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"lin hao hsiung"的相关文件
显示项目 26-75 / 306 (共7页) 1 2 3 4 5 6 7 > >> 每页显示[10|25|50]项目
| 國立臺灣大學 |
2010 |
Effect of thermal annealing on the blue shift of energy gap and nitrogen rearrangement in GaAsSbN
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Lin, Yan-Ting; Ma, Ta-Chun; Lin, Hao-Hsiung; Wu, Jiun-De; Huang, Ying-Sheng |
| 國立成功大學 |
2009-03-16 |
GaAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer
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Lin, You-Ru; Lai, Yi-Feng; Liu, Chuan-Pu; Lin, Hao-Hsiung |
| 臺大學術典藏 |
2009-02-04T21:31:20Z |
The Transport Mechanism for Base Current in an AlGaAs/GaAs Heterojunction Bipolar Transistor
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Lin, Hao-Hsiung;Lee, Si-Chen; Lee, Si-Chen; Lin, Hao-Hsiung |
| 臺大學術典藏 |
2009-02-04T19:26:22Z |
Evalution of DX-Center in Sn-Doped AlxGa1-xAs
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Hwang, F. C.;Lee, H. C.;Lin, Hao-Hsiung;Lee, Si-Chen; Lee, H. C.; Lee, Si-Chen; Lin, Hao-Hsiung; Hwang, F. C. |
| 臺大學術典藏 |
2009-02-04T18:50:58Z |
Deep Level Analysis of MBE Grown InAlAs Strained Layers
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Wu, C. W.; Lin, Hao-Hsiung; 林浩雄; Lee, T. L.; Liu, J. S.; Liu, J. S.; Lee, T. L.; Wu, C. W.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2009 |
Band alignment of InAs1-xSbx (0.05?x?0.13)/InAs0.67P0.23Sb0.10 heterostructures
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Wu, Chen-Jun; Tsai, Gene; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2009 |
GaAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer
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Lin, You-Ru; Lai, Yi-Feng; Liu, Chuan-Pu; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2008 |
Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers
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Chen, Cheng-Yuan; Lee, Jia-Ren; Lu, Chien-Rong; Liu, Hsiang-Lin; Sun, Li-Wen; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2008 |
Incorporation behaviors of group V elements in GaAsSbN grown by gas-source molecular-beam epitaxy
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Ma, Ta-Chun; Lin, Yan-Ting; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2008 |
Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy
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Hsu, Hung-Pin; Huang, Yen-Neng; Huang, Ying-Sheng; Lin, Yang-Ting; Ma, Ta-Chun; Lin, Hao-Hsiung; Tiong, Kwong-Kau; Sitarek, Piotr; Misiewicz, Jan |
| 國立臺灣大學 |
2008 |
Photoluminescence of InAs0.04P0.67Sb0.29
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Tsai, Gene; Wang, De-Lun; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2008 |
AlGaAs Ambient Light Detectors With a Human-Eye Spectral Response
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Lin, Tzu-Chiang; Ma, Ta-Chun; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2008 |
Energy gap reduction in dilute nitride GaAsSbN
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Lin, Yan-Ting; Ma, Ta-Chun; Chen, Tsung-Yi; Lin, Hao-Hsiung |
| 臺大學術典藏 |
2008 |
Incorporation behaviors of group V elements in GaAsSbN grown by gas-source molecular-beam epitaxy
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Ma, Ta-Chun; Lin, Yan-Ting; Lin, Hao-Hsiung; Ma, Ta-Chun; Lin, Yan-Ting; Lin, Hao-Hsiung |
| 臺大學術典藏 |
2008 |
AlGaAs Ambient Light Detectors With a Human-Eye Spectral Response
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Lin, Tzu-Chiang; Ma, Ta-Chun; Lin, Hao-Hsiung; Lin, Tzu-Chiang; Ma, Ta-Chun; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2007-05 |
Opposite Temperature Effects of Quantum-Dot Laser under Dual-Wavelength Operation
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Fan, Hsueh-Shih; Su, Yi-Shin; Chu, Fei-Hung; Chang, Fu-Yu; Lin, Hao-Hsiung; Lin, Ching-Fuh |
| 國立臺灣大學 |
2007 |
Opposite Temperature Effects of Quantum-Dot Laser under Dual-Wavelength Operation
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Fan, Hsueh-Shih; Su, Yi-Shin; Chu, Fei-Hung; Chang, Fu-Yu; Lin, Hao-Hsiung; Lin, Ching-Fuh |
| 國立臺灣大學 |
2007 |
InAsPSb quaternary alloy grown by gas source molecular beam epitaxy
