substrate by Molecular Beam Epitaxy	Lee, T. L.; Chu, W. D.; Lin, Hao-Hsiung; Lee, T. L.; Chu, W. D.; 林浩雄; Lin, Hao-Hsiung
臺大學術典藏	1993	Anisotropic Two-Photon Absorption Coefficient and Induced Nonlinear Refractive-Index in GaAs/AlGaAs Multiple Quantum Well Waveguide	Stegeman, G. I.; Lin, C. H.; Yang, C. C.; Villeneuve, A.; Lin, C. H.; Lin, Hao-Hsiung; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Yang, C. C.; Villeneuve, A.; Lin, C. H.; Lin, Hao-Hsiung
臺大學術典藏	1993	Dark Current Analysis of InSB MIS Capacitors	Wu, C. W.; Lin, Hao-Hsiung; Wu, C. W.; 林浩雄; Lin, Hao-Hsiung
臺大學術典藏	1993	DC Characteristics of In0.52Al0.48As/in0.53Ga0.47As/in0.53(AlxGa1-X) 0.47As Double Heterojunction Bipolar Transitors	Lin, Hao-Hsiung; 林浩雄; Lee, T. L.; Huang, Chang-Hsiu; Lee, T. L.; Lin, Hao-Hsiung; Huang, Chang-Hsiu
臺大學術典藏	1993	Effects of Two-Photon Transition on Femtosecond Pulse Propagation in Multiple Quantum Well Waveguides	Lin, Hao-Hsiung; Stegeman, G. I.; Lin, C. H.; Yang, C. C.; Villeneuve, A.; Lin, Hao-Hsiung; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Yang, C. C.; Villeneuve, A.
臺大學術典藏	1993	On the Fabrication of In0.52Al0.48As/In0.53Ga0.47As Monolithic Photoreceiver	Yang, T. F.; Tu, C. H.; Lee, T. L.; Tu, Y. K.; Lin, Hao-Hsiung; Yang, T. F.; Tu, C. H.; Lee, T. L.; 林浩雄; Tu, Y. K.; Tu, C. H.; Lin, Hao-Hsiung
臺大學術典藏	1993	On the High Frequency Properties of InGaAs Bipolar Transistors	Lee, T. L.; Huang, Chang-Hsiu; Lin, C. H.; Lin, Hao-Hsiung; Lin, C. H.; Lee, T. L.; Huang, Chang-Hsiu; 林浩雄; Lin, C. H.; Lin, Hao-Hsiung
臺大學術典藏	1993	Optical Nonlinarities Near Half the Band Gap in Semiconductors and Their Applications	Yang, C. C.; Villencuve, A.; Wigley, P. G.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung; Yang, C. C.; Villencuve, A.; Wigley, P. G.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Wigley, P. G.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung
臺大學術典藏	1993	Proximity Contact Effect on the DC Characteristics of InGaAs-Based Bipolar Transistors	Lin, C. H.; Huang, Chang-Hsiu; Lin, Hao-Hsiung; Huang, Chang-Hsiu; Lin, C. H.; 林浩雄; Huang, Chang-Hsiu; Lin, Hao-Hsiung
臺大學術典藏	1993	Studies of Two-Photon Transition Nonlinearities Near Half the Band Gap in Semiconductor Based on AlGaAs for Nonlinear Switching	Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung
臺大學術典藏	1993	Two-Dimensional Calculation on the Band-to-Band Tunneling Current of Indium Antimonide Charge Injection Devices	Wu, C. W.; Lin, Hao-Hsiung; Wu, C. W.; 林浩雄; Lin, Hao-Hsiung
臺大學術典藏	1993	Ultrafast All-Optical Polarization Switching Near Half the Band Gap in Semiconductors	Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung
臺大學術典藏	1993	Effect of a Two-Dimensional Electron Gas on the DC Characteristics of InAlAs/InGaAs Double Heterojunction Bipolar Transistors	Huang, Chang-Hsiu; Lin, Hao-Hsiung; Huang, Chang-Hsiu; 林浩雄; Lin, Hao-Hsiung
臺大學術典藏	1993	Effect of Supersaturation on the Interface Abruptness of AlGaAs/GaAs/AlGaAs Quantum Well Grown by Liquid Phase Epitaxy	Chen, M. K.; Chang, T. C.; Lin, Hao-Hsiung; Chen, M. K.; Chang, T. C.; 林浩雄; Chang, T. C.; Lin, Hao-Hsiung

Showing items 161-185 of 306 (13 Page(s) Totally)
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View [10|25|50] records per page

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