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显示项目 111-160 / 652 (共14页)
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机构 日期 题名 作者
國立交通大學 2014-12-08T15:44:20Z A novel thin-film transistor with self-aligned field induced drain Lin, HC; Yu, CM; Lin, CY; Yeh, KL; Huang, TY; Lei, TF
國立交通大學 2014-12-08T15:43:58Z Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain extension Lin, HC; Yeh, KL; Huang, RG; Lin, CY; Huang, TY
國立交通大學 2014-12-08T15:43:44Z Synthesis of novel acetal thia-cage compounds Wu, CY; Lin, HC; Wang, ZY; Wu, HJ
國立交通大學 2014-12-08T15:43:41Z Post-soft-breakdown characteristics of deep submicron NMOSFETs with ultrathin gate oxide Tsai, MY; Lin, HC; Lee, DY; Huang, TY
國立交通大學 2014-12-08T15:43:37Z Conduction mechanisms for off-state leakage current of Schottky barrier thin-film transistors Yeh, KL; Lin, HC; Huang, RG; Tsai, RW; Huang, TY
國立交通大學 2014-12-08T15:42:51Z Impact of thermal stability on the characteristics of complementary metal oxide semiconductor transistors with TiN metal gate Wang, MF; Huang, TY; Kao, YC; Lin, HC; Chang, CY
國立交通大學 2014-12-08T15:42:48Z Ambipolar Schottky-barrier TFTs Lin, HC; Yeh, KL; Huang, TY; Huang, RG; Sze, SM
國立交通大學 2014-12-08T15:42:37Z Enhanced negative-bias-temperature instability of P-channel metal-oxide-semiconductor transistors due to plasma charging damage Lee, DY; Lin, HC; Wang, MF; Tsai, MY; Huang, TY; Wang, TH
國立交通大學 2014-12-08T15:42:37Z Reduction of off-state leakage current in Schottky barrier thin-film transistors (SBTFT) by a field-induced drain Yeh, KL; Lin, HC; Huang, RG; Tsai, RW; Huang, TY
國立交通大學 2014-12-08T15:42:25Z Characteristics of polycrystalline silicon thin-film transistors with electrical source/drain extensions induced by a bottom sub-gate Yu, M; Lin, HC; Chen, GH; Huang, TY; Lei, TF
國立交通大學 2014-12-08T15:42:20Z Application of field-induced source/drain Schottky metal-oxide-semiconductor to fin-like body field-effect transistor Lin, HC; Wang, MF; Hou, FJ; Liu, JT; Huang, TY; Sze, SM
國立交通大學 2014-12-08T15:42:17Z Charge pumping profiling technique for the evaluation of plasma-charging-enhanced hot-carrier effect in short-N-channel metal-oxide-semiconductor field-effect transistors Chen, SJ; Chung, SSS; Lin, HC
國立交通大學 2014-12-08T15:42:06Z Self-aligned fabrication of thin-film transistors with field-induced drain Yu, CM; Lin, HC; Lin, CY; Yeh, KL; Huang, TY; Lei, TF
國立交通大學 2014-12-08T15:41:57Z Simultaneous etching of polysilicon materials with different doping types by low-damage transformer-coupled plasma technique Hung, CC; Lin, HC; Wang, MF; Huang, TY; Shih, HC
國立交通大學 2014-12-08T15:41:52Z Breakdown modes and their evolution in ultrathin gate oxide Lin, HC; Lee, DY; Huang, TY
國立交通大學 2014-12-08T15:41:22Z Ambipolar Schottky barrier silicon-on-insulator metal-oxide-semiconductor transistors Lin, HC; Wang, MF; Lu, CY; Huang, TY
國立交通大學 2014-12-08T15:41:20Z High-performance P-channel Schottky-barrier SOI FinFET featuring self-aligned PtSi source/drain and electrical junctions Lin, HC; Wang, MF; Hou, FJ; Lin, HN; Lu, CY; Liu, JT; Huang, TY
