| 臺大學術典藏 |
2001-12 |
(AlxGa1 x)0:5In0:5P/In0:15Ga0:85As (x = 0; 0:3; 1:0) Heterostructure Doped-Channel FETs for Microwave Power Applications
|
Yang, Shih-Cheng; Chiu, Hsien-Chin; Chan, Yi-Jen; Lin, Hao-Hsiung; Kuo, Jenn-Ming; Yang, Shih-Cheng; Chiu, Hsien-Chin; Chan, Yi-Jen; Lin, Hao-Hsiung; Kuo, Jenn-Ming |
| 國立臺灣大學 |
2001-05 |
Bulk InAsN films grown by plasma-assisted gas source molecular beam epitaxy
|
Shih, Ding-Kang; Lin, Hao-Hsiung; Song, Li-Wei; Chu, Tso-Yu; Yang, T.R. |
| 國立臺灣大學 |
2001 |
Multiple quantum wells and laser structures containing InAs quantum dots grown by molecular-beam epitaxy
|
Chang, Chin-An; Wu, Cheng-Zu; Wang, Pai-Yong; Guo, Xing-Jian; Wu, Yi-Tsuo; Liang, Chiu-Yueh; Hwang, Fei-Chang; Jiang, Wen-Chang; Lay, Ferng-Jye; Sung, Li-Wei; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2001 |
Blueshift of photoluminescence peak in ten periods InAs quantum dots superlattice
|
Lin, Ray-Ming; Lee, Si-Chen; Lin, Hao-Hsiung; Dai, Yuan-Tung; Chen, Yang-Fang |
| 國立臺灣大學 |
2001 |
Optical properties of as-grown and annealed InAs(N)/InGaAsP strained multiple quantum wells
|
Chen, Guan-Ru; Lin, Hao-Hsiung; Wang, Jyh-Shyang; Shih, Ding-Kang |
| 國立臺灣大學 |
2001 |
InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength λ=2.38 μm
|
Shih, Ding-Kang; Lin, Hao-Hsiung; Lin, Y.H. |
| 國立臺灣大學 |
2001 |
Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy
|
Wang, Jyh-Shyang; Lin, Hao-Hsiung; Song, Li-Wei; Chen, Guan-Ru |
| 臺大學術典藏 |
2001 |
Optical properties of as-grown and annealed InAs(N)/InGaAsP strained multiple quantum wells
|
Chen, Guan-Ru; Lin, Hao-Hsiung; Wang, Jyh-Shyang; Shih, Ding-Kang; Chen, Guan-Ru; Lin, Hao-Hsiung; Wang, Jyh-Shyang; Shih, Ding-Kang |
| 臺大學術典藏 |
2001 |
InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength λ=2.38 μm
|
Shih, Ding-Kang; Lin, Hao-Hsiung; Lin, Y.H.; Shih, Ding-Kang; Lin, Hao-Hsiung; Lin, Y.H. |
| 臺大學術典藏 |
2001 |
Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy
|
Wang, Jyh-Shyang; Lin, Hao-Hsiung; Song, Li-Wei; Chen, Guan-Ru; Wang, Jyh-Shyang; Lin, Hao-Hsiung; Song, Li-Wei; Chen, Guan-Ru |
| 國立臺灣大學 |
2000-05 |
Growth and characterization of InAsN alloys
|
Wang, Jyh-Shyang; Lin, Hao-Hsiung; Sung, Li-Wei; Chen, Guan-Ru |
| 臺大學術典藏 |
2000-05 |
Growth and characterization of InAsN alloys
|
Wang, Jyh-Shyang; Lin, Hao-Hsiung; Sung, Li-Wei; Chen, Guan-Ru; Wang, Jyh-Shyang; Lin, Hao-Hsiung; Sung, Li-Wei; Chen, Guan-Ru |
| 國立臺灣大學 |
2000 |
GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer
|
Lee, Ching-Ting; Shyu, Kuo-Chuan; Lin, Iang-Jeng; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1999 |
Structural and optical properties of 0.98 μm InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy
|
Liu, Jin-Shung; Wang, Jyh-Shyang; Hsieh, K. Y.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1999 |
Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopy
|
Tsen, K. T.; Ferry, D. K.; Wang, Jye-Shyang; Huang, Chao-Hsiung; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1999 |
Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy
|
Wang, Jyh-Shyang; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1999 |
Structural and optical properties of 0.98 μm InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy
|
