| 國立臺灣大學 |
1991 |
Two-Dimensional Simulation of the Electric Field Spike of Indium Antimonide Charge Injection Devices
|
Wu, C. W.; 林浩雄; Wu, C. W.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1991 |
A Study on the Fabrication of AlGaAs/GaAs Nonabsorption Mirror Laser Diode
|
Cheng, S. J.; 林浩雄; Cheng, S. J.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1991 |
AlGaAs/GaAs Heterojunction Bipolar Transistors with High Current Gain Grown by Molecular Beam Epitaxy
|
Wu, Chien-Hsing; 李嗣涔; 林浩雄; Wu, Chien-Hsing; Lee, Si-Chen; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1991 |
Current Transport Characteristics Of P+/N-AlxGa1-xAs Homojunction Diode
|
林浩雄; Liu, Y. S.; Lin, Hao-Hsiung; Liu, Y. S. |
| 國立臺灣大學 |
1991 |
In0.53Ga0.47As and in0.52Al0.48As on Inp Grown by Molecular Beam Epitax
|
Chen, M. K.; 李嗣涔; 林浩雄; Chen, M. K.; Lee, Si-Chen; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1991 |
InAlAs/InGaAs NPN Single Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy
|
Huang, Chang-Hsiu; Chen, M. K.; 林浩雄; Huang, Chang-Hsiu; Chen, M. K.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1991 |
Reactive Ion Etching of GaAs Using CCl2F2 Plasma
|
Hsu, S. M.; 林浩雄; Hsu, S. M.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1991 |
Study on the Charge Transient Spectroscopy of Au/Cr/Sio2/N-Insb MIS Capacitor
|
Wu, C. W.; 林浩雄; Lin, J. H.; Liu, Kou-Chen; Sun, Tai-Ping; 楊聲震; Wu, C. W.; Lin, Hao-Hsiung; Lin, J. H.; Liu, Kou-Chen; Sun, Tai-Ping; Yang, Seng-Jenn |
| 國立臺灣大學 |
1991 |
Two-Phase Liquid Phase Epitaxy of Growing in0.53Ga0.47As on Inp
|
Chen, M. K.; 林浩雄; Chen, M. K.; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1991 |
Heavily Doping of GaAs with be for Application to p+-type AlGaAs/GaAs Heterojunction Infrared Detector
|
Shieh, T. H.; Liu, P. D.; Wu, Ming-Yen; Chang, T. C.; Lee, Si-Chen; Lin, Hao-Hsiung; Liu, P. D.; Shieh, T. H.; Wu, Ming-Yen; Chang, T. C.; 李嗣涔; 林浩雄; Liu, P. D.; Wu, Ming-Yen; Chang, T. C.; Lee, Si-Chen; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1991 |
A Study on the Fabrication of AlGaAs/GaAs Nonabsorption Mirror Laser Diode
|
Cheng, S. J.; Lin, Hao-Hsiung; Cheng, S. J.; 林浩雄; Cheng, S. J.; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1991 |
AlGaAs/GaAs Heterojunction Bipolar Transistors with High Current Gain Grown by Molecular Beam Epitaxy
|
Wu, Chien-Hsing; Lee, Si-Chen; Lin, Hao-Hsiung; Wu, Chien-Hsing; 李嗣涔; 林浩雄; Lee, Si-Chen; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1991 |
Current Transport Characteristics Of P+/N-AlxGa1-xAs Homojunction Diode
|
Lin, Hao-Hsiung; Liu, Y. S.; 林浩雄; Liu, Y. S.; Lin, Hao-Hsiung; Liu, Y. S. |
| 臺大學術典藏 |
1991 |
In0.53Ga0.47As and in0.52Al0.48As on Inp Grown by Molecular Beam Epitax
|
Chen, M. K.; Lee, Si-Chen; Lin, Hao-Hsiung; Chen, M. K.; 李嗣涔; 林浩雄; Chen, M. K.; Lee, Si-Chen; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1991 |
InAlAs/InGaAs NPN Single Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy
|
Huang, Chang-Hsiu; Chen, M. K.; Lin, Hao-Hsiung; Huang, Chang-Hsiu; Chen, M. K.; 林浩雄; Huang, Chang-Hsiu; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1991 |
Reactive Ion Etching of GaAs Using CCl2F2 Plasma
|
Hsu, S. M.; Lin, Hao-Hsiung; Hsu, S. M.; 林浩雄; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1991 |
Study on the Charge Transient Spectroscopy of Au/Cr/Sio2/N-Insb MIS Capacitor
|
