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Institution Date Title Author
國立交通大學 2017-04-21T06:56:32Z The action of silicon doping in the first two to five barriers of eight periods In0.2Ga0.8N/GaN multiple quantum wells of blue LEDs Chen, Meng-Chu; Cheng, Yung-Chen; Huang, Chun-Yuan; Wang, Hsiang-Chen; Lin, Kuang-I; Yang, Zu-Po
國立成功大學 2016-09 The action of silicon doping in the first two to five barriers of eight periods In0.2Ga0.8N/GaN multiple quantum wells of blue LEDs Chen, Meng-Chu; Cheng, Yung-Chen; Huang, Chun-Yuan; Wang, Hsiang-Chen; Lin, Kuang-I; Yang, Zu-Po
國立成功大學 2016-03-21 Photoreflectance study of the near-band-edge transitions of chemical vapor deposition-grown mono- and few-layer MoS2 films Lin, Kuang-I; Chen, Yen-Jen; Wang, Bo-Yan; Cheng, Yung-Chen; Chen, Chang-Hsiao
國立成功大學 2015-03 Investigation of valence-band splitting in InN by low-temperature photoreflectance spectroscopy Lin, Kuang-I; Chen, Yen-Jen; Cheng, Yung-Chen; Gwo, Shangjr
國立成功大學 2013-12 Double-Band Anticrossing in GaAsSbN Induced by Nitrogen and Antimony Incorporation Lin, Kuang-I; Lin, Kuo-Lung; Wang, Bo-Wei; Lin, Hao-Hsiung; Hwang, Jenn-Shyong
國立成功大學 2010-11 Monoclinic phase transition in stress-induced BiFeO3 epitaxial films Huang,Yen-Chin; Lee, Hsin-Hua; Chen,Yi-Chun; Cheng, Ching; Lin, Kuang-I; Hwang, Jenn-Shyong; Liang, Wen-I; Chen, Hsiang-Jung; Chu,Ying-Hau
國立成功大學 2006-11-06 Band anticrossing in InGaPN alloys induced by N-related localized states Lin, Kuang-I; Huang, Wung-Hong
國立成功大學 2006-05 Studies of electro-optical properties and band alignment of InGaPN/GaAs heterostructures by photoreflectance and photoluminescence Lin, Kuang-I; Chen, K. C.; Wang, T. S.; Lu, Yan-Ten; Hwang, Jenn-Shyong
國立成功大學 2006-02-25 Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications Lin, Chun-Yu; Fang, Yean-Kuen; Ling, Shih-Fang; Lin, Ping-Chang; Lin, Chun-Sheng; Chou, Tse-Heng; Hwang, Jenn Shyong; Lin, Kuang I.
國立成功大學 2006-01-24 螢光光譜、光調制光譜及拉曼光譜研究氮磷化銦鎵/砷化鎵異質結構之光電特性 林光儀; Lin, Kuang-I

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