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"lin hao hsiung"的相關文件
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| 臺大學術典藏 |
2018-09-10T07:07:59Z |
Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy
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Hsu, Hung-Pin;Huang, Yen-Neng;Huang, Ying-Sheng;Lin, Yang-Ting;Ma, Ta-Chun;Lin, Hao-Hsiung;Tiong, Kwong-Kau;Sitarek, Piotr;Misiewicz, Jan; Hsu, Hung-Pin; Huang, Yen-Neng; Huang, Ying-Sheng; Lin, Yang-Ting; Ma, Ta-Chun; Lin, Hao-Hsiung; Tiong, Kwong-Kau; Sitarek, Piotr; Misiewicz, Jan; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:07:59Z |
Photoluminescence of InAs0.04P0.67Sb0.29
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Tsai, Gene; Wang, De-Lun; Lin, Hao-Hsiung; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:07:58Z |
Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers
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Chen, Cheng-Yuan; Lee, Jia-Ren; Lu, Chien-Rong; Liu, Hsiang-Lin; Sun, Li-Wen; Lin, Hao-Hsiung; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:44Z |
The dependence of terahertz radiation on the built-in electric field in semiconductor microstructures
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Hwang, Jenn-Shyong; Lin, Hui-Ching; Chang, Chin-Kuo; Wang, Tai-Shen; Chang, Liang-Son; Chyi, Jen-Inn; Liu, Wei-Sheng; Chen, Shu-Han; Lin, Hao-Hsiung; Liu, Po-Wei; HAO-HSIUNG LIN; Hwang, Jenn-Shyong; Lin, Hui-Ching; Chang, Chin-Kuo; Wang, Tai-Shen; Chang, Liang-Son; Chyi, Jen-Inn; Liu, Wei-Sheng; Chen, Shu-Han; Lin, Hao-Hsiung; Liu, Po-Wei |
| 臺大學術典藏 |
2018-09-10T04:58:48Z |
Shrinkable triple self-aligned field-enhanced split-gate flash memory
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Chu, Wen-Ting; Lin, Hao-Hsiung; Hsieh, Chia-Ta; Sung, Hung-Cheng; Wang, Yu-Hsiung; Lin, Yung-Tao; Wang, C.S.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:47Z |
High SCR design for one-transistor split-gate full-featured EEPROM
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Chu, Wen-Ting; Lin, Hao-Hsiung; Wang, Yu-Hsiung; Hsieh, Chia-Ta; Sung, Hung-Cheng; Lin, Yung-Tao; Wang, C.S.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:47Z |
Using an ammonia treatment to improve the floating-gate spacing in split-gate flash memory
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Chu, Wen-Ting; Lin, Hao-Hsiung; Tu, Yeur-Luen; Wang, Yu-Hsiung; Hsieh, Chia-Ta; Sung, Hung-Cheng; Lin, Yung-Tao; Tsai, Chia-Shiung; Wang, C.S.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:32:33Z |
Femtosecond carrier dynamics in InGaAsN single quantum well
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Sun, C.-K.; Sung, L.-W.; Lin, H.-H.; Sun, Chi-Kuang; Lin, Hao-Hsiung; Hsieh, C.-L.; Liu, T.-M.; Tien, M.-C. |
| 臺大學術典藏 |
2018-09-10T04:14:55Z |
Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxy
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Liu, Po-Wei; Lee, Ming-Han; Lin, Hao-Hsiung; Chen, Jhe-Ren; Lin, Hao-Hsiung |
| 臺大學術典藏 |
2018-09-10T03:50:01Z |
Multiple quantum wells and laser structures containing InAs quantum dots grown by molecular-beam epitaxy
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Wu, Cheng-Zu; Wang, Pai-Yong; Guo, Xing-Jian; Wu, Yi-Tsuo; Liang, Chiu-Yueh; Hwang, Fei-Chang; Jiang, Wen-Chang; Lay, Ferng-Jye; Sung, Li-Wei; Lin, Hao-Hsiung; Chang, Chin-An; HAO-HSIUNG LINet al. |
| 臺大學術典藏 |
2018-07-06T15:10:38Z |
