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"lin hao hsiung"的相關文件
顯示項目 21-45 / 306 (共13頁) 1 2 3 4 5 6 7 8 9 10 > >> 每頁顯示[10|25|50]項目
| 臺大學術典藏 |
2018-07-06T15:10:38Z |
Measurements of Two-Photon Absorption Coefficient and Induced Nonlinear Refractive-Index in GaAs/AlGaAs Multiquantum Well Waveguide
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Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Lin, Hao-Hsiung |
| 臺大學術典藏 |
2018-07-06T10:06:01Z |
Fabrication and Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors (HJBT's) Using a New Emitter-Edge-Thinning Design
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Ting, Jing-Lung; Lin, Hao-Hsiung; Lee, Si-Chen; Ting, Jing-Lung; 林浩雄; 李嗣涔; Ting, Jing-Lung; Lin, Hao-Hsiung; Lee, Si-Chen |
| 國立交通大學 |
2014-12-13T10:40:14Z |
OEIC用高速元件之研究
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林浩雄; LIN HAO-HSIUNG |
| 國立交通大學 |
2014-12-13T10:40:12Z |
砷化銦鎵砷化鎵應變壓電效應之研究
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林浩雄; LIN HAO-HSIUNG |
| 國立成功大學 |
2013-12 |
Double-Band Anticrossing in GaAsSbN Induced by Nitrogen and Antimony Incorporation
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Lin, Kuang-I; Lin, Kuo-Lung; Wang, Bo-Wei; Lin, Hao-Hsiung; Hwang, Jenn-Shyong |
| 國立臺灣大學 |
2010 |
Effect of thermal annealing on the blue shift of energy gap and nitrogen rearrangement in GaAsSbN
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Lin, Yan-Ting; Ma, Ta-Chun; Lin, Hao-Hsiung; Wu, Jiun-De; Huang, Ying-Sheng |
| 國立成功大學 |
2009-03-16 |
GaAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer
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Lin, You-Ru; Lai, Yi-Feng; Liu, Chuan-Pu; Lin, Hao-Hsiung |
| 臺大學術典藏 |
2009-02-04T21:31:20Z |
The Transport Mechanism for Base Current in an AlGaAs/GaAs Heterojunction Bipolar Transistor
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Lin, Hao-Hsiung;Lee, Si-Chen; Lee, Si-Chen; Lin, Hao-Hsiung |
| 臺大學術典藏 |
2009-02-04T19:26:22Z |
Evalution of DX-Center in Sn-Doped AlxGa1-xAs
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Hwang, F. C.;Lee, H. C.;Lin, Hao-Hsiung;Lee, Si-Chen; Lee, H. C.; Lee, Si-Chen; Lin, Hao-Hsiung; Hwang, F. C. |
| 臺大學術典藏 |
2009-02-04T18:50:58Z |
Deep Level Analysis of MBE Grown InAlAs Strained Layers
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Wu, C. W.; Lin, Hao-Hsiung; 林浩雄; Lee, T. L.; Liu, J. S.; Liu, J. S.; Lee, T. L.; Wu, C. W.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2009 |
Band alignment of InAs1-xSbx (0.05?x?0.13)/InAs0.67P0.23Sb0.10 heterostructures
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Wu, Chen-Jun; Tsai, Gene; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2009 |
GaAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer
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Lin, You-Ru; Lai, Yi-Feng; Liu, Chuan-Pu; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2008 |
Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers
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Chen, Cheng-Yuan; Lee, Jia-Ren; Lu, Chien-Rong; Liu, Hsiang-Lin; Sun, Li-Wen; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2008 |
Incorporation behaviors of group V elements in GaAsSbN grown by gas-source molecular-beam epitaxy
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Ma, Ta-Chun; Lin, Yan-Ting; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2008 |
Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy
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Hsu, Hung-Pin; Huang, Yen-Neng; Huang, Ying-Sheng; Lin, Yang-Ting; Ma, Ta-Chun; Lin, Hao-Hsiung; Tiong, Kwong-Kau; Sitarek, Piotr; Misiewicz, Jan |
| 國立臺灣大學 |
2008 |
Photoluminescence of InAs0.04P0.67Sb0.29
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Tsai, Gene; Wang, De-Lun; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2008 |
AlGaAs Ambient Light Detectors With a Human-Eye Spectral Response
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Lin, Tzu-Chiang; Ma, Ta-Chun; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2008 |
Energy gap reduction in dilute nitride GaAsSbN
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Lin, Yan-Ting; Ma, Ta-Chun; Chen, Tsung-Yi; Lin, Hao-Hsiung |
| 臺大學術典藏 |
2008 |
Incorporation behaviors of group V elements in GaAsSbN grown by gas-source molecular-beam epitaxy
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Ma, Ta-Chun; Lin, Yan-Ting; Lin, Hao-Hsiung; Ma, Ta-Chun; Lin, Yan-Ting; Lin, Hao-Hsiung |
| 臺大學術典藏 |
2008 |
AlGaAs Ambient Light Detectors With a Human-Eye Spectral Response
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Lin, Tzu-Chiang; Ma, Ta-Chun; Lin, Hao-Hsiung; Lin, Tzu-Chiang; Ma, Ta-Chun; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2007-05 |
Opposite Temperature Effects of Quantum-Dot Laser under Dual-Wavelength Operation
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Fan, Hsueh-Shih; Su, Yi-Shin; Chu, Fei-Hung; Chang, Fu-Yu; Lin, Hao-Hsiung; Lin, Ching-Fuh |
| 國立臺灣大學 |
2007 |
Opposite Temperature Effects of Quantum-Dot Laser under Dual-Wavelength Operation
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Fan, Hsueh-Shih; Su, Yi-Shin; Chu, Fei-Hung; Chang, Fu-Yu; Lin, Hao-Hsiung; Lin, Ching-Fuh |
| 國立臺灣大學 |
2007 |
InAsPSb quaternary alloy grown by gas source molecular beam epitaxy
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Tsai, Gene; Wang, De-Lun; Wu, Chia-En; Wu, Chen-Jun; Lin, Yan-Ting; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2007 |
The dependence of terahertz radiation on the built-in electric field in semiconductor microstructures
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Hwang, Jenn-Shyong; Lin, Hui-Ching; Chang, Chin-Kuo; Wang, Tai-Shen; Chang, Liang-Son; Chyi, Jen-Inn; Liu, Wei-Sheng; Chen, Shu-Han; Lin, Hao-Hsiung; Liu, Po-Wei |
| 國立臺灣大學 |
2007 |
Efficient generation of coherent acoustic phonons in (111) InGaAs/GaAs MQWs through piezoelectric effects
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Wen, Yu-Chieh; Chou, Li-Chang; Lin, Hao-Hsiung; Gusev, Vitalyi; Lin, Kung-Hsuan; Sun, Chi-Kuang |
顯示項目 21-45 / 306 (共13頁) 1 2 3 4 5 6 7 8 9 10 > >> 每頁顯示[10|25|50]項目
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