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"lin hao hsiung"的相关文件
Showing items 146-155 of 306 (31 Page(s) Totally)
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| 國立臺灣大學 |
1993 |
砷化鋁鎵異質接面雙極電晶體積體化技術之研究:重點研究群子計劃之二
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林浩雄; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1993 |
Stress-Induced Outdiffusion of Be in P+ GaAs Prepared by Molecular Beam Epitaxy
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Liu, B. D.; Shieh, T. H.; Wu, Ming-Yen; Chang, T. C.; 李嗣涔; 林浩雄; Liu, B. D.; Shieh, T. H.; Wu, Ming-Yen; Chang, T. C.; Lee, Si-Chen; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1993 |
Effect of a Two-Dimensional Electron Gas on the DC Characteristics of InAlAs/InGaAs Double Heterojunction Bipolar Transistors
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Huang, Chang-Hsiu; 林浩雄; Huang, Chang-Hsiu; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1993 |
Effect of Supersaturation on the Interface Abruptness of AlGaAs/GaAs/AlGaAs Quantum Well Grown by Liquid Phase Epitaxy
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Chen, M. K.; Chang, T. C.; 林浩雄; Chen, M. K.; Chang, T. C.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1993 |
Effects of Dispersive Two-Photon Transitions on Femtosecond Pulse Propagation in Semiconductor Waveguides
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Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1993 |
Injection Current Model of a MOS Diode Under Charge Sharing Mode Readou Operation
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Wu, C. W.; 林浩雄; Wu, C. W.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1993 |
Measurements of Two-Photon Absorption Coefficient and Induced Nonlinear Refractive-Index in GaAs/AlGaAs Multiquantum Well Waveguide
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Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1993 |
Nonlinear Polarization Switching Near Half the Band Gap in Semiconductors
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Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Chiou, I. P; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung; Chiou, I. P |
| 國立臺灣大學 |
1993 |
Nonlinear Refractive-Index Near Half the Band Gap in AlGaAs
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Villeneuve, A.; Yang, C. C.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Villeneuve, A.; Yang, C. C.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1993 |
Two-Phase Liquid Phase Epitaxy of Growing In0.53Ga0.47As on InP
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Chen, M. K.; 林浩雄; Chen, M. K.; Lin, Hao-Hsiung |
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