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機構	日期	題名	作者
臺大學術典藏	2018-09-10T04:58:47Z	High SCR design for one-transistor split-gate full-featured EEPROM	Chu, Wen-Ting; Lin, Hao-Hsiung; Wang, Yu-Hsiung; Hsieh, Chia-Ta; Sung, Hung-Cheng; Lin, Yung-Tao; Wang, C.S.; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:58:47Z	Using an ammonia treatment to improve the floating-gate spacing in split-gate flash memory	Chu, Wen-Ting; Lin, Hao-Hsiung; Tu, Yeur-Luen; Wang, Yu-Hsiung; Hsieh, Chia-Ta; Sung, Hung-Cheng; Lin, Yung-Tao; Tsai, Chia-Shiung; Wang, C.S.; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:32:33Z	Femtosecond carrier dynamics in InGaAsN single quantum well	Sun, C.-K.; Sung, L.-W.; Lin, H.-H.; Sun, Chi-Kuang; Lin, Hao-Hsiung; Hsieh, C.-L.; Liu, T.-M.; Tien, M.-C.
臺大學術典藏	2018-09-10T04:14:55Z	Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxy	Liu, Po-Wei; Lee, Ming-Han; Lin, Hao-Hsiung; Chen, Jhe-Ren; Lin, Hao-Hsiung
臺大學術典藏	2018-09-10T03:50:01Z	Multiple quantum wells and laser structures containing InAs quantum dots grown by molecular-beam epitaxy	Wu, Cheng-Zu; Wang, Pai-Yong; Guo, Xing-Jian; Wu, Yi-Tsuo; Liang, Chiu-Yueh; Hwang, Fei-Chang; Jiang, Wen-Chang; Lay, Ferng-Jye; Sung, Li-Wei; Lin, Hao-Hsiung; Chang, Chin-An; HAO-HSIUNG LINet al.
臺大學術典藏	2018-07-06T15:10:38Z	Measurements of Two-Photon Absorption Coefficient and Induced Nonlinear Refractive-Index in GaAs/AlGaAs Multiquantum Well Waveguide	Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Lin, Hao-Hsiung
臺大學術典藏	2018-07-06T10:06:01Z	Fabrication and Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors (HJBT's) Using a New Emitter-Edge-Thinning Design	Ting, Jing-Lung; Lin, Hao-Hsiung; Lee, Si-Chen; Ting, Jing-Lung; 林浩雄; 李嗣涔; Ting, Jing-Lung; Lin, Hao-Hsiung; Lee, Si-Chen
國立交通大學	2014-12-13T10:40:14Z	OEIC用高速元件之研究	林浩雄; LIN HAO-HSIUNG
國立交通大學	2014-12-13T10:40:12Z	砷化銦鎵砷化鎵應變壓電效應之研究	林浩雄; LIN HAO-HSIUNG
國立成功大學	2013-12	Double-Band Anticrossing in GaAsSbN Induced by Nitrogen and Antimony Incorporation	Lin, Kuang-I; Lin, Kuo-Lung; Wang, Bo-Wei; Lin, Hao-Hsiung; Hwang, Jenn-Shyong
國立臺灣大學	2010	Effect of thermal annealing on the blue shift of energy gap and nitrogen rearrangement in GaAsSbN	Lin, Yan-Ting; Ma, Ta-Chun; Lin, Hao-Hsiung; Wu, Jiun-De; Huang, Ying-Sheng
國立成功大學	2009-03-16	GaAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer	Lin, You-Ru; Lai, Yi-Feng; Liu, Chuan-Pu; Lin, Hao-Hsiung
臺大學術典藏	2009-02-04T21:31:20Z	The Transport Mechanism for Base Current in an AlGaAs/GaAs Heterojunction Bipolar Transistor	Lin, Hao-Hsiung;Lee, Si-Chen; Lee, Si-Chen; Lin, Hao-Hsiung
臺大學術典藏	2009-02-04T19:26:22Z	Evalution of DX-Center in Sn-Doped AlxGa1-xAs	Hwang, F. C.;Lee, H. C.;Lin, Hao-Hsiung;Lee, Si-Chen; Lee, H. C.; Lee, Si-Chen; Lin, Hao-Hsiung; Hwang, F. C.
