| 國立臺灣大學 |
2000-05 |
Growth and characterization of InAsN alloys
|
Wang, Jyh-Shyang; Lin, Hao-Hsiung; Sung, Li-Wei; Chen, Guan-Ru |
| 臺大學術典藏 |
2000-05 |
Growth and characterization of InAsN alloys
|
Wang, Jyh-Shyang; Lin, Hao-Hsiung; Sung, Li-Wei; Chen, Guan-Ru; Wang, Jyh-Shyang; Lin, Hao-Hsiung; Sung, Li-Wei; Chen, Guan-Ru |
| 國立臺灣大學 |
2000 |
GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer
|
Lee, Ching-Ting; Shyu, Kuo-Chuan; Lin, Iang-Jeng; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1999 |
Structural and optical properties of 0.98 μm InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy
|
Liu, Jin-Shung; Wang, Jyh-Shyang; Hsieh, K. Y.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1999 |
Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopy
|
Tsen, K. T.; Ferry, D. K.; Wang, Jye-Shyang; Huang, Chao-Hsiung; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1999 |
Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy
|
Wang, Jyh-Shyang; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1999 |
Structural and optical properties of 0.98 μm InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy
|
Liu, Jin-Shung; Wang, Jyh-Shyang; Hsieh, K. Y.; Lin, Hao-Hsiung; Liu, Jin-Shung; Wang, Jyh-Shyang; Hsieh, K. Y.; Lin, Hao-Hsiung |
| 國立成功大學 |
1998 |
An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor
|
Tsai, Jung-Hui; Cheng, Shiou-Ying; Laih, Lih-Wen; Liu, Wen-Chau; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1998 |
An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor
|
Tsai, Jung-Hui; Cheng, Shiou-Ying; Laih, Lih-Wen; Liu, Wen-Chau; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1998 |
Self-organized InAs/GaAs quantum dots grown on (1 0 0) misoriented substrates by molecular beam epitaxy
|
Chen, Ming-Chin; Liao, M. C.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1998 |
Very thin layers of TlP grown on InP using gas source molecular beam epitaxy
|
Liu, Jin-Shung; Wang, Jyh-Shyang; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1998 |
Very thin layers of TlP grown on InP using gas source molecular beam epitaxy
|
Liu, Jin-Shung; Wang, Jyh-Shyang; Lin, Hao-Hsiung; Liu, Jin-Shung; Wang, Jyh-Shyang; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1997-09 |
Photoluminescence study of the self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy
|
Chen, Ming-Chin; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1997-09 |
Photoluminescence study of the self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy
|
Chen, Ming-Chin; Lin, Hao-Hsiung; Chen, Ming-Chin; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1997-08 |
A Miniature MMIC Double Doubly Balanced Mixer Using Lumped Dual Balun for High Dynamic Receiver Application
|
Chiou, Hwann-Kaeo; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1997-08 |
Lumped-Element Compensated High/Low-Pass Balun Design for MMIC Double-Balanced Mixer
|
Chiou, Wann-Kaeo; Lin, Hao-Hsiung; Chang, Chi-Yang |
| 臺大學術典藏 |
1997-08 |
A Miniature MMIC Double Doubly Balanced Mixer Using Lumped Dual Balun for High Dynamic Receiver Application
|
Chiou, Hwann-Kaeo; Lin, Hao-Hsiung; Chiou, Hwann-Kaeo; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1997-08 |
Lumped-Element Compensated High/Low-Pass Balun Design for MMIC Double-Balanced Mixer
|
Chiou, Wann-Kaeo; Lin, Hao-Hsiung; Chang, Chi-Yang; Chiou, Wann-Kaeo; Lin, Hao-Hsiung; Chang, Chi-Yang |
| 國立臺灣大學 |
1997-03 |
Miniature MMIC star double balanced mixer using lumped dual balun
|
Chiou, Hwann-Kaeo; Juang, Yu-Ru; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1997 |
Pump-probe studies of carrier capture processes in semiconductor multiple-quantum-well waveguides
|
Huang, Jian-Jang; Huang, Ding-Wei; Chao, Chung-Yen; Li, Jiun-Haw; Yang, C.C.; Chen, Ming-Ching; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1996-04 |
An unified GSMBE growth model for GaInAsP on InP and GaAs
|
Liu, Jin-Shung; Lee, Tsuen-Lin; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1996-04 |
An unified GSMBE growth model for GaInAsP on InP and GaAs
|
Liu, Jin-Shung; Lee, Tsuen-Lin; Lin, Hao-Hsiung; Liu, Jin-Shung; Lee, Tsuen-Lin; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1996 |
Growth and characterization of AlGaAs/GaAs heterojunction bipolar transistor on GaAs (111)B substrate by molecular beam epitaxy
|
Lee, Tsuen-Lin; Chu, Wen-Ding; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1996 |
Low frequency noise characteristics of AlInAs/InGaAs heterojunction bipolar transistors
|
Jang, Sheng-Lyang; Chen, Way-Ming; Lin, Hao-Hsiung; Huang, Chao-Hsing |
| 國立臺灣大學 |
1996 |
On the recombination currents effect of heterostructure-emitter bipolar transistors (HEBTs)
|
Tsai, Jung-Hui; Laih, Lih-Wen; Shih, Hui-Jung; Liu, Wen-Chau; Lin, Hao-Hsiung |
