| 國立交通大學 |
2014-12-08T15:36:34Z |
Electrical characteristics of amorphous In-Ga-Zn-O thin-film transistors prepared by radio frequency magnetron sputtering with varying oxygen flows
|
Lee, Yih-Shing; Yen, Tung-Wei; Lin, Cheng-I; Lin, Horng-Chih; Yeh, Yun |
| 國立交通大學 |
2014-12-08T15:36:25Z |
Fabrication of tri-gated junctionless poly-Si transistors with I-line based lithography
|
Lin, Cheng-I; Lee, Ko-Hui; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:36:25Z |
Gate-all-around floating-gate memory device with triangular poly-Si nanowire channels
|
Tsai, Jung-Ruey; Lee, Ko-Hui; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:36:24Z |
Implementation of Film Profile Engineering in the Fabrication of ZnO Thin-Film Transistors
|
Lyu, Rong-Jhe; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:36:23Z |
Effects of Ga2O3 deposition power on electrical properties of cosputtered In-Ga-Zn-O semiconductor films and thin-film transistors
|
Lee, Yih-Shing; Chang, Chih-Hsiang; Lin, Yuan-Che; Lyu, Rong-Jhe; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:36:06Z |
Fabrication and characterization of field-effect transistors with suspended-nanowire channels
|
Kuo, Chia-Hao; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:36:06Z |
The effects of channel doping concentration for n-type junction-less double-gate poly-Si nanostrip transistors
|
Liu, Keng-Ming; Peng, Fan-I; Peng, Kang-Ping; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:35:08Z |
Novel gate-all-around polycrystalline silicon nanowire memory device with HfAlO charge-trapping layer
|
Lee, Ko-Hui; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:33:57Z |
Investigation of p-type junction-less independent double-gate poly-Si nano-strip transistors
|
Liu, Keng-Ming; Lin, Zer-Ming; Wu, Jiun-Peng; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:33:46Z |
Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfOx RRAM devices
|
Zhong, Chia-Wen; Tzeng, Wen-Hsien; Liu, Kou-Chen; Lin, Horng-Chih; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:32:59Z |
Low-voltage high-speed programming/erasing floating-gate memory device with gate-all-around polycrystalline silicon nanowire
|
Lee, Ko-Hui; Tsai, Jung-Ruey; Chang, Ruey-Dar; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:32:31Z |
Performance Improvement in RF LDMOS Transistors Using Wider Drain Contact
|
Chen, Kun-Ming; Chen, Bo-Yuan; Chiu, Chia-Sung; Huang, Guo-Wei; Chen, Chun-Hao; Lin, Horng-Chih; Huang, Tiao-Yuan; Chen, Ming-Yi; Yang, Yu-Chi; Jaw, Brenda; Wang, Kai-Li |
| 國立交通大學 |
2014-12-08T15:32:31Z |
Fabrication of High-Performance ZnO Thin-Film Transistors With Submicrometer Channel Length
|
Lin, Horng-Chih; Lyu, Rong-Jhe; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:31:57Z |
Channel Thickness Effect on High-Frequency Performance of Poly-Si Thin-Film Transistors
|
Chen, Kun-Ming; Tsai, Tzu-I; Lin, Ting-Yao; Lin, Horng-Chih; Chao, Tien-Sheng; Huang, Guo-Wei; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:31:35Z |
A New Methodology for Probing the Electrical Properties of Heavily Phosphorous-Doped Polycrystalline Silicon Nanowires
|
Lin, Horng-Chih; Lin, Zer-Ming; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:30:52Z |
Impacts of Nanocrystal Location on the Operation of Trap-Layer-Engineered Poly-Si Nanowired Gate-All-Around SONOS Memory Devices
|
Luo, Cheng-Wei; Lin, Horng-Chih; Lee, Ko-Hui; Chen, Wei-Chen; Hsu, Hsing-Hui; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:30:35Z |
Novel Method for Fabrication of Tri-Gated Poly-Si Nanowire Field-Effect Transistors With Sublithographic Channel Dimensions
|
Lee, Ko-Hui; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:30:32Z |
Characterisation of a suspended nanowire channel thin-film transistor with sub-100 nm air gap
|
Kuo, Chia-Hao; Hsu, Chia-Wei; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:30:25Z |
Characteristics of Planar Junctionless Poly-Si Thin-Film Transistors With Various Channel Thickness
|
Lin, Horng-Chih; Lin, Cheng-I; Lin, Zer-Ming; Shie, Bo-Shiuan; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:29:51Z |
A Novel Charge-Trapping-Type Memory With Gate-All-Around Poly-Si Nanowire and HfAlO Trapping Layer
|
Lee, Ko-Hui; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:29:42Z |
Improved Performance of NILC Poly-Si Nanowire TFTs by Using Ni-Gettering
|
Wang, Bau-Ming; Yang, Tzu-Ming; Wu, YewChung Sermon; Su, Chun-Jung; Lin, Horng-Chih |
| 國立交通大學 |
2014-12-08T15:28:34Z |
Investigations of an Independent Double-Gated Polycrystalline Silicon Nanowire Thin Film Transistor for Nonvolatile Memory Operations
|
Chen, Wei-Chen; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:28:34Z |
Characterizations of polycrystalline silicon nanowire thin-film transistors enhanced by metal-induced lateral crystallization
|
Su, Chun-Jung; Huang, Yu-Feng; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:28:11Z |
Low-Operating-Voltage Ultrathin Junctionless Poly-Si Thin-Film Transistor Technology for RF Applications
|
Tsai, Tzu-I; Chen, Kun-Ming; Lin, Horng-Chih; Lin, Ting-Yao; Su, Chun-Jung; Chao, Tien-Sheng; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:25:06Z |
DC and AC NBTI stresses in pMOSFETs with PE-SiN capping
|
Lu, Chia-Yu; Lin, Horng-Chih; Chang, Yi-Feng; Huang, Tiao-Yuan |