Wu, C. W.; Liu, Kou-Chen; Sun, Tai-Ping; Lin, Hao-Hsiung; Lin, J. H.; Yang, Seng-Jenn; Wu, C. W.; 林浩雄; Lin, J. H.; Liu, Kou-Chen; Sun, Tai-Ping; 楊聲震; Wu, C. W.; Lin, Hao-Hsiung; Lin, J. H.; Yang, Seng-Jenn |
| 臺大學術典藏 |
1991 |
Two-Phase Liquid Phase Epitaxy of Growing in0.53Ga0.47As on Inp
|
Chen, M. K.; Lin, Hao-Hsiung; Chen, M. K.; 林浩雄; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1991 |
Two-Dimensional Simulation of the Electric Field Spike of Indium Antimonide Charge Injection Devices
|
Wu, C. W.; Lin, Hao-Hsiung; Wu, C. W.; 林浩雄; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1990-07 |
AlGaAs/GaAs Heterojunction Bipolar Transistors
|
林浩雄; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1990-07 |
AlGaAs/GaAs Heterojunction Bipolar Transistors
|
Lin, Hao-Hsiung; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1990 |
雷射二極體技術之研究(四)量子井雷射
|
林浩雄; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1990 |
臺大電機系化合物半導體三年研究發展計畫(二)
|
李嗣涔; 林浩雄; Lee, Si-Chen; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1990 |
Abrupt Heterointerfaces in Al0.05Ga0.95As/Al0.35Ga0.65As Quantum Well Structure Grown by Liquid Phase Epitaxy
|
Chen, J. A.; Lee, J. H.; 李嗣涔; 林浩雄; Chen, J. A.; Lee, J. H.; Lee, Si-Chen; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1990 |
The Transport Mechanisim for Base Current in an AlGaAs/GaAs Heterojunction Bipolar Transistor
|
Wu, Chung Cheng; 李嗣涔; 林浩雄; Wu, Chung Cheng; Lee, Si-Chen; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1990 |
Model for Vision Illusion and Its Application to Pattern Representation
|
林浩雄; 李嗣涔; Lin, Hao-Hsiung; Lee, Si-Chen |
| 國立臺灣大學 |
1990 |
P-Al0.2Ga0.8As/n-Al0.05Ga0.95As/Au Schottky Collector Heterojunction Bipolar Transistor with a Design of High Bandgap Extrinsic Base
|
Chen, M. C.; 林浩雄; Chen, M. C.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1990 |
The Transport Mechanism for Base Current in an AlGaAs/GaAs Heterojunction Bipolar Transistor
|
Wu, Chung Cheng; 李嗣涔; 林浩雄; Wu, Chung Cheng; Lee, Si-Chen; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1990 |
Two-dimensional simulation on the electric field spike of indium antimonide charge injection devices
|
Wu, Chao-Wen; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1990 |
Abrupt Heterointerfaces in Al0.05Ga0.95As/Al0.35Ga0.65As Quantum Well Structure Grown by Liquid Phase Epitaxy
|
Chen, J. A.; Lee, J. H.; Lee, Si-Chen; Lin, Hao-Hsiung; Chen, J. A.; Lee, J. H.; 李嗣涔; 林浩雄; Lee, J. H.; Lee, Si-Chen; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1990 |
Model for Vision Illusion and Its Application to Pattern Representation
|
Lin, Hao-Hsiung; Lee, Si-Chen; Lin, Hao-Hsiung; Lee, Si-Chen |
| 臺大學術典藏 |
1990 |
P-Al0.2Ga0.8As/n-Al0.05Ga0.95As/Au Schottky Collector Heterojunction Bipolar Transistor with a Design of High Bandgap Extrinsic Base
|
Chen, M. C.; Lin, Hao-Hsiung; Chen, M. C.; 林浩雄; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1990 |
Two-dimensional simulation on the electric field spike of indium antimonide charge injection devices
|
Wu, Chao-Wen; Lin, Hao-Hsiung; Wu, Chao-Wen; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1989 |
The Hot Electron Effect in Double Heterojunction Bipolar Transistors:Theory and Experiment
|
Chen, C. Z.; 李嗣涔; 林浩雄; Chen, C. Z.; Lee, Si-Chen; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1989 |
Abrupt Heterointerfaces in Al0.35Ga0.65As/Al0.05Ga0.95As/Al0.35Ga0.65As Quantum Well Structure Grown by Liquid Phase Epitaxy