國立交通大學 2014-12-08T15:41:10Z Fabrication and characterization of Schottky barrier polysilicon thin-film transistors with excimer-laser crystallized channel Yeh, KL; Lin, HC; Tsai, RW; Lee, MH; Huang, TY
國立交通大學 2014-12-08T15:41:01Z Enhanced negative substrate bias degradation in nMOSFETs with ultrathin plasma nitrided oxide Perng, TH; Chien, CH; Chen, CW; Lin, HC; Chang, CY; Huang, TY
國立交通大學 2014-12-08T15:40:05Z H-2 and NH3 plasma passivation on poly-Si TFTs with bottom-sub-gate induced electrical junctions Yu, CM; Lin, HC; Huang, TY; Lei, TF
國立交通大學 2014-12-08T15:39:42Z Effects of process and gate doping species on negative-bias-temperature instability of p-channel MOSFETs Lee, DY; Huang, TY; Lin, HC; Chiang, WJ; Huang, GW; Wanga, T
國立交通大學 2014-12-08T15:39:25Z Hot carrier degradations of dynamic threshold silicon on insulator p-type metal-oxide-semiconductor field effect transistors Chao, TS; Lee, YJ; Huang, CY; Lin, HC; Li, YM; Huang, TY
國立交通大學 2014-12-08T15:39:08Z Synthesis and second-order nonlinearities of chiral prolinol-substituted chromophores Chou, SSP; Yu, CY; Lin, HC; Yang, PK
國立交通大學 2014-12-08T15:39:04Z Effect of polar substituents on the properties of 1,3,4-oxadiazole-based liquid crystalline materials containing asymmetric cores Sung, HH; Lin, HC
國立交通大學 2014-12-08T15:38:50Z Procedure for supplier selection based on C-pm applied to super twisted nematic liquid crystal display processes Pearn, WL; Wu, CW; Lin, HC
國立交通大學 2014-12-08T15:38:42Z Thermal properties, miscibility and specific interactions in comparison of linear and star poly(methyl methacrylate) blend with phenolic Huang, CF; Kuo, SW; Lin, HC; Chen, JK; Chen, YK; Xu, HY; Chang, FC
國立交通大學 2014-12-08T15:37:26Z Novel alternating fluorene-based conjugated polymers containing oxadiazole pendants with various terminal groups Sung, HH; Lin, HC
國立交通大學 2014-12-08T15:37:13Z CoTiO3 high-kappa, dielectrics on HSG for DRAM applications Chao, TS; Ku, WM; Lin, HC; Landheer, D; Wang, YY; Mori, Y
國立交通大學 2014-12-08T15:37:06Z Determination of effective density-of-states using a novel Schottky barrier poly-Si thin-film transistor Lin, HC; Lee, MH; Yeh, KL; Huang, TY
國立交通大學 2014-12-08T15:37:06Z Localized lateral growth of single-walled carbon nanotubes for field-effect transistors by a cobalt-mix-TEOS method Chen, BH; Lo, PY; Wei, JH; Tsai, MJ; Hwang, CL; Chao, TS; Lin, HC; Huang, TY
國立交通大學 2014-12-08T15:27:25Z A model for photoresist-induced charging damage in ultra-thin gate oxides Lin, HC; Chien, CH; Wang, MF; Huang, TY; Chang, CY
國立交通大學 2014-12-08T15:27:16Z The effects of isoelectronic in-doping in GaN films grown by MOCVD Shu, CK; Ou, J; Lin, HC; Pan, YC; Lee, WH; Chen, WK; Lee, MC
國立交通大學 2014-12-08T15:27:09Z Breakdown characteristics of ultra-thin gate oxides caused by plasma charging Chen, CC; Lin, HC; Chang, CY; Chien, CH; Huang, TY
國立交通大學 2014-12-08T15:27:02Z Plasma process induced damage in sputtered TiN metal gate capacitors with ultra-thin nitrided oxide Chen, CC; Lin, HC; Chang, CY; Chao, TS; Huang, SC; Wu, WF; Huang, TY; Liang, MS
