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Taiwan Academic Institutional Repository >
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"lin kc"
Showing items 36-45 of 114 (12 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:04:30Z |
CARBON INCORPORATION DURING GROWTH OF GAAS BY TEGA-ASH3 BASE LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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CHEN, HD; CHANG, CY; LIN, KC; CHAN, SH; FENG, MS; CHEN, PA; WU, CC; JUANG, FY |
| 國立交通大學 |
2014-12-08T15:04:29Z |
DOPING OF INGAP EPITAXIAL LAYERS GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
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WU, CC; LIN, KC; CHAN, SH; FENG, MS; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:04:26Z |
IN0.49GA0.51P/GAAS HETEROSTRUCTURES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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FENG, MS; LIN, KC; WU, CC; CHEN, HD; SHANG, YC |
| 國立交通大學 |
2014-12-08T15:04:17Z |
STUDY OF SCHOTTKY CONTACTS ON N-GA0.51IN0.49P BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
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CHANG, EY; LAI, YL; LIN, KC; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:04:15Z |
A PSEUDOMORPHIC GAINP/INP MESFET WITH IMPROVED DEVICE PERFORMANCE
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LIN, KC; HSIN, YM; CHANG, CY; CHANG, EY |
| 國立交通大學 |
2014-12-08T15:04:06Z |
LOW-TEMPERATURE LUMINESCENT PROPERTIES OF DEGENERATE P-TYPE GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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CHEN, HD; FENG, MS; CHEN, PA; LIN, KC; WU, CC |
| 國立交通大學 |
2014-12-08T15:04:04Z |
PHOTOLUMINESCENCE OF HEAVILY P-TYPE-DOPED GAAS - TEMPERATURE AND CONCENTRATION DEPENDENCES
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CHEN, HD; FENG, MS; CHEN, PA; LIN, KC; WU, JW |
| 國立交通大學 |
2014-12-08T15:03:58Z |
ANOMALOUS MOBILITY ENHANCEMENT IN HEAVILY CARBON-DOPED GAAS
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CHEN, HD; FENG, MS; LIN, KC; CHEN, PA; WU, CC; WU, JW |
| 國立交通大學 |
2014-12-08T15:03:56Z |
CATION SOURCE DEPENDENCE OF GA0.5IN0.5P GROWTH-RATE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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WU, JW; CHANG, CY; LIN, KC; CHAN, SH; CHEN, HD; CHEN, PA; CHANG, EY; KUO, MS |
| 國立交通大學 |
2014-12-08T15:03:52Z |
TIWN SCHOTTKY CONTACTS TO N-GA(0.51)IN(0.49)P
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LIN, KC; CHANG, EY; WANG, SP; LAI, YL; CHANG, CY |
Showing items 36-45 of 114 (12 Page(s) Totally)
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