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"lin hc"的相關文件
顯示項目 181-190 / 652 (共66頁)
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| 國立交通大學 |
2014-12-08T15:05:16Z |
ESTIMATING PIT-EXCAVATION VOLUME USING CUBIC SPLINE VOLUME FORMULA
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CHEN, CS; LIN, HC |
| 國立交通大學 |
2014-12-08T15:04:52Z |
RAMAN-SPECTRA OF THE MIXED-CRYSTALS RUSXSE2-X
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LIN, HC; LEE, MC; LIN, SS; HUANG, YS |
| 國立交通大學 |
2014-12-08T15:04:21Z |
ANOMALOUS DOPING BEHAVIOR OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON DEPOSITED BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
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LIN, HC; LIN, HY; CHANG, CY; LEI, TF; WANG, PJ; DENG, RC; LIN, JD; CHAO, CY |
| 國立交通大學 |
2014-12-08T15:04:21Z |
GROWTH OF UNDOPED POLYCRYSTALLINE SI BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SYSTEM
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LIN, HC; LIN, HY; CHANG, CY; LEI, TF; WANG, PJ; CHAO, CY |
| 國立交通大學 |
2014-12-08T15:04:15Z |
EFFECTS OF ANNEALING CONDITIONS ON THE PHASE-STABILITY AND SUPERCONDUCTING PROPERTIES OF DC SPUTTERING TLBACACUO THIN-FILMS
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LIN, HC; LI, MH; LI, JJ; JANG, FI; FU, CM; JUANG, JY; UEN, TM; GOU, YS |
| 國立交通大學 |
2014-12-08T15:04:11Z |
LOW-TEMPERATURE EPITAXIAL-GROWTH OF SILICON AND SILICON-GERMANIUM ALLOY BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
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JUNG, TG; CHANG, CY; CHANG, TC; LIN, HC; WANG, T; TSAI, WC; HUANG, GW; WANG, PJ |
| 國立交通大學 |
2014-12-08T15:04:07Z |
DEPOSITION OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON FILMS AT REDUCED PRESSURES
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LIN, HC; LIN, HY; CHANG, CY; LEI, TF; WANG, PJ; DENG, RC; LIN, JD |
| 國立交通大學 |
2014-12-08T15:04:02Z |
LOW-TEMPERATURE GROWTH OF SILICON-BORON LAYER BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
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CHEN, TP; LEI, TF; LIN, HC; CHANG, CY; HSIEH, WY; CHEN, LJ |
| 國立交通大學 |
2014-12-08T15:03:50Z |
EFFECT OF BORON DOPING ON THE STRUCTURAL-PROPERTIES OF POLYCRYSTALLINE SILICON FILMS GROWN AT REDUCED PRESSURES
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LIN, HC; LIN, HY; CHANG, CY; JUNG, TG; WANG, PJ; DENG, RC; LIN, JD |
| 國立交通大學 |
2014-12-08T15:03:48Z |
EFFECTS OF SIH4, GEH4, AND B2H6 ON THE NUCLEATION AND DEPOSITION OF POLYCRYSTALLINE SI1-XGEX FILMS
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LIN, HC; CHANG, CY; CHEN, WH; TSAI, WC; CHANG, TC; JUNG, TG; LIN, HY |
顯示項目 181-190 / 652 (共66頁)
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