|
Chen, J. A.; Lee, J. H.; 李嗣涔; 林浩雄; Chen, J. A.; Lee, J. H.; Lee, Si-Chen; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1989 |
Y-Junction and Misaligned-Stripe Diode Laser Arrays with Nonuniform Refective Diffraction Coupler
|
Lay, T. S.; 李嗣涔; 林浩雄; Lay, T. S.; Lee, Si-Chen; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1989 |
Fabrication and Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors (HJBT's) Using a New Emitter-Edge-Thinning Design
|
Ting, Jing-Lung; 林浩雄; 李嗣涔; Ting, Jing-Lung; Lin, Hao-Hsiung; Lee, Si-Chen |
| 國立臺灣大學 |
1989 |
Minority-Carrier Lifetime Measurement Using an Al/SiO2/p-Si MOS Capacitor
|
林浩雄; Jih, H. J.; Lin, Hao-Hsiung; Jih, H. J. |
| 國立臺灣大學 |
1989 |
Two-Dimensional Simulation on the Electric Field Distribution of Indium Antimonide (InSb) Charge Injection Devices (CID's)
|
Wu, C. W.; 林浩雄; Wu, C. W.; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1989 |
Minority-Carrier Lifetime Measurement Using an Al/SiO2/p-Si MOS Capacitor
|
Lin, Hao-Hsiung; Jih, H. J.; 林浩雄; Jih, H. J.; Lin, Hao-Hsiung; Jih, H. J. |
| 臺大學術典藏 |
1989 |
Two-Dimensional Simulation on the Electric Field Distribution of Indium Antimonide (InSb) Charge Injection Devices (CID's)
|
Wu, C. W.; Lin, Hao-Hsiung; Wu, C. W.; 林浩雄; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1989 |
Abrupt Heterointerfaces in Al0.35Ga0.65As/Al0.05Ga0.95As/Al0.35Ga0.65As Quantum Well Structure Grown by Liquid Phase Epitaxy
|
Chen, J. A.; Lee, J. H.; Lee, Si-Chen; Lin, Hao-Hsiung; Chen, J. A.; Lee, J. H.; 李嗣涔; 林浩雄; Chen, J. A.; Lee, J. H.; Lee, Si-Chen; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1989 |
Y-Junction and Misaligned-Stripe Diode Laser Arrays with Nonuniform Refective Diffraction Coupler
|
Lay, T. S.; Lee, Si-Chen; Lin, Hao-Hsiung; Lay, T. S.; 李嗣涔; 林浩雄; Lee, Si-Chen; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1988 |
砷化銦鋁鎵光電元件技術研究
|
林浩雄; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1988 |
Al0.35Ga0.65As/Al0.05Ga0.95As/Al0.35Ga0.65As Quantum Well Structure Grown by Liquid Phase Epitaxy
|
Chen, J. A.; 李嗣涔; 林浩雄; Chen, J. A.; Lee, Si-Chen; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1988 |
The Characteristics of Si-Doped GaAs Epilayers Grown by Metal Organic Chemical Vapor Deposition (MOCVD) Using Silane Source
|
劉志文; Chen, S. L.; Lay, J. P.; 李嗣涔; 林浩雄; 劉志文; Chen, S. L.; Lay, J. P.; 李嗣涔; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1988 |
The hot electron effect in double heterojunction bipolar transistors: Theory and experiment
|
Chen, Chung-Zen; Lee, Si-Chen; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1988 |
Al0.35Ga0.65As/Al0.05Ga0.95As/Al0.35Ga0.65As Quantum Well Structure Grown by Liquid Phase Epitaxy
|
Chen, J. A.; Lee, Si-Chen; Lin, Hao-Hsiung; Chen, J. A.; 李嗣涔; 林浩雄; Lee, Si-Chen; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1988 |
The Characteristics of Si-Doped GaAs Epilayers Grown by Metal Organic Chemical Vapor Deposition (MOCVD) Using Silane Source
|
Chen, S. L.; Lay, J. P.; 李嗣涔; 劉志文; Lin, Hao-Hsiung; 劉志文; Chen, S. L.; Lay, J. P.; 李嗣涔; 林浩雄; 劉志文; Chen, S. L.; Lay, J. P.; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1988 |
The hot electron effect in double heterojunction bipolar transistors: Theory and experiment
|
Chen, Chung-Zen; Lee, Si-Chen; Lin, Hao-Hsiung; Chen, Chung-Zen; Lee, Si-Chen; Lin, Hao-Hsiung |