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Tsai, Gene; Wang, De-Lun; Wu, Chia-En; Wu, Chen-Jun; Lin, Yan-Ting; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2007 |
The dependence of terahertz radiation on the built-in electric field in semiconductor microstructures
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Hwang, Jenn-Shyong; Lin, Hui-Ching; Chang, Chin-Kuo; Wang, Tai-Shen; Chang, Liang-Son; Chyi, Jen-Inn; Liu, Wei-Sheng; Chen, Shu-Han; Lin, Hao-Hsiung; Liu, Po-Wei |
| 國立臺灣大學 |
2007 |
Efficient generation of coherent acoustic phonons in (111) InGaAs/GaAs MQWs through piezoelectric effects
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Wen, Yu-Chieh; Chou, Li-Chang; Lin, Hao-Hsiung; Gusev, Vitalyi; Lin, Kung-Hsuan; Sun, Chi-Kuang |
| 國立臺灣大學 |
2006 |
[1 1 1]B-oriented GaAsSb grown by gas source molecular beam epitaxy
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Chou, Li-Chang; Lin, Yu-Ru; Wan, Cheng-Tien; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2006 |
InAs/InGaAs/GaAs Coupled Quantum Dot Laser with Predeposited InAs Seed Layer
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Lee, Chi-Sen; Chang, Fu-Yu; Liu, Day-Shan; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2006 |
Compositional dependence of longitudinal sound velocities of piezoelectric (111) InxGa(1?x)As measured by picosecond ultrasonics
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Wen, Yu-Chieh; Chou, Li-Chang; Lin, Hao-Hsiung; Lin, Kung-Hsuan; Kao, Tzeng-Fu; Sun, Chi-Kuang |
| 國立虎尾科技大學 |
2006 |
InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer
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Lee, Chi-Sen;Chang, Fu-Yu;Liu, Day-Shan;Lin, Hao-Hsiung |
| 臺大學術典藏 |
2006 |
[1 1 1]B-oriented GaAsSb grown by gas source molecular beam epitaxy
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Chou, Li-Chang; Lin, Yu-Ru; Wan, Cheng-Tien; Lin, Hao-Hsiung; Chou, Li-Chang; Lin, Yu-Ru; Wan, Cheng-Tien; Lin, Hao-Hsiung |
| 臺大學術典藏 |
2006 |
Compositional dependence of longitudinal sound velocities of piezoelectric (111) InxGa(1?x)As measured by picosecond ultrasonics
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Wen, Yu-Chieh; Chou, Li-Chang; Lin, Hao-Hsiung; Lin, Kung-Hsuan; Kao, Tzeng-Fu; Sun, Chi-Kuang; Wen, Yu-Chieh; Chou, Li-Chang; Lin, Hao-Hsiung; Lin, Kung-Hsuan; Kao, Tzeng-Fu; Sun, Chi-Kuang |
| 國立臺灣大學 |
2005-05 |
Growth of InAsSb/InAs MQW and InPSb by gas source molecular beam epitaxy
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Tsai, Gene; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2004-06 |
InAs/InGaAs quantum dot laser with high ground-state modal gain grown by solid-source molecular-beam epitaxy
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Chang, Fu-Yu; Lee, Chi-Sen; Liao, Gang-Hua; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2004 |
Photoreflectance Study on the Interface of InGaP/GaAs Heterostructures Grown by Gas Source Molecular Beam Epitaxy
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Lai, Chih-Ming; Chang, Fu-Yu; Lin, Hao-Hsiung; Jan, Gwo-Jen |
| 國立臺灣大學 |
2004 |
High SCR design for one-transistor split-gate full-featured EEPROM
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Chu, Wen-Ting; Lin, Hao-Hsiung; Wang, Yu-Hsiung; Hsieh, Chia-Ta; Sung, Hung-Cheng; Lin, Yung-Tao; Wang, C.S. |
| 國立臺灣大學 |
2004 |
Using an ammonia treatment to improve the floating-gate spacing in split-gate flash memory
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Chu, Wen-Ting; Lin, Hao-Hsiung; Tu, Yeur-Luen; Wang, Yu-Hsiung; Hsieh, Chia-Ta; Sung, Hung-Cheng; Lin, Yung-Tao; Tsai, Chia-Shiung; Wang, C.S. |
| 國立臺灣大學 |
2004 |
Shrinkable triple self-aligned field-enhanced split-gate flash memory
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Chu, Wen-Ting; Lin, Hao-Hsiung; Hsieh, Chia-Ta; Sung, Hung-Cheng; Wang, Yu-Hsiung; Lin, Yung-Tao; Wang, C.S. |
| 臺大學術典藏 |
2004 |
Photoreflectance Study on the Interface of InGaP/GaAs Heterostructures Grown by Gas Source Molecular Beam Epitaxy
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Lai, Chih-Ming; Chang, Fu-Yu; Lin, Hao-Hsiung; Jan, Gwo-Jen; Lai, Chih-Ming; Chang, Fu-Yu; Lin, Hao-Hsiung; Jan, Gwo-Jen |
| 國立臺灣大學 |
2003-12 |
Femtosecond carrier dynamics in InGaAsN single quantum well
