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"lin hc"的相關文件
顯示項目 141-150 / 652 (共66頁)
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| 國立交通大學 |
2014-12-08T15:27:25Z |
A model for photoresist-induced charging damage in ultra-thin gate oxides
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Lin, HC; Chien, CH; Wang, MF; Huang, TY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:27:16Z |
The effects of isoelectronic in-doping in GaN films grown by MOCVD
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Shu, CK; Ou, J; Lin, HC; Pan, YC; Lee, WH; Chen, WK; Lee, MC |
| 國立交通大學 |
2014-12-08T15:27:09Z |
Breakdown characteristics of ultra-thin gate oxides caused by plasma charging
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Chen, CC; Lin, HC; Chang, CY; Chien, CH; Huang, TY |
| 國立交通大學 |
2014-12-08T15:27:02Z |
Plasma process induced damage in sputtered TiN metal gate capacitors with ultra-thin nitrided oxide
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Chen, CC; Lin, HC; Chang, CY; Chao, TS; Huang, SC; Wu, WF; Huang, TY; Liang, MS |
| 國立交通大學 |
2014-12-08T15:27:02Z |
Improved plasma charging immunity in ultra-thin gate oxide with fluorine and nitrogen implantation
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Chen, CC; Lin, HC; Chang, CY; Huang, CC; Chien, CH; Huang, TY; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:54Z |
Thermal stability of PVD TiN gate and its impacts on characteristics of CMOS transistors
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Wang, MF; Kao, YC; Huang, TY; Lin, HC; Chang, CY |
| 國立交通大學 |
2014-12-08T15:26:48Z |
New experimental evidences of the plasma charging enhanced hot carrier effect and its impact on surface channel CMOS devices
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Chen, SJ; Lin, CC; Chung, SS; Lin, HC |
| 國立交通大學 |
2014-12-08T15:26:36Z |
Process and doping species dependence of negative-bias-temperature instability for p-channel MOSFETs
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Lee, DY; Lin, HC; Chiang, WJ; Lu, WT; Huang, GW; Huang, TY; Wang, T |
| 國立交通大學 |
2014-12-08T15:26:29Z |
Process-related reliability issues toward sub-100 nm device regime
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Chang, CY; Chao, TS; Lin, HC; Chien, CH |
| 國立交通大學 |
2014-12-08T15:26:17Z |
Effects of plasma treatments on the characteristics of poly-Si thin-film transistors having electrical junctions induced by a bottom sub-gate
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Yu, CM; Lin, HC; Lei, TF; Huang, TY |
顯示項目 141-150 / 652 (共66頁)
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