臺大學術典藏	2009-02-04T18:50:58Z	Deep Level Analysis of MBE Grown InAlAs Strained Layers	Wu, C. W.; Lin, Hao-Hsiung; 林浩雄; Lee, T. L.; Liu, J. S.; Liu, J. S.; Lee, T. L.; Wu, C. W.; Lin, Hao-Hsiung
國立臺灣大學	2009	Band alignment of InAs1-xSbx (0.05?x?0.13)/InAs0.67P0.23Sb0.10 heterostructures	Wu, Chen-Jun; Tsai, Gene; Lin, Hao-Hsiung
國立臺灣大學	2009	GaAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer	Lin, You-Ru; Lai, Yi-Feng; Liu, Chuan-Pu; Lin, Hao-Hsiung
國立臺灣大學	2008	Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers	Chen, Cheng-Yuan; Lee, Jia-Ren; Lu, Chien-Rong; Liu, Hsiang-Lin; Sun, Li-Wen; Lin, Hao-Hsiung
國立臺灣大學	2008	Incorporation behaviors of group V elements in GaAsSbN grown by gas-source molecular-beam epitaxy	Ma, Ta-Chun; Lin, Yan-Ting; Lin, Hao-Hsiung
國立臺灣大學	2008	Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy	Hsu, Hung-Pin; Huang, Yen-Neng; Huang, Ying-Sheng; Lin, Yang-Ting; Ma, Ta-Chun; Lin, Hao-Hsiung; Tiong, Kwong-Kau; Sitarek, Piotr; Misiewicz, Jan
國立臺灣大學	2008	Photoluminescence of InAs0.04P0.67Sb0.29	Tsai, Gene; Wang, De-Lun; Lin, Hao-Hsiung
國立臺灣大學	2008	AlGaAs Ambient Light Detectors With a Human-Eye Spectral Response	Lin, Tzu-Chiang; Ma, Ta-Chun; Lin, Hao-Hsiung
國立臺灣大學	2008	Energy gap reduction in dilute nitride GaAsSbN	Lin, Yan-Ting; Ma, Ta-Chun; Chen, Tsung-Yi; Lin, Hao-Hsiung
臺大學術典藏	2008	Incorporation behaviors of group V elements in GaAsSbN grown by gas-source molecular-beam epitaxy	Ma, Ta-Chun; Lin, Yan-Ting; Lin, Hao-Hsiung; Ma, Ta-Chun; Lin, Yan-Ting; Lin, Hao-Hsiung
臺大學術典藏	2008	AlGaAs Ambient Light Detectors With a Human-Eye Spectral Response	Lin, Tzu-Chiang; Ma, Ta-Chun; Lin, Hao-Hsiung; Lin, Tzu-Chiang; Ma, Ta-Chun; Lin, Hao-Hsiung
國立臺灣大學	2007-05	Opposite Temperature Effects of Quantum-Dot Laser under Dual-Wavelength Operation	Fan, Hsueh-Shih; Su, Yi-Shin; Chu, Fei-Hung; Chang, Fu-Yu; Lin, Hao-Hsiung; Lin, Ching-Fuh
國立臺灣大學	2007	Opposite Temperature Effects of Quantum-Dot Laser under Dual-Wavelength Operation	Fan, Hsueh-Shih; Su, Yi-Shin; Chu, Fei-Hung; Chang, Fu-Yu; Lin, Hao-Hsiung; Lin, Ching-Fuh
國立臺灣大學	2007	InAsPSb quaternary alloy grown by gas source molecular beam epitaxy	Tsai, Gene; Wang, De-Lun; Wu, Chia-En; Wu, Chen-Jun; Lin, Yan-Ting; Lin, Hao-Hsiung
國立臺灣大學	2007	The dependence of terahertz radiation on the built-in electric field in semiconductor microstructures	Hwang, Jenn-Shyong; Lin, Hui-Ching; Chang, Chin-Kuo; Wang, Tai-Shen; Chang, Liang-Son; Chyi, Jen-Inn; Liu, Wei-Sheng; Chen, Shu-Han; Lin, Hao-Hsiung; Liu, Po-Wei
國立臺灣大學	2007	Efficient generation of coherent acoustic phonons in (111) InGaAs/GaAs MQWs through piezoelectric effects	Wen, Yu-Chieh; Chou, Li-Chang; Lin, Hao-Hsiung; Gusev, Vitalyi; Lin, Kung-Hsuan; Sun, Chi-Kuang
國立臺灣大學	2006	[1 1 1]B-oriented GaAsSb grown by gas source molecular beam epitaxy	Chou, Li-Chang; Lin, Yu-Ru; Wan, Cheng-Tien; Lin, Hao-Hsiung
國立臺灣大學	2006	InAs/InGaAs/GaAs Coupled Quantum Dot Laser with Predeposited InAs Seed Layer	Lee, Chi-Sen; Chang, Fu-Yu; Liu, Day-Shan; Lin, Hao-Hsiung
國立臺灣大學	2006	Compositional dependence of longitudinal sound velocities of piezoelectric (111) InxGa(1?x)As measured by picosecond ultrasonics	Wen, Yu-Chieh; Chou, Li-Chang; Lin, Hao-Hsiung; Lin, Kung-Hsuan; Kao, Tzeng-Fu; Sun, Chi-Kuang