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Hsieh, Chia-Lung; Liu, Tzu-Ming; Tien, Ming-Chun; Sun, Chi-Kuang; Sung, Li-Wei; Lin, Hao-Hsiung |
| 國立成功大學 |
2003-09 |
Study of self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance
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Hwang, Jenn-Shyong; Chen, Mei-Fei; Lin, Kuang-I; Tsai, Chiang-Nan; Hwang, Wen-Chi; Chou, Wei-Yang; Lin, Hao-Hsiung; Chen, Ming-Ching |
| 國立臺灣大學 |
2003-09 |
GaAsSb/GaAs type-II quantum well and its application on /spl sim/1.3 /spl mu/m laser
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Lin, Hao-Hsiung; Liu, Po-Wei; Chen, Jhe-Ren |
| 臺大學術典藏 |
2003-09 |
GaAsSb/GaAs type-II quantum well and its application on /spl sim/1.3 /spl mu/m laser
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Lin, Hao-Hsiung; Liu, Po-Wei; Chen, Jhe-Ren; Lin, Hao-Hsiung; Liu, Po-Wei; Chen, Jhe-Ren |
| 國立臺灣大學 |
2003-05 |
Effect of deposition method on the density of InAs/InGaAs quantum dot
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Chang, Fu-Yu; Wu, T.C.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2003 |
Study of Self-Organized InAs/GaAs Quantum Dots by Photoluminescence and Photoreflectance
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Hwang, Jenn-Shyong; Chen, Mei-Fei; Lin, Kuang-I; Tsai, Chiang-Nan; Hwang, Wen-Chi; Chou, Wei-Yang; Lin, Hao-Hsiung; Chen, Ming-Ching |
| 國立臺灣大學 |
2003 |
Band Gap Reduction in InAsN Alloys
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Shih, Ding-Kang; Lin, Hao-Hsiung; Sung, Li-Wei; Chu, Tso-Yu; Yang, T.-R. |
| 國立臺灣大學 |
2003 |
Optical Properties of InAs1–xNx/In0.53Ga0.47As Single Quantum Wells Grown by Gas Source Molecular Beam Epitaxy
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Chen, Guan-Ru; Lin, Hao-Hsiung; Wang, Jyh-Shyang; Shih, Ding-Kang |
| 臺大學術典藏 |
2003 |
Study of Self-Organized InAs/GaAs Quantum Dots by Photoluminescence and Photoreflectance
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Hwang, Jenn-Shyong; Chen, Mei-Fei; Lin, Kuang-I; Tsai, Chiang-Nan; Hwang, Wen-Chi; Chou, Wei-Yang; Lin, Hao-Hsiung; Chen, Ming-Ching; Hwang, Jenn-Shyong; Chen, Mei-Fei; Lin, Kuang-I; Tsai, Chiang-Nan; Hwang, Wen-Chi; Chou, Wei-Yang; Lin, Hao-Hsiung; Chen, Ming-Ching |
| 臺大學術典藏 |
2003 |
Optical Properties of InAs1–xNx/In0.53Ga0.47As Single Quantum Wells Grown by Gas Source Molecular Beam Epitaxy
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Wang, Jyh-Shyang; Shih, Ding-Kang; Lin, Hao-Hsiung; Chen, Guan-Ru; Lin, Hao-Hsiung; Wang, Jyh-Shyang; Shih, Ding-Kang; Chen, Guan-Ru |
| 國立臺灣大學 |
2002-11 |
Growth and characterization of low-threshold 1.3μm GaAsSb quantum well laser
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Liu, Po-Wei; Lee, Min-Han; Lin, Hao-Hsiung |
| 臺大學術典藏 |
2002-11 |
Growth and characterization of low-threshold 1.3μm GaAsSb quantum well laser
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Liu, Po-Wei; Lee, Min-Han; Lin, Hao-Hsiung; Liu, Po-Wei; Lee, Min-Han; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2002-10 |
Novel GaAs Metal–Semiconductor Field-Effect Transistors with InGaP/GaAs Multiple Quantum Barrier Capping and Buffer Layers
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Lee, Ching-Ting; Lee, Hsin-Ying; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2002-10 |
Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxy
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Liu, Po-Wei; Lee, Ming-Han; Lin, Hao-Hsiung; Chen, Jhe-Ren |
| 臺大學術典藏 |
2002-10 |
Novel GaAs Metal–Semiconductor Field-Effect Transistors with InGaP/GaAs Multiple Quantum Barrier Capping and Buffer Layers
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Lee, Ching-Ting; Lee, Hsin-Ying; Lin, Hao-Hsiung; Lee, Ching-Ting; Lee, Hsin-Ying; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2002-05 |
Band gap reduction in InAsN alloy
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Chu, Tso-Yu; Lin, Hao-Hsiung; Shih, Ding-Kang |
| 國立臺灣大學 |
2002 |
Cubic GaN grown on (0 0 1) GaAs substrate by RF plasma assisted gas source MBE
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Sung, Li-Wei; Lin, Hao-Hsiung; Chia, Chih-Ta |
显示项目 26-75 / 306 (共7页) 1 2 3 4 5 6 7 > >> 每页显示[10|25|50]项目
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