Liu, Jin-Shung; Wang, Jyh-Shyang; Hsieh, K. Y.; Lin, Hao-Hsiung; Liu, Jin-Shung; Wang, Jyh-Shyang; Hsieh, K. Y.; Lin, Hao-Hsiung |
| 國立成功大學 |
1998 |
An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor
|
Tsai, Jung-Hui; Cheng, Shiou-Ying; Laih, Lih-Wen; Liu, Wen-Chau; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1998 |
An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor
|
Tsai, Jung-Hui; Cheng, Shiou-Ying; Laih, Lih-Wen; Liu, Wen-Chau; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1998 |
Self-organized InAs/GaAs quantum dots grown on (1 0 0) misoriented substrates by molecular beam epitaxy
|
Chen, Ming-Chin; Liao, M. C.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1998 |
Very thin layers of TlP grown on InP using gas source molecular beam epitaxy
|
Liu, Jin-Shung; Wang, Jyh-Shyang; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1998 |
Very thin layers of TlP grown on InP using gas source molecular beam epitaxy
|
Liu, Jin-Shung; Wang, Jyh-Shyang; Lin, Hao-Hsiung; Liu, Jin-Shung; Wang, Jyh-Shyang; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1997-09 |
Photoluminescence study of the self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy
|
Chen, Ming-Chin; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1997-09 |
Photoluminescence study of the self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy
|
Chen, Ming-Chin; Lin, Hao-Hsiung; Chen, Ming-Chin; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1997-08 |
A Miniature MMIC Double Doubly Balanced Mixer Using Lumped Dual Balun for High Dynamic Receiver Application
|
Chiou, Hwann-Kaeo; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1997-08 |
Lumped-Element Compensated High/Low-Pass Balun Design for MMIC Double-Balanced Mixer
|
Chiou, Wann-Kaeo; Lin, Hao-Hsiung; Chang, Chi-Yang |
| 臺大學術典藏 |
1997-08 |
A Miniature MMIC Double Doubly Balanced Mixer Using Lumped Dual Balun for High Dynamic Receiver Application
|
Chiou, Hwann-Kaeo; Lin, Hao-Hsiung; Chiou, Hwann-Kaeo; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1997-08 |
Lumped-Element Compensated High/Low-Pass Balun Design for MMIC Double-Balanced Mixer
|
Chiou, Wann-Kaeo; Lin, Hao-Hsiung; Chang, Chi-Yang; Chiou, Wann-Kaeo; Lin, Hao-Hsiung; Chang, Chi-Yang |
| 國立臺灣大學 |
1997-03 |
Miniature MMIC star double balanced mixer using lumped dual balun
|
Chiou, Hwann-Kaeo; Juang, Yu-Ru; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1997 |
Pump-probe studies of carrier capture processes in semiconductor multiple-quantum-well waveguides
|
Huang, Jian-Jang; Huang, Ding-Wei; Chao, Chung-Yen; Li, Jiun-Haw; Yang, C.C.; Chen, Ming-Ching; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1996-04 |
An unified GSMBE growth model for GaInAsP on InP and GaAs
|
Liu, Jin-Shung; Lee, Tsuen-Lin; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1996-04 |
An unified GSMBE growth model for GaInAsP on InP and GaAs
|
Liu, Jin-Shung; Lee, Tsuen-Lin; Lin, Hao-Hsiung; Liu, Jin-Shung; Lee, Tsuen-Lin; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1996 |
Growth and characterization of AlGaAs/GaAs heterojunction bipolar transistor on GaAs (111)B substrate by molecular beam epitaxy
|
Lee, Tsuen-Lin; Chu, Wen-Ding; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1996 |