國立虎尾科技大學	2006	InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer	Lee, Chi-Sen;Chang, Fu-Yu;Liu, Day-Shan;Lin, Hao-Hsiung
臺大學術典藏	2006	[1 1 1]B-oriented GaAsSb grown by gas source molecular beam epitaxy	Chou, Li-Chang; Lin, Yu-Ru; Wan, Cheng-Tien; Lin, Hao-Hsiung; Chou, Li-Chang; Lin, Yu-Ru; Wan, Cheng-Tien; Lin, Hao-Hsiung
臺大學術典藏	2006	Compositional dependence of longitudinal sound velocities of piezoelectric (111) InxGa(1?x)As measured by picosecond ultrasonics	Wen, Yu-Chieh; Chou, Li-Chang; Lin, Hao-Hsiung; Lin, Kung-Hsuan; Kao, Tzeng-Fu; Sun, Chi-Kuang; Wen, Yu-Chieh; Chou, Li-Chang; Lin, Hao-Hsiung; Lin, Kung-Hsuan; Kao, Tzeng-Fu; Sun, Chi-Kuang
國立臺灣大學	2005-05	Growth of InAsSb/InAs MQW and InPSb by gas source molecular beam epitaxy	Tsai, Gene; Lin, Hao-Hsiung
國立臺灣大學	2004-06	InAs/InGaAs quantum dot laser with high ground-state modal gain grown by solid-source molecular-beam epitaxy	Chang, Fu-Yu; Lee, Chi-Sen; Liao, Gang-Hua; Lin, Hao-Hsiung
國立臺灣大學	2004	Photoreflectance Study on the Interface of InGaP/GaAs Heterostructures Grown by Gas Source Molecular Beam Epitaxy	Lai, Chih-Ming; Chang, Fu-Yu; Lin, Hao-Hsiung; Jan, Gwo-Jen
國立臺灣大學	2004	High SCR design for one-transistor split-gate full-featured EEPROM	Chu, Wen-Ting; Lin, Hao-Hsiung; Wang, Yu-Hsiung; Hsieh, Chia-Ta; Sung, Hung-Cheng; Lin, Yung-Tao; Wang, C.S.
國立臺灣大學	2004	Using an ammonia treatment to improve the floating-gate spacing in split-gate flash memory	Chu, Wen-Ting; Lin, Hao-Hsiung; Tu, Yeur-Luen; Wang, Yu-Hsiung; Hsieh, Chia-Ta; Sung, Hung-Cheng; Lin, Yung-Tao; Tsai, Chia-Shiung; Wang, C.S.
國立臺灣大學	2004	Shrinkable triple self-aligned field-enhanced split-gate flash memory	Chu, Wen-Ting; Lin, Hao-Hsiung; Hsieh, Chia-Ta; Sung, Hung-Cheng; Wang, Yu-Hsiung; Lin, Yung-Tao; Wang, C.S.
臺大學術典藏	2004	Photoreflectance Study on the Interface of InGaP/GaAs Heterostructures Grown by Gas Source Molecular Beam Epitaxy	Lai, Chih-Ming; Chang, Fu-Yu; Lin, Hao-Hsiung; Jan, Gwo-Jen; Lai, Chih-Ming; Chang, Fu-Yu; Lin, Hao-Hsiung; Jan, Gwo-Jen
國立臺灣大學	2003-12	Femtosecond carrier dynamics in InGaAsN single quantum well	Hsieh, Chia-Lung; Liu, Tzu-Ming; Tien, Ming-Chun; Sun, Chi-Kuang; Sung, Li-Wei; Lin, Hao-Hsiung
國立成功大學	2003-09	Study of self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance	Hwang, Jenn-Shyong; Chen, Mei-Fei; Lin, Kuang-I; Tsai, Chiang-Nan; Hwang, Wen-Chi; Chou, Wei-Yang; Lin, Hao-Hsiung; Chen, Ming-Ching
國立臺灣大學	2003-09	GaAsSb/GaAs type-II quantum well and its application on /spl sim/1.3 /spl mu/m laser	Lin, Hao-Hsiung; Liu, Po-Wei; Chen, Jhe-Ren
臺大學術典藏	2003-09	GaAsSb/GaAs type-II quantum well and its application on /spl sim/1.3 /spl mu/m laser	Lin, Hao-Hsiung; Liu, Po-Wei; Chen, Jhe-Ren; Lin, Hao-Hsiung; Liu, Po-Wei; Chen, Jhe-Ren
國立臺灣大學	2003-05	Effect of deposition method on the density of InAs/InGaAs quantum dot	Chang, Fu-Yu; Wu, T.C.; Lin, Hao-Hsiung
國立臺灣大學	2003	Study of Self-Organized InAs/GaAs Quantum Dots by Photoluminescence and Photoreflectance	Hwang, Jenn-Shyong; Chen, Mei-Fei; Lin, Kuang-I; Tsai, Chiang-Nan; Hwang, Wen-Chi; Chou, Wei-Yang; Lin, Hao-Hsiung; Chen, Ming-Ching
國立臺灣大學	2003	Band Gap Reduction in InAsN Alloys	Shih, Ding-Kang; Lin, Hao-Hsiung; Sung, Li-Wei; Chu, Tso-Yu; Yang, T.-R.

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