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机构 日期 题名 作者
國立臺灣大學 1995 Gas Source MBE Growth of InP Under In-Rich Conditions Lee, T. L.; Liu, J. S.; 林浩雄; Lee, T. L.; Liu, J. S.; Lin, Hao-Hsiung
國立臺灣大學 1995 The Incorporation Behavior of As and P in GaInAsP(λ -1.3μm) on InP Grown by Gas Source Molecular Beam Epitaxy Lee, T. L.; Liu, J. S.; 林浩雄; Lee, T. L.; Liu, J. S.; Lin, Hao-Hsiung
國立臺灣大學 1995 Relation between the collector current and the two-dimensional electron gas stored in the base-collector heterojunction notch of InAlAs/InGaAs/InAlGaAs DHBTs Huang, Chao-Hsing; Lee, Tsuen-Lin; Lin, Hao-Hsiung
國立臺灣大學 1995 The incorporation behavior of As and P in GaInAsP (λ ? μm) on InP grown by gas source molecular beam epitaxy Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung
臺大學術典藏 1995 Gas Source MBE Growth of InP Under In-Rich Conditions Lin, Hao-Hsiung; Lee, T. L.; Liu, J. S.; Lee, T. L.; Liu, J. S.; 林浩雄; Lin, Hao-Hsiung
臺大學術典藏 1995 The Incorporation Behavior of As and P in GaInAsP(λ -1.3μm) on InP Grown by Gas Source Molecular Beam Epitaxy Lee, T. L.; Lin, Hao-Hsiung; Liu, J. S.; Lee, T. L.; Liu, J. S.; 林浩雄; Lee, T. L.; Lin, Hao-Hsiung
臺大學術典藏 1995 Relation between the collector current and the two-dimensional electron gas stored in the base-collector heterojunction notch of InAlAs/InGaAs/InAlGaAs DHBTs Huang, Chao-Hsing; Lee, Tsuen-Lin; Lin, Hao-Hsiung; Huang, Chao-Hsing; Lee, Tsuen-Lin; Lin, Hao-Hsiung
臺大學術典藏 1995 The incorporation behavior of As and P in GaInAsP (λ ? μm) on InP grown by gas source molecular beam epitaxy Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung; Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung
國立臺灣大學 1994-01 Photoreflectance Characterization of an InAlAs/InGaAs Heterojunction Bipolar Transistor Hsu, K. T.; Chen, Y. H.; Chen, K. L.; Chen, H. P.; Lin, Hao-Hsiung; Chang, Chien-Cheng
國立臺灣大學 1994 OEIC用高速元件之研究 林浩雄; Lin, Hao-Hsiung

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