Low frequency noise characteristics of AlInAs/InGaAs heterojunction bipolar transistors
|
Jang, Sheng-Lyang; Chen, Way-Ming; Lin, Hao-Hsiung; Huang, Chao-Hsing |
| 國立臺灣大學 |
1996 |
On the recombination currents effect of heterostructure-emitter bipolar transistors (HEBTs)
|
Tsai, Jung-Hui; Laih, Lih-Wen; Shih, Hui-Jung; Liu, Wen-Chau; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1996 |
半導體光電現象及應用整合計畫:子計畫三磷砷化銦鎵光電材料及元件之研究
|
林浩雄; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1995-11 |
Balun design for uniplanar broad band double balanced mixer
|
Chiou, Hwann-Kaeo; Chang, Chi-Yang; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1995-11 |
Balun design for uniplanar broad band double balanced mixer
|
Chiou, Hwann-Kaeo; Chang, Chi-Yang; Lin, Hao-Hsiung; Chiou, Hwann-Kaeo; Chang, Chi-Yang; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1995-05 |
The incorporation behavior of As and P in GaInAsP(λ=1.3μm) on InP grown by gas source molecular beam epitaxy
|
Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1995-05 |
The incorporation behavior of As and P in GaInAsP(λ=1.3μm) on InP grown by gas source molecular beam epitaxy
|
Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung; Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1995 |
Gas Source MBE Growth of InP Under In-Rich Conditions
|
Lee, T. L.; Liu, J. S.; 林浩雄; Lee, T. L.; Liu, J. S.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1995 |
The Incorporation Behavior of As and P in GaInAsP(λ -1.3μm) on InP Grown by Gas Source Molecular Beam Epitaxy
|
Lee, T. L.; Liu, J. S.; 林浩雄; Lee, T. L.; Liu, J. S.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1995 |
Relation between the collector current and the two-dimensional electron gas stored in the base-collector heterojunction notch of InAlAs/InGaAs/InAlGaAs DHBTs
|
Huang, Chao-Hsing; Lee, Tsuen-Lin; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1995 |
The incorporation behavior of As and P in GaInAsP (λ ? μm) on InP grown by gas source molecular beam epitaxy
|
Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1995 |
Gas Source MBE Growth of InP Under In-Rich Conditions
|
Lin, Hao-Hsiung; Lee, T. L.; Liu, J. S.; Lee, T. L.; Liu, J. S.; 林浩雄; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1995 |
The Incorporation Behavior of As and P in GaInAsP(λ -1.3μm) on InP Grown by Gas Source Molecular Beam Epitaxy
|
Lee, T. L.; Lin, Hao-Hsiung; Liu, J. S.; Lee, T. L.; Liu, J. S.; 林浩雄; Lee, T. L.; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1995 |
Relation between the collector current and the two-dimensional electron gas stored in the base-collector heterojunction notch of InAlAs/InGaAs/InAlGaAs DHBTs
|
Huang, Chao-Hsing; Lee, Tsuen-Lin; Lin, Hao-Hsiung; Huang, Chao-Hsing; Lee, Tsuen-Lin; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1995 |
The incorporation behavior of As and P in GaInAsP (λ ? μm) on InP grown by gas source molecular beam epitaxy
|
Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung; Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1994-01 |
Photoreflectance Characterization of an InAlAs/InGaAs Heterojunction Bipolar Transistor
|
Hsu, K. T.; Chen, Y. H.; Chen, K. L.; Chen, H. P.; Lin, Hao-Hsiung; Chang, Chien-Cheng |
| 國立臺灣大學 |
1994 |
OEIC用高速元件之研究
|
林浩雄; Lin, Hao-Hsiung |