Measurements of Two-Photon Absorption Coefficient and Induced Nonlinear Refractive-Index in GaAs/AlGaAs Multiquantum Well Waveguide
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Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Lin, Hao-Hsiung |
| 臺大學術典藏 |
2018-07-06T10:06:01Z |
Fabrication and Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors (HJBT's) Using a New Emitter-Edge-Thinning Design
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Ting, Jing-Lung; Lin, Hao-Hsiung; Lee, Si-Chen; Ting, Jing-Lung; 林浩雄; 李嗣涔; Ting, Jing-Lung; Lin, Hao-Hsiung; Lee, Si-Chen |
| 國立交通大學 |
2014-12-13T10:40:14Z |
OEIC用高速元件之研究
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林浩雄; LIN HAO-HSIUNG |
| 國立交通大學 |
2014-12-13T10:40:12Z |
砷化銦鎵砷化鎵應變壓電效應之研究
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林浩雄; LIN HAO-HSIUNG |
| 國立成功大學 |
2013-12 |
Double-Band Anticrossing in GaAsSbN Induced by Nitrogen and Antimony Incorporation
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Lin, Kuang-I; Lin, Kuo-Lung; Wang, Bo-Wei; Lin, Hao-Hsiung; Hwang, Jenn-Shyong |
| 國立臺灣大學 |
2010 |
Effect of thermal annealing on the blue shift of energy gap and nitrogen rearrangement in GaAsSbN
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Lin, Yan-Ting; Ma, Ta-Chun; Lin, Hao-Hsiung; Wu, Jiun-De; Huang, Ying-Sheng |
| 國立成功大學 |
2009-03-16 |
GaAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer
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Lin, You-Ru; Lai, Yi-Feng; Liu, Chuan-Pu; Lin, Hao-Hsiung |
| 臺大學術典藏 |
2009-02-04T21:31:20Z |
The Transport Mechanism for Base Current in an AlGaAs/GaAs Heterojunction Bipolar Transistor
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Lin, Hao-Hsiung;Lee, Si-Chen; Lee, Si-Chen; Lin, Hao-Hsiung |
| 臺大學術典藏 |
2009-02-04T19:26:22Z |
Evalution of DX-Center in Sn-Doped AlxGa1-xAs
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Hwang, F. C.;Lee, H. C.;Lin, Hao-Hsiung;Lee, Si-Chen; Lee, H. C.; Lee, Si-Chen; Lin, Hao-Hsiung; Hwang, F. C. |
| 臺大學術典藏 |
2009-02-04T18:50:58Z |
Deep Level Analysis of MBE Grown InAlAs Strained Layers
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Wu, C. W.; Lin, Hao-Hsiung; 林浩雄; Lee, T. L.; Liu, J. S.; Liu, J. S.; Lee, T. L.; Wu, C. W.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2009 |
Band alignment of InAs1-xSbx (0.05?x?0.13)/InAs0.67P0.23Sb0.10 heterostructures
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Wu, Chen-Jun; Tsai, Gene; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2009 |
GaAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer
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Lin, You-Ru; Lai, Yi-Feng; Liu, Chuan-Pu; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2008 |
Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers
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Chen, Cheng-Yuan; Lee, Jia-Ren; Lu, Chien-Rong; Liu, Hsiang-Lin; Sun, Li-Wen; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2008 |
Incorporation behaviors of group V elements in GaAsSbN grown by gas-source molecular-beam epitaxy
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Ma, Ta-Chun; Lin, Yan-Ting; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2008 |
Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy
|
Hsu, Hung-Pin; Huang, Yen-Neng; Huang, Ying-Sheng; Lin, Yang-Ting; Ma, Ta-Chun; Lin, Hao-Hsiung; Tiong, Kwong-Kau; Sitarek, Piotr; Misiewicz, Jan |
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