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"lin horng chih"的相關文件
顯示項目 176-200 / 232 (共10頁) << < 1 2 3 4 5 6 7 8 9 10 > >> 每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:24:26Z |
A Novel Double-gated Nanowire TFT and Investigation of Its Size Dependency
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Chen, Wei-Chen; Lin, Chuan-Ding; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:24:06Z |
Low-temperature poly-Si nanowire junctionless devices with gate-all-around TiN/Al2O3 stack structure using an implant-free technique
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Su, Chun-Jung; Tsai, Tzu-I; Lin, Horng-Chih; Huang, Tiao-Yuan; Chao, Tien-Sheng |
| 國立交通大學 |
2014-12-08T15:23:38Z |
Characteristics of n-Type Asymmetric Schottky-Barrier Transistors with Silicided Schottky-Barrier Source and Heavily n-Type Doped Channel and Drain
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Lin, Zer-Ming; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:23:36Z |
A Novel Scheme for Fabricating CMOS Inverters With Poly-Si Nanowire Channels
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Kuo, Chia-Hao; Lin, Horng-Chih; Lee, I-Che; Cheng, Huang-Chung; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:22:54Z |
Analytical Model of Subthreshold Current and Threshold Voltage for Fully Depleted Double-Gated Junctionless Transistor
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Lin, Zer-Ming; Lin, Horng-Chih; Liu, Keng-Ming; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:22:53Z |
A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires
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Su, Chun-Jung; Su, Tuan-Kai; Tsai, Tzu-I; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:22:31Z |
The Degradation of MILC P-Channel Poly-Si TFTs under Dynamic Hot-Carrier Stress Using a Novel Test Structure
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Lin, Cheng-I; Hong, Wen-Chiang; Lin, Tin-Fu; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:22:23Z |
Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin film
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Tzeng, Wen-Hsien; Zhong, Chia-Wen; Liu, Kou-Chen; Chang, Kow-Ming; Lin, Horng-Chih; Chan, Yi-Chun; Kuo, Chun-Chih; Tsai, Feng-Yu; Tseng, Ming Hong; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:21:54Z |
Performance Enhancement of Thin-Film Transistors With Suspended Poly-Si Nanowire Channels by Embedding Silicon Nanocrystals in Gate Nitride
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Kuo, Chia-Hao; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:21:15Z |
Relationships between the crystalline phase of an IGZO target and electrical properties of a-IGZO channel film
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Lee, Yih-Shing; Dai, Zuo-Ming; Lin, Cheng-I; Lin, Horng-Chih |
| 國立交通大學 |
2014-12-08T15:21:10Z |
Characteristics of n-Type Junctionless Poly-Si Thin-Film Transistors With an Ultrathin Channel
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Lin, Horng-Chih; Lin, Cheng-I; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:20:40Z |
Read Characteristics of Independent Double-Gate Poly-Si Nanowire SONOS Devices
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Lin, Horng-Chih; Lin, Zer-Ming; Chen, Wei-Chen; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:20:10Z |
Tri-gated Poly-Si Nanowire SONOS Devices
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Hsu, Hsing-Hui; Liu, Ta-Wei; Lin, Chuan-Ding; Chia Kuo-Jung; Huang, Tiao-Yuan; Lin, Horng-Chih |
| 國立交通大學 |
2014-12-08T15:16:49Z |
Improved NBTI in SiN-capped PMOSFETs with ultra-thin HfO2 buffer
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Lu, Ching-Sen; Lin, Horng-Chih; Chen, Ying-Hung; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:16:17Z |
Impacts of precursor flow rate and temperature of PECVD-SiN capping films on strained-channel NMOSFETs
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Lu, Ching-Sen; Lin, Horng-Chih; Lee, Yao-Jen; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:16:15Z |
Spatially resolving the degradation of SPC thin-film transistors under AC stress
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Chang, Kai-Hsiang; Lee, Ming-Hsien; Lin, Horng-Chih; Huang, Tiao-Yuan; Lee, Yao-Jen |
| 國立交通大學 |
2014-12-08T15:16:14Z |
A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects
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Chen, Bae-Horng; Wei, Jeng-Hua; Lo, Po-Yuan; Wang, Hung-Hsiang; Lai, Ming-Jinn; Tsai, Ming-Jinn; Chao, Tien Sheng; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:16:08Z |
Correlating drain-current with strain-induced mobility in nanoscale strained CMOSFETs
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Lin, Hong-Nien; Chen, Hung-Wei; Ko, Chih-Hsin; Ge, Chung-Hu; Lin, Horng-Chih; Huang, Tiao-Yuan; Lee, Wen-Chin |
| 國立交通大學 |
2014-12-08T15:16:00Z |
Prospect of cobalt-mix-tetraethoxysilane method on localized lateral growth of carbon nanotubes for both p- and n-type field effect transistors
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Chen, Bae-Horng; Lin, Horng-Chih; Huang, Tiao-Yuan; Wei, Jeng-Hua; Hwang, Chien-Liang; Lo, Po-Yuan; Tsai, Ming-Jinn; Chao, Tien Sheng |
| 國立交通大學 |
2014-12-08T15:15:40Z |
Fabrication and characterization of nanowire transistors with solid-phase crystallized poly-Si channels
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Lin, Horng-Chih; Lee, Ming-Hsien; Su, Chun-Jung; Shen, Shih-Wen |
| 國立交通大學 |
2014-12-08T15:15:29Z |
Characterizing the channel backscattering behavior in nanoscale strained complementary metal oxide semiconductor field-effect transistors
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Lin, Hono-Nien; Chen, Hung-Wei; Ko, Chih-Hsin; Ge, Chung-Hu; Lin, Horng-Chih; Huang, Tiao-Yuan; Lee, Wen-Chin |
| 國立交通大學 |
2014-12-08T15:14:39Z |
Spatially and temporally resolving the degradation of n-channel poly-Si thin-film transistors under hot-carrier stressing
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Lee, Ming-Hsien; Chang, Kai-Hsiang; Lin, Horng-Chih |
| 國立交通大學 |
2014-12-08T15:14:38Z |
Impacts of SiN-capping layer on the device characteristics and hot-carrier degradation of nMOSFETs
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Lu, Chia-Yu; Lin, Horng-Chih; Lee, Yao-Jen; Shie, Yu-Lin; Chao, Chih-Cheng |
| 國立交通大學 |
2014-12-08T15:14:31Z |
High-performance poly-Si nanowire NMOS transistors
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Lin, Horng-Chih; Su, Chun-Jung |
| 國立交通大學 |
2014-12-08T15:14:29Z |
Impacts of a polycrystalline-silicon buffer layer on the performance and reliability of strained n-channel metal-oxide-semiconductor field-effect transistors with SiN capping
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Lu, Ching-Sen; Lin, Horng-Chih; Huang, Jian-Ming; Lee, Yao-Jen |
顯示項目 176-200 / 232 (共10頁) << < 1 2 3 4 5 6 7 8 9 10 > >> 每頁顯示[10|25|50]項目
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