| 國立交通大學 |
2020-10-05T02:01:27Z |
Self-organized Pairs of Ge Double Quantum Dots with Tunable Sizes and Spacings Enable Room-Temperature Operation of Qubit and Single-Electron Devices
|
Peng, Kang-Ping; Chen, Ching-Lun; Tang, Ying-Tsan; Kuo, David; George, Thomas; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2020-10-05T02:00:30Z |
A Platform with Exquisite Film Profile Engineering in Oxide-Based Thin-Film Transistors for More-than-Moore Applications
|
Lin, Horng-Chih; Huang, Yu-An |
| 國立交通大學 |
2020-10-05T01:59:51Z |
Coordinated and Simultaneous Formation of Paired Ge Quantum Dots by Thermal Oxidation of Designer Poly-SiGe Spacer Structures
|
Chen, Han-Yu; Peng, Kang-Ping; George, Thomas; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2020-07-01T05:22:11Z |
Trapping Depth and Transition Probability of Four-Level Random Telegraph Noise in a Gate-All-Around Poly-Si Nanowire Transistor
|
Change, You-Tai; Tsai, Yueh-Lin; Peng, Kang-Ping; Su, Chun-Jung; Li, Pei-Wen; Lin, Horng-Chih |
| 國立交通大學 |
2020-07-01T05:21:20Z |
Nitride-stressor and quantum-size engineering in Ge quantum-dot photoluminescence wavelength and exciton lifetime
|
Kuo, Yu-Hong; Chiu, Shih-Hsuan; Tien, Che-Wei; Lin, Sheng-Di; Chang, Wen-Hao; George, Thomas; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2020-05-05T00:02:22Z |
Improving breakdown voltage for 120 V level up shifter by using vertical and lateral assisted depletion layers in 0.35 mu m CMOS technology
|
Chen, Po-An; Lin, Kuang-Lun; Lin, Horng-Chih; Ningaraju, Vivek |
| 國立交通大學 |
2020-05-05T00:02:22Z |
Study on random telegraph noise of high-idmetal-gate gate-all-around poly-Si nanowire transistors
|
Lin, Horng-Chih; Chang, You-Tai; Tsai, Yueh-Lin; Peng, Kang-Ping; Su, Chun-Jung; Li, Pei-Wen |
| 國立交通大學 |
2020-05-05T00:02:22Z |
A novel photoresist-based film-profile engineering scheme for fabricating double-gated, recess-channel IGZO thin-film transistors
|
Lin, Horng-Chih; Su, Chun-Jung; Li, Pei-Wen; Meng, Yu-Chiao; Huang, Yu-An; Peng, Kang-Pin |
| 國立交通大學 |
2020-01-02T00:03:29Z |
A Novel Three-Dimensional Submicron ZnO Inverter Technology with Refined Contact Design
|
Lin, Horng-Chih; Kuan, Chin-I |
| 國立交通大學 |
2020-01-02T00:03:29Z |
Feasibility of Ge double quantum dots with high symmetry and tunability in size and inter-dot spacing
|
Peng, Kang-Ping; Huang, Tsung-Lin; George, Thomas; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2020-01-02T00:03:29Z |
Structual Design of T-gate, Air-spacer Poly-Si TFTs for RF applications
|
Huang, Yu-An; Yeh, Yu-Hsiang; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2020-01-02T00:03:27Z |
Characterization of Four-Level Random Telegraph Noise in a Gate-All-Around Poly-Si Nanowire Transistor
|
Chang, You-Tai; Li, Pei-Wen; Lin, Horng-Chih |
| 國立交通大學 |
2019-09-02T07:46:20Z |
Ge nanodot-mediated densification and crystallization of low-pressure chemical vapor deposited Si3N4 for advanced complementary metal-oxide-semiconductor photonics and electronics applications
|
Peng, Kang-Ping; Huang, Tsung Lin; George, Tom; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2019-09-02T07:46:20Z |
Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe
|
Huang, Tsung-Lin; Peng, Kang-Ping; Chen, Ching-Lun; Lin, Horng-Chih; George, Tom; Li, Pei-Wen |
| 國立交通大學 |
2019-06-03T01:08:38Z |
Film-profile-engineered ZnO thin-film transistor with gate/drain offset for high-voltage operation
|
Wu, Ming-Hung; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2019-05-02T00:25:51Z |
Submicrometer p-Type SnO Thin-Film Transistors Fabricated by Film Profile Engineering Method
|
Wu, Ming-Hung; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2019-04-03T06:44:24Z |
Fabrication and Characterization of Film Profile Engineered ZnO TFTs With Discrete Gates
|
Lyu, Rong-Jhe; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2019-04-03T06:42:03Z |
Very large photoresponsiviy and high photocurrent linearity for Ge-dot/SiO2/SiGe photoMOSFETs under gate modulation
|
Kuo, Ming-Hao; Hong, Po-Yu; Liu, Ping-Che; Lee, Meng-Chun; Lin, Horng-Chih; George, Tom; Li, Pei-Wen |
| 國立交通大學 |
2019-04-03T06:35:32Z |
High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects
|
Kuo, Ming-Hao; Lee, Meng-Chun; Lin, Horng-Chih; George, Tom; Li, Pei-Wen |
| 國立交通大學 |
2019-04-02T06:04:21Z |
A New High Voltage IC with Robust Isolation Design
|
Ningaraju, Vivek; Lin, Horng-Chih; Chen, Po-An; Wen, Jiin-Shiarng |
| 國立交通大學 |
2019-04-02T06:04:21Z |
Study of the Long-Term Electrical Stability of InGaZnO 3-D Film-Profile-Engineered Inverters
|
Kuan, Chin-I; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2019-04-02T06:04:21Z |
ZnON Contacts Enabling High-performance 3-D InGaZnO Inverters
|
Kuan, Chin-I; Peng, Kang-Ping; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2019-04-02T06:00:46Z |
Electrical characteristics of amorphous In-Ga-Zn-O thin-film transistors prepared by radio frequency magnetron sputtering with varying oxygen flows
|
Lee, Yih-Shing; Yen, Tung-Wei; Lin, Cheng-I; Lin, Horng-Chih; Yeh, Yun |
| 國立交通大學 |
2019-04-02T06:00:15Z |
Effect of Ni residues on the performance and the uniformity of nickel-induced lateral crystallization polycrystalline silicon nanowire thin-film transistors
|
Wang, Bau-Ming; Yang, Tzu-Ming; Wu, YewChung Sermon; Su, Chun-Jung; Lin, Horng-Chih |
| 國立交通大學 |
2019-04-02T05:59:31Z |
A comparison of plasma-induced damage on the reliability between high-k/metal-gate and SiO2/poly-gate complementary metal oxide semiconductor technology
|
Weng, Wu-Te; Lee, Yao-Jen; Lin, Horng-Chih; Huang, Tiao-Yuan |
