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Showing items 176-200 of 652 (27 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:16:46Z |
Synthesis and characterization of light-emitting oligo(p-phenylene-vinylene)s and polymeric derivatives containing three- and five-conjugated phenylene rings. II. Electro-optical properties and optimization of PLED performance
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Lin, HC; Tsai, CM; Tao, YT |
| 國立交通大學 |
2014-12-08T15:16:33Z |
Synthesis and characterization of rod-coil polymers based on poly(ethylene oxide)s sand novel luminescent aromatic cores
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Lin, HC; Lee, KW; Tsai, CM; Wei, KH |
| 國立交通大學 |
2014-12-08T15:16:20Z |
Spatially resolving the hot carrier degradations of poly-Si thin-film transistors using a novel test structure
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Lin, HC; Lee, MH; Chang, KH |
| 國立交通大學 |
2014-12-08T15:16:17Z |
High-performance TFTs with Si nanowire channels enhanced by metal-induced lateral crystallization
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Su, CJ; Lin, HC; Huang, TY |
| 國立交通大學 |
2014-12-08T15:06:16Z |
ADAPTIVE LOAD BALANCING FOR PARALLEL QUEUES WITH TRAFFIC CONSTRAINTS
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YUM, TP; LIN, HC |
| 國立交通大學 |
2014-12-08T15:05:16Z |
ESTIMATING PIT-EXCAVATION VOLUME USING CUBIC SPLINE VOLUME FORMULA
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CHEN, CS; LIN, HC |
| 國立交通大學 |
2014-12-08T15:04:52Z |
RAMAN-SPECTRA OF THE MIXED-CRYSTALS RUSXSE2-X
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LIN, HC; LEE, MC; LIN, SS; HUANG, YS |
| 國立交通大學 |
2014-12-08T15:04:21Z |
ANOMALOUS DOPING BEHAVIOR OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON DEPOSITED BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
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LIN, HC; LIN, HY; CHANG, CY; LEI, TF; WANG, PJ; DENG, RC; LIN, JD; CHAO, CY |
| 國立交通大學 |
2014-12-08T15:04:21Z |
GROWTH OF UNDOPED POLYCRYSTALLINE SI BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SYSTEM
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LIN, HC; LIN, HY; CHANG, CY; LEI, TF; WANG, PJ; CHAO, CY |
| 國立交通大學 |
2014-12-08T15:04:15Z |
EFFECTS OF ANNEALING CONDITIONS ON THE PHASE-STABILITY AND SUPERCONDUCTING PROPERTIES OF DC SPUTTERING TLBACACUO THIN-FILMS
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LIN, HC; LI, MH; LI, JJ; JANG, FI; FU, CM; JUANG, JY; UEN, TM; GOU, YS |
| 國立交通大學 |
2014-12-08T15:04:11Z |
LOW-TEMPERATURE EPITAXIAL-GROWTH OF SILICON AND SILICON-GERMANIUM ALLOY BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
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JUNG, TG; CHANG, CY; CHANG, TC; LIN, HC; WANG, T; TSAI, WC; HUANG, GW; WANG, PJ |
| 國立交通大學 |
2014-12-08T15:04:07Z |
DEPOSITION OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON FILMS AT REDUCED PRESSURES
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LIN, HC; LIN, HY; CHANG, CY; LEI, TF; WANG, PJ; DENG, RC; LIN, JD |
| 國立交通大學 |
2014-12-08T15:04:02Z |
LOW-TEMPERATURE GROWTH OF SILICON-BORON LAYER BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
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CHEN, TP; LEI, TF; LIN, HC; CHANG, CY; HSIEH, WY; CHEN, LJ |
| 國立交通大學 |
2014-12-08T15:03:50Z |
EFFECT OF BORON DOPING ON THE STRUCTURAL-PROPERTIES OF POLYCRYSTALLINE SILICON FILMS GROWN AT REDUCED PRESSURES
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LIN, HC; LIN, HY; CHANG, CY; JUNG, TG; WANG, PJ; DENG, RC; LIN, JD |
| 國立交通大學 |
2014-12-08T15:03:48Z |
EFFECTS OF SIH4, GEH4, AND B2H6 ON THE NUCLEATION AND DEPOSITION OF POLYCRYSTALLINE SI1-XGEX FILMS
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LIN, HC; CHANG, CY; CHEN, WH; TSAI, WC; CHANG, TC; JUNG, TG; LIN, HY |
| 國立交通大學 |
2014-12-08T15:03:46Z |
FABRICATION OF P-CHANNEL POLYCRYSTALLINE SI1-XGEX THIN-FILM TRANSISTORS BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
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LIN, HC; JUNG, TG; LIN, HY; CHANG, CY; CHEN, LP |
| 國立交通大學 |
2014-12-08T15:03:44Z |
CHARACTERIZATION OF THE SI/SIGE HETEROJUNCTION DIODE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
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JUNG, TG; CHANG, CY; LIU, CS; CHANG, TC; LIN, HC; TSAI, WC; HUANG, GW; CHEN, LP |
| 國立交通大學 |
2014-12-08T15:03:32Z |
CHARACTERISTICS OF BORON-DIFFUSION IN POLYSILICON SILICON SYSTEMS WITH A THIN SI-B LAYER AS DIFFUSION SOURCE
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CHEN, TP; LEI, TF; LIN, HC; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:29Z |
GLOBAL EXISTENCE, ASYMPTOTICS AND UNIQUENESS FOR THE REFLECTION KERNEL OF THE ANGULARLY SHIFTED TRANSPORT-EQUATION
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JUANG, J; LIN, HC; NELSON, P |
| 國立交通大學 |
2014-12-08T15:03:19Z |
FABRICATION AND PROPERTIES OF DC-SPUTTERED TL-1223 SUPERCONDUCTING THIN-FILMS
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JUANG, JY; HORNG, JH; LIN, HC; WANG, SJ; FU, CM; WU, KH; UEN, TM; GOU, YS |
| 國立交通大學 |
2014-12-08T15:03:15Z |
EPITAXY OF SI1-XGEX BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4
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CHEN, LP; CHOU, TC; TSAI, WC; HUANG, GW; TSENG, HC; LIN, HC; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:13Z |
ABRUPTNESS OF GE COMPOSITION AT THE SI/SIGE INTERFACE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
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TSAI, WC; CHANG, CY; JUNG, TG; LIOU, TS; HUANG, GW; CHANG, TC; CHEN, LP; LIN, HC |
| 國立交通大學 |
2014-12-08T15:03:08Z |
GROWTH AND PROPERTIES OF SUBMILLIMETER SINGLE GRAIN TL2BA2CA2CU3O10+X SUPERCONDUCTING THIN-FILMS
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LIN, HC; UEN, TM; LIU, CK; JUANG, JY; WU, KH; GOU, YS |
| 國立交通大學 |
2014-12-08T15:03:03Z |
LOW-TEMPERATURE GROWTH OF SILICON-BORON LAYER AS SOLID DIFFUSION SOURCE FOR POLYSILICON CONTACTED P(+)-N SHALLOW JUNCTION
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LEI, TF; CHEN, TP; LIN, HC; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:01Z |
CHARACTERISTICS OF POLYCRYSTALLINE FILMS GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SYSTEM
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LIN, HY; LEI, TF; LIN, HC; CHANG, CY; TWU, RC; DENG, RC; LIN, JD |
Showing items 176-200 of 652 (27 Page(s) Totally)
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