|
"lin hao hsiung"的相關文件
顯示項目 26-50 / 306 (共13頁)
<< < 1 2 3 4 5 6 7 8 9 10 > >>
每頁顯示[10|25|50]項目
| 國立臺灣大學 |
2010 |
Effect of thermal annealing on the blue shift of energy gap and nitrogen rearrangement in GaAsSbN
|
Lin, Yan-Ting; Ma, Ta-Chun; Lin, Hao-Hsiung; Wu, Jiun-De; Huang, Ying-Sheng |
| 國立成功大學 |
2009-03-16 |
GaAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer
|
Lin, You-Ru; Lai, Yi-Feng; Liu, Chuan-Pu; Lin, Hao-Hsiung |
| 臺大學術典藏 |
2009-02-04T21:31:20Z |
The Transport Mechanism for Base Current in an AlGaAs/GaAs Heterojunction Bipolar Transistor
|
Lin, Hao-Hsiung;Lee, Si-Chen; Lee, Si-Chen; Lin, Hao-Hsiung |
| 臺大學術典藏 |
2009-02-04T19:26:22Z |
Evalution of DX-Center in Sn-Doped AlxGa1-xAs
|
Hwang, F. C.;Lee, H. C.;Lin, Hao-Hsiung;Lee, Si-Chen; Lee, H. C.; Lee, Si-Chen; Lin, Hao-Hsiung; Hwang, F. C. |
| 臺大學術典藏 |
2009-02-04T18:50:58Z |
Deep Level Analysis of MBE Grown InAlAs Strained Layers
|
Wu, C. W.; Lin, Hao-Hsiung; 林浩雄; Lee, T. L.; Liu, J. S.; Liu, J. S.; Lee, T. L.; Wu, C. W.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2009 |
Band alignment of InAs1-xSbx (0.05?x?0.13)/InAs0.67P0.23Sb0.10 heterostructures
|
Wu, Chen-Jun; Tsai, Gene; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2009 |
GaAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer
|
Lin, You-Ru; Lai, Yi-Feng; Liu, Chuan-Pu; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2008 |
Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers
|
Chen, Cheng-Yuan; Lee, Jia-Ren; Lu, Chien-Rong; Liu, Hsiang-Lin; Sun, Li-Wen; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2008 |
Incorporation behaviors of group V elements in GaAsSbN grown by gas-source molecular-beam epitaxy
|
Ma, Ta-Chun; Lin, Yan-Ting; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2008 |
Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy
|
Hsu, Hung-Pin; Huang, Yen-Neng; Huang, Ying-Sheng; Lin, Yang-Ting; Ma, Ta-Chun; Lin, Hao-Hsiung; Tiong, Kwong-Kau; Sitarek, Piotr; Misiewicz, Jan |
| 國立臺灣大學 |
2008 |
Photoluminescence of InAs0.04P0.67Sb0.29
|
Tsai, Gene; Wang, De-Lun; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2008 |
AlGaAs Ambient Light Detectors With a Human-Eye Spectral Response
|
Lin, Tzu-Chiang; Ma, Ta-Chun; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2008 |
Energy gap reduction in dilute nitride GaAsSbN
|
Lin, Yan-Ting; Ma, Ta-Chun; Chen, Tsung-Yi; Lin, Hao-Hsiung |
| 臺大學術典藏 |
2008 |
Incorporation behaviors of group V elements in GaAsSbN grown by gas-source molecular-beam epitaxy
|
Ma, Ta-Chun; Lin, Yan-Ting; Lin, Hao-Hsiung; Ma, Ta-Chun; Lin, Yan-Ting; Lin, Hao-Hsiung |
| 臺大學術典藏 |
2008 |
AlGaAs Ambient Light Detectors With a Human-Eye Spectral Response
|
Lin, Tzu-Chiang; Ma, Ta-Chun; Lin, Hao-Hsiung; Lin, Tzu-Chiang; Ma, Ta-Chun; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2007-05 |
Opposite Temperature Effects of Quantum-Dot Laser under Dual-Wavelength Operation
|
Fan, Hsueh-Shih; Su, Yi-Shin; Chu, Fei-Hung; Chang, Fu-Yu; Lin, Hao-Hsiung; Lin, Ching-Fuh |
| 國立臺灣大學 |
2007 |
Opposite Temperature Effects of Quantum-Dot Laser under Dual-Wavelength Operation
|
Fan, Hsueh-Shih; Su, Yi-Shin; Chu, Fei-Hung; Chang, Fu-Yu; Lin, Hao-Hsiung; Lin, Ching-Fuh |
| 國立臺灣大學 |
2007 |
InAsPSb quaternary alloy grown by gas source molecular beam epitaxy
|
Tsai, Gene; Wang, De-Lun; Wu, Chia-En; Wu, Chen-Jun; Lin, Yan-Ting; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2007 |
The dependence of terahertz radiation on the built-in electric field in semiconductor microstructures
|
Hwang, Jenn-Shyong; Lin, Hui-Ching; Chang, Chin-Kuo; Wang, Tai-Shen; Chang, Liang-Son; Chyi, Jen-Inn; Liu, Wei-Sheng; Chen, Shu-Han; Lin, Hao-Hsiung; Liu, Po-Wei |
| 國立臺灣大學 |
2007 |
Efficient generation of coherent acoustic phonons in (111) InGaAs/GaAs MQWs through piezoelectric effects
|
Wen, Yu-Chieh; Chou, Li-Chang; Lin, Hao-Hsiung; Gusev, Vitalyi; Lin, Kung-Hsuan; Sun, Chi-Kuang |
| 國立臺灣大學 |
2006 |
[1 1 1]B-oriented GaAsSb grown by gas source molecular beam epitaxy
|
Chou, Li-Chang; Lin, Yu-Ru; Wan, Cheng-Tien; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2006 |
InAs/InGaAs/GaAs Coupled Quantum Dot Laser with Predeposited InAs Seed Layer
|
Lee, Chi-Sen; Chang, Fu-Yu; Liu, Day-Shan; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2006 |
Compositional dependence of longitudinal sound velocities of piezoelectric (111) InxGa(1?x)As measured by picosecond ultrasonics
|
Wen, Yu-Chieh; Chou, Li-Chang; Lin, Hao-Hsiung; Lin, Kung-Hsuan; Kao, Tzeng-Fu; Sun, Chi-Kuang |
| 國立虎尾科技大學 |
2006 |
InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer
|
Lee, Chi-Sen;Chang, Fu-Yu;Liu, Day-Shan;Lin, Hao-Hsiung |
| 臺大學術典藏 |
2006 |
[1 1 1]B-oriented GaAsSb grown by gas source molecular beam epitaxy
|
Chou, Li-Chang; Lin, Yu-Ru; Wan, Cheng-Tien; Lin, Hao-Hsiung; Chou, Li-Chang; Lin, Yu-Ru; Wan, Cheng-Tien; Lin, Hao-Hsiung |
顯示項目 26-50 / 306 (共13頁)
<< < 1 2 3 4 5 6 7 8 9 10 > >>
每頁顯示[10|25|50]項目
|
