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"lin hao hsiung"的相關文件
顯示項目 116-125 / 306 (共31頁)
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| 國立臺灣大學 |
1996 |
半導體光電現象及應用整合計畫:子計畫三磷砷化銦鎵光電材料及元件之研究
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林浩雄; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1995-11 |
Balun design for uniplanar broad band double balanced mixer
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Chiou, Hwann-Kaeo; Chang, Chi-Yang; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1995-11 |
Balun design for uniplanar broad band double balanced mixer
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Chiou, Hwann-Kaeo; Chang, Chi-Yang; Lin, Hao-Hsiung; Chiou, Hwann-Kaeo; Chang, Chi-Yang; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1995-05 |
The incorporation behavior of As and P in GaInAsP(λ=1.3μm) on InP grown by gas source molecular beam epitaxy
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Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1995-05 |
The incorporation behavior of As and P in GaInAsP(λ=1.3μm) on InP grown by gas source molecular beam epitaxy
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Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung; Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1995 |
Gas Source MBE Growth of InP Under In-Rich Conditions
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Lee, T. L.; Liu, J. S.; 林浩雄; Lee, T. L.; Liu, J. S.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1995 |
The Incorporation Behavior of As and P in GaInAsP(λ -1.3μm) on InP Grown by Gas Source Molecular Beam Epitaxy
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Lee, T. L.; Liu, J. S.; 林浩雄; Lee, T. L.; Liu, J. S.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1995 |
Relation between the collector current and the two-dimensional electron gas stored in the base-collector heterojunction notch of InAlAs/InGaAs/InAlGaAs DHBTs
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Huang, Chao-Hsing; Lee, Tsuen-Lin; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1995 |
The incorporation behavior of As and P in GaInAsP (λ ? μm) on InP grown by gas source molecular beam epitaxy
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Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1995 |
Gas Source MBE Growth of InP Under In-Rich Conditions
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Lin, Hao-Hsiung; Lee, T. L.; Liu, J. S.; Lee, T. L.; Liu, J. S.; 林浩雄; Lin, Hao-Hsiung |
顯示項目 116-125 / 306 (共31頁)
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