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"lin kc"的相关文件
显示项目 16-40 / 114 (共5页)
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| 國立交通大學 |
2014-12-08T15:46:23Z |
Measurement of electrically tunable liquid-crystal Fabry-Perot interferometer using a monochromatic light source
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Lin, KC; Lin, JS; Chen, PL; Chuang, WC |
| 國立交通大學 |
2014-12-08T15:44:41Z |
Characterization of additive systems for damascene Cu electroplating by the superfilling profile monitor
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Chiu, SY; Shieh, JM; Chang, SC; Lin, KC; Dai, BT |
| 國立交通大學 |
2014-12-08T15:43:54Z |
Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper
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Chang, SC; Shieh, JM; Lin, KC; Dai, BT; Wang, TC; Chen, CF; Feng, MS; Li, YH; Lu, CP |
| 國立交通大學 |
2014-12-08T15:42:33Z |
Effects of the relationship between resistivity and additive chemistries in electrochemically deposited copper films
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Chen, CF; Lin, KC |
| 國立交通大學 |
2014-12-08T15:42:28Z |
Electroplating copper in sub-100 nm gaps by additives with low consumption and diffusion ability
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Lin, KC; Shieh, JM; Chang, SC; Dai, BT; Chen, CF; Feng, MS |
| 國立交通大學 |
2014-12-08T15:42:27Z |
Effect of pulse frequency on leveling and resistivity of copper coatings
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Chen, CF; Lin, KC |
| 國立交通大學 |
2014-12-08T15:42:14Z |
Wetting effect on gap filling submicron damascene by an electrolyte free of levelers
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Chang, SC; Shieh, JM; Lin, KC; Dai, BT; Wang, TC; Chen, CF; Feng, MS; Li, YH; Lu, CP |
| 國立交通大學 |
2014-12-08T15:41:49Z |
Leveling effects of copper electrolytes with hybrid-mode additives
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Lin, KC; Shieh, JM; Chang, SC; Dai, BT; Chen, CF; Feng, MS; Li, YH |
| 國立交通大學 |
2014-12-08T15:40:08Z |
Electromigration studies of flip chip Sn95/Sb5 solder bumps on Cr/Cr-Cu/Cu under-bump metallization
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Shao, TL; Lin, KC; Chen, C |
| 國立交通大學 |
2014-12-08T15:39:40Z |
Effects of gamma radiation on optical fibre sensors
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Lin, KC; Lin, CJ; Lee, WY |
| 國立交通大學 |
2014-12-08T15:39:18Z |
Ballistic transport through coupled T-shaped quantum wires
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Lin, YK; Lin, KC; Chuu, DS |
| 國立交通大學 |
2014-12-08T15:36:20Z |
Improved field-emission properties of carbon nanotube field-emission arrays by controlled density growth,of carbon nanotubes
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Juan, CP; Chen, KJ; Tsai, CC; Lin, KC; Hong, WK; Hsieh, CY; Wang, WP; Lai, RL; Chen, KH; Chen, LC; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:27:51Z |
REACTIVE ION ETCH OF GAAS AND ALGAAS USING BCL3, SICL4 AND SF6, INSTEAD OF CCL2F2
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WU, JW; CHANG, CY; LIN, KC; CHANG, EY; HWANG, JH |
| 國立交通大學 |
2014-12-08T15:27:49Z |
THE RELIABILITY OF MULTILEVEL METALLIZATION ON INGAAS/GAAS LAYERS
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CHANG, EY; CHEN, JS; WU, JW; LIN, KC |
| 國立交通大學 |
2014-12-08T15:27:49Z |
THE SELECTIVITY OF REACTIVE ION ETCH OF GA0.51IN0.49P/GAAS
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WU, JW; CHAN, SH; LIN, KC; CHANG, CY; CHANG, EY |
| 國立交通大學 |
2014-12-08T15:27:07Z |
Optimization of short channel effect by arsenic P-Halo implant through polysilicon gate for 0.12uw P-MOSFET
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Chen, C; Chang, CY; Chou, JW; Huang, CT; Lin, KC; Cheng, YC; Lin, CY |
| 國立交通大學 |
2014-12-08T15:26:56Z |
Technology of electroplating copper with low-K material a-C : F for 0.15 mu m damascene interconnection
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Shieh, JM; Suen, SC; Lin, KC; Chang, SC; Dai, BT; Chen, CF; Feng, MS |
| 國立交通大學 |
2014-12-08T15:19:02Z |
Spin-flip transport through an interacting quantum dot
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Lin, KC; Chuu, DS |
| 國立交通大學 |
2014-12-08T15:16:28Z |
Dual-bandpass filters with serial configuration using LTCC technology
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Lin, KC; Chang, CF; Wu, MC; Chung, SJ |
| 國立交通大學 |
2014-12-08T15:04:36Z |
SEMIINSULATING IRON-DOPED INDIUM-PHOSPHIDE GROWN BY LOW-PRESSURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
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WU, CC; FENG, MS; LIN, KC; CHAN, SH; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:04:30Z |
CARBON INCORPORATION DURING GROWTH OF GAAS BY TEGA-ASH3 BASE LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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CHEN, HD; CHANG, CY; LIN, KC; CHAN, SH; FENG, MS; CHEN, PA; WU, CC; JUANG, FY |
| 國立交通大學 |
2014-12-08T15:04:29Z |
DOPING OF INGAP EPITAXIAL LAYERS GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
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WU, CC; LIN, KC; CHAN, SH; FENG, MS; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:04:26Z |
IN0.49GA0.51P/GAAS HETEROSTRUCTURES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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FENG, MS; LIN, KC; WU, CC; CHEN, HD; SHANG, YC |
| 國立交通大學 |
2014-12-08T15:04:17Z |
STUDY OF SCHOTTKY CONTACTS ON N-GA0.51IN0.49P BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
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CHANG, EY; LAI, YL; LIN, KC; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:04:15Z |
A PSEUDOMORPHIC GAINP/INP MESFET WITH IMPROVED DEVICE PERFORMANCE
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LIN, KC; HSIN, YM; CHANG, CY; CHANG, EY |
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