國立交通大學 2014-12-08T15:27:02Z Improved plasma charging immunity in ultra-thin gate oxide with fluorine and nitrogen implantation Chen, CC; Lin, HC; Chang, CY; Huang, CC; Chien, CH; Huang, TY; Liang, MS
國立交通大學 2014-12-08T15:26:54Z Thermal stability of PVD TiN gate and its impacts on characteristics of CMOS transistors Wang, MF; Kao, YC; Huang, TY; Lin, HC; Chang, CY
國立交通大學 2014-12-08T15:26:48Z New experimental evidences of the plasma charging enhanced hot carrier effect and its impact on surface channel CMOS devices Chen, SJ; Lin, CC; Chung, SS; Lin, HC
國立交通大學 2014-12-08T15:26:36Z Process and doping species dependence of negative-bias-temperature instability for p-channel MOSFETs Lee, DY; Lin, HC; Chiang, WJ; Lu, WT; Huang, GW; Huang, TY; Wang, T
國立交通大學 2014-12-08T15:26:29Z Process-related reliability issues toward sub-100 nm device regime Chang, CY; Chao, TS; Lin, HC; Chien, CH
國立交通大學 2014-12-08T15:26:17Z Effects of plasma treatments on the characteristics of poly-Si thin-film transistors having electrical junctions induced by a bottom sub-gate Yu, CM; Lin, HC; Lei, TF; Huang, TY
國立交通大學 2014-12-08T15:26:17Z Characteristics of Schottky barrier poly-Si thin film transistors with excimer laser annealing treatment Yeh, KL; Lin, HC; Tsai, RW; Lee, MH; Huang, TY
國立交通大學 2014-12-08T15:26:17Z Impacts of HF etching on ultra-thin core gate oxide integrity in dual gate oxide CMOS technology Lee, DY; Lin, HC; Chen, CL; Huang, TY; Wang, TH; Lee, TL; Chen, SC; Liang, MS
國立交通大學 2014-12-08T15:26:15Z FGS-based video streaming test bed for MPEG-21 universal multimedia access with digital item adaptation Wang, CN; Tsai, CY; Lin, HC; Chaung, HC; Lin, YC; Chen, JH; Tong, KL; Chang, FC; Tsai, CJ; Lee, SY; Chiang, TH; Hang, HM
國立交通大學 2014-12-08T15:25:58Z Influence of local information on social simulations under the small-world model Lin, HC; Huang, CY; Sun, CT
國立交通大學 2014-12-08T15:25:43Z A novel methodology for extracting effective density-of-states in poly-Si thin-film transistors Lin, HC; Yeh, KL; Lee, MH; Su, YC; Huang, TY; Shen, SW; Lin, HY
國立交通大學 2014-12-08T15:25:40Z The impact of uniaxial strain engineering on channel backscattering in nanoscale MOSFETs Lin, HN; Chen, HW; Ko, CH; Ge, CH; Lin, HC; Huang, TY; Lee, WC; Tang, DD
國立交通大學 2014-12-08T15:25:11Z Channel backscattering characteristics of strained PMOSFETs with embedded SiGe source/drain Lin, HN; Chen, HW; Ko, CH; Ge, CH; Lin, HC; Huang, TY; Lee, WC
國立交通大學 2014-12-08T15:20:15Z Influence of local information on social simulations in small-world network models Huang, CY; Sun, CT; Lin, HC
國立交通大學 2014-12-08T15:18:49Z Synthesis and characterization of poly(fluorene)-based copolymers containing various 1,3,4-oxadiazole pendants Sung, HH; Lin, HC
國立交通大學 2014-12-08T15:18:31Z A simple and low-cost method to fabricate TFTs with poly-Si nanowire channel Lin, HC; Lee, MH; Su, CJ; Huang, TY; Lee, CC; Yang, YS

显示项目 111-160 / 652 (